TRANSISTOR D 882 Search Results

philips 3595

Abstract: BLX69 BLX69A 60306 cm 3593
Contextual Info: 86D 0 1790 D T i N AMER P H I L I P S / D I S C R E T E ObE D • BLX69A bbSBTBl 0014028 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V, The transistor is resistance stabilized and is

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

Contextual Info: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is

DTC114TS

Contextual Info: V~P>V DTC114TU/DTC114TK/DTC114TS/DTC114TF DTC114TL/DTC114TA/DTC114TV / T ransistors D TC 114 T U /D T C 114 T K /D T C 114TS DTC114T F /D T C 114T L /D T C 114TA D TC 114TV h 7 > y ^ ^ ‘i "J •^■/Transistor Switch Digital Transistors Includes Resistors

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

BLW90

Abstract: 8-32UNC J188
Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> • bh53131 IAPX D O ET^C Jl BLW 90 U.H.F. P O W E R T R A N S IS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f, range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

SHI20

Abstract: ic ZN 415 yx 861 1g1b
Contextual Info: H D66300T- Horizontal Driver fo r TFT-Type LC D C olor TV The HD66300T is a horizontal d river used for TFTtype (Thin Film Transistor) LCD color TVs. Specifi­ cally, it drives the drain bus signals of a TFT-type LCD panel. The HD66300T receives as input three video signals R,

BLF177

Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244
Contextual Info: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw resistors trw rf semiconductors TRW MICROWAVE TRW2307 TRW CAP TRW2304 TRW 2003 transistor TRW
Contextual Info: DE I RF Devices Division ôfl55GE4 0D035fl7 1 TRW Electronic Components Group 8825024 T R W ELEK CMPNT, R F 89D 03587 D TRW2307 Microwave Power Transistor • * • • • C o m m o n B a se G o ld M etalized H erm etic 1 to 3 G H z “T X ” Screenabie

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA803T NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS M INI MOLD ¿¡PA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES •

613 GB 123 CT

Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT

Contextual Info: SPD 13N05L Infineon technologies w » p f°v e d SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancem ent mode Drain-Source on-state resistance ^DSion Continuous drain current b • Avalanche rated 55 V 0.064

LB121A

Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
Contextual Info: s * hu tt s o m n iB J U f tic « » * a * B D » o r b d s t » In addition to our own products, we supply the following products in JAPAN. TRANSISTOR, LINEAR 1C ' J M S S M A L L NPN N U M B ER PN P or IVD— SIGNAL TRANSISTORS MAXIMUM R ATIN G S HSM C

Contextual Info: H D66300T- Horizontal Driver for TFT-Type LC D Color TV The HD66300T is a horizontal driver used for TFTtype (Thin Film Transistor) LCD color TVs. Specifi­ cally, it drives the drain bus signals of a TFT-type LCD panel. Features The HD66300T receives as input three video_signals R,

RC723DP

Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Contextual Info: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525

BUZ 323

Contextual Info: SIEMENS BUZ 323 SIPMOS Power Transistor • N channel • Enhancement mode V'ObSB 1 • Avalanche-rated i Pin 1 Pin 2 G Type BUZ 323 Vbs 400 V b 15 A Pin 3 D S fbsion Package Ordering Code 0.3 n TO-218AA C67078-S3127-A2 Maximum Ratings Parameter Symbol

SG3821N

Abstract: sg3821 SG3821J SG3046N sg3045j SG3046
Contextual Info: SG3821/SG3045/SG3046 SILICON GENERAL LINEAR INTEG RATED CIRCUITS MATCHED N PN TRANSISTOR ARRAYS D E S C R IP T IO N FE A T U R E S These five matched transistors are general purpose NPN transistors configured with two internally connected to form a differential amplifier, each with its own associated source

complement 2sd882

Abstract: 2SB772 2sd882 2SD882S
Contextual Info: id 2SD882/2SD882S N PN E pitaxial Silicon Transistor Semiconductor A U D IO F R E Q U E N C Y P O W E R A M P L IF IE R LOW S P E E D S W IT C H IN G • C om plém ent to 2SB772 ABSOLUTE MAXIMUM RATINGS tT a = 25 T > C h a r a c te r is tic C ollector-Base Voltage

Contextual Info: SIEMENS BUZ 323 SIPMOS Power Transistor ^ • N channel o • Enhancement mode V > ! G 5 t- 6 • Avalanche-rated 2 'á 3 Pin 1 Pin 2 Type BUZ 323 b 15 A Vbs 400 V Pin 3 D G S ^DS on Package Ordering Code 0.3 a TO-218AA C67078-S3127-A2 Maximum Ratings

Contextual Info: SIEMENS SIPMOS Power MOS Transistor Vas lD ^ D S o n BUZ 70 = 60 V =12 A = 0.15 Q • N channel • E nhancem ent m ode • A valan che-p roo f • Package: T O -2 2 0 A B ’ ) Type Ordering code BUZ 70 C 6 70 78-S 1 33 4-A 2 Maximum Ratings Symbol Values

2SB1335A

Abstract: 2SD1855A transistor D 882 p
Contextual Info: 2SD1855A /Transistors 2SD 1855A H M ÍÉ t& 7 0U P N v V = ¡ > Triple Diffused Planar NPN Silicon Transistor Freq. Power Amp. • M 3 * - : ^ N Ü E I/D im ensio ns Unit : mm 1) V c E (s a t)* > 'm 'o V c E ( s a t) = 0 .4 V ( T y p .) fi.o * “ ; (lc /lB = 3 A /0 .3 A )