TRANSISTOR C203 Search Results

BTNA14N3

Contextual Info: CYStech Electronics Corp. Spec. No. : C214N3-H Issued Date : 2002.05.11 Revised Date : 2002.12.23 Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA14N3 Description • The BTNA14N3 is a darlington amplifier transistor • Complementary to BTPA64N3.

BTA1036S3

Abstract: BTC2411S3
Contextual Info: CYStech Electronics Corp. Spec. No. : C203S3-R Issued Date : 2003.11.18 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC2411S3 Description • The BTC2411S3 is designed for general purpose amplifier applications. It is housed in the

IC380

Abstract: BTC2411L3
Contextual Info: Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2411L3 Description • The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching

BTA1036N3

Abstract: BTC2411N3
Contextual Info: CYStech Electronics Corp. Spec. No. : C203N3 Issued Date : 2002.05.11 Revised Date : 2005.03.09 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC2411N3 Description • The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching

IC380

Abstract: BTA1036N3 BTC2411N3 C203N BTA1036
Contextual Info: CYStech Electronics Corp. Spec. No. : C203N3 Issued Date : 2002.05.11 Revised Date : 2005.12.20 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC2411N3 Description • The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching

TRANSISTOR 2N 4401

Abstract: 2N4401A3 2N4403A3 4401b
Contextual Info: Spec. No. : C203A3 Issued Date : 2003.06.06 Revised Date : 2005.03.09 Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor 2N4401A3 Description • The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching

BTN4401N3

Abstract: BTP4403N3 IC DATE CODE
Contextual Info: Spec. No. : C203N3-H Issued Date : 2003.06.06 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN4401N3 Description • The BTN4401N3 is designed for using in driver stage of AF amplifier and general purpose switching

2N44

Abstract: 2N4401A3 4401b C203A 2N440 TRANSISTOR 2N 4401 2N4403A3 2N4401B 4 npn transistor ic 2n 4401
Contextual Info: Spec. No. : C203A3 Issued Date : 2003.06.06 Revised Date : 2005.10.25 Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor 2N4401A3 Description • The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching

BTA1577S3

Abstract: BTC4097S3
Contextual Info: CYStech Electronics Corp. Spec. No. : C203S3 Issued Date : 2002.05.11 Revised Date : 2002.11.01 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC4097S3 Description • The BTC4097S3 is designed for use in driver stage of AF amplifier and general purpose

transistor c2030

Abstract: C2030 PT100M NPN transistor ECB TO-92 transistor c316 date for ic component C316 NPN transistor ECB TO-92 500ma 1A
Contextual Info: CYStech Electronics Corp. Spec. No. : C316 Issued Date : 2005.12.21 Revised Date : 2006.04.03 Page No. : 1/9 General Purpose NPN Epitaxial Planar Transistor BTC2030A3 Features • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability

TL113

Abstract: tl201 TL217 w3 smd transistor transistor c111
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200

capacitor marking c106

Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

c102 TRANSISTOR

Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

TL139

Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz

VdS 2093 2009

Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz

C801

Abstract: 1/db3 c801
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS

TL272

Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
Contextual Info: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty

c102 TRANSISTOR

Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

TRANSISTOR C802

Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

Contextual Info: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

TL225

Abstract: ATC100A6R2CW150X
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

c102 TRANSISTOR

Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

transistor c735

Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency