TRANSISTOR D 331 Search Results

to92 transistor pinout

Abstract: MAX-7Q BST72A
Contextual Info: Philips Semiconductors Product specification N-channel vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and for application with relay, high-speed

2U37

Abstract: BU2520af BY228 TRANSISTOR BO 345
Contextual Info: N AMER PHILIPS/DISCRETE b^E D Bi t,bS3*331 DDEöBbR 5*14 « A P X Philips Semiconductors _ ProductSpec Silicon Diffused Power Transistor BU2520AF G E N E R A L D ESC RIPTIO N New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in

HF 331 transistor

Contextual Info: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

2N6660

Abstract: 2N6659 2N6661 TP 1322 2N6661 transistor
Contextual Info: 2N 6659 2N 6660 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed fo r application as low-power, high-frequency inverters and line drivers. Features: • Direct interface to C-MOS, T T L , etc.

RX1011B250Y

Contextual Info: DEVELOPMENT ObE data D b b S3 T3 1 N AME R 0015175 PH ILIPS/D ISCRETE nr- PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C broadband pulse power amplifiers operating in the 1.03 to 1.09 GHz frequence range.

Contextual Info: 2N6659 2N6660 _ / V _ 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and line drivers.

BUK457-450B

Abstract: T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E S5E m D bia53T31 00E05S0 3 • PowerMOS transistor BUK457-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

RX1214B300Y

Contextual Info: N AMER PH ILIP S/D ISCRETE ObE D ^53131 GOlSlô'ï □ • RX1214B300Y t r ^ 3 3 - / r PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor fo r use in common-base, class-C wideband amplifiers operating under pulsed conditions. It is recommended for L-band radar applications.

transistor smd zG

Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG
Contextual Info: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

GHz PNP transistor

Abstract: BFQ253 mb8833 Philips MBB BFQ233 BFQ233A BFQ253A
Contextual Info: Philips Semiconductors — 33 PNP 1 GHz video transistor PHILIPS INTERNATIONAL D E S C R IP T IO N Product specification - / ^ ' BFQ253; BFQ253A 5bE 7110flEb D[]i45b2S Ö3M IPHIN P IN N IN G P N P silicon epitaxial transistor in a S O T 5 T O -3 9 envelope with

Transistor D 799

Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR
Contextual Info: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G | MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.

Contextual Info: N AUER PHI LIP S/DISCRETE 2SE D btaS3T31 00E05S0 3 BUK457-450B PowerMOS transistor G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistor sc 238

Abstract: T-33-H transistor motorola 236 transistor sc 236 B023S BD234 BD236 BD238
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 F> "Tb MOTOROLA SC b 3ti7SS4 0000575 96D 8 0 5 7 5 XSTRS/_R.F D BD234 BD236 BD238 MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR PNP SILICON . . . d esigned for use in 5 to 1 0 W att audio amplifiers and drivers

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BUK454-800A

Abstract: BUK454-800B T0220AB
Contextual Info: N AUER PHILIPS/DISCRETE fc^E D • bb53T31 D030b35 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

T2721

Abstract: BFX29 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1
Contextual Info: BFX29 T - Z.7 - Z J PHILIPS INTERNATIONAL SbE D • 711005b 0GM2EGb 5Ô7 ■ P H I N SILICON PLANAR EPITAXIAL TRANSISTOR £ PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

transistor 2TH

Contextual Info: N AMER PHILIPS/DISCRETE t^E D • 1^53=131 0027726 706 BFX29 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter Collector-em itter voltage (open base)

BFX29

Abstract: DF 331 TRANSISTOR bfx29 transistor Silicon Epitaxial Planar Transistor philips Transistor 5331 BFX2
Contextual Info: N AMER PHILIPS/DISCRETE m bbSB^l 0G2772Ô 70Û b^E D BFX29 A SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A - v CB0 max. Collector-emitter voltage open base

Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP631,632 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The T O S H I B A TLP631 and T L P632 consist of a p h o t o-transistor o p t i c a l l y coupled to a g a l l i u m arse n i d e infrared emitting d i o d e in

100-P

Abstract: BUK454-800A BUK454-800B T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSt. 00b4D71 13fl M P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER PHI L I P S / D I S CR E T E bbSBTBl 0015531 h □ hE D RZ2731B45W r-s s - 3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.