c1028 transistor
Abstract: c1028
Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor
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c1028c1028-4-9865x65c1028 transistor |
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c1028
Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor
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C1028
Abstract: c1028 transistor
Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor
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c102865x65c1028 transistor |
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C1029
Contextual Info: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage
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c1029c1029-4-9865x65 |
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C1029
Contextual Info: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage
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c102965x65 |
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C1029
Contextual Info: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage
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transistor c1026
Abstract: C1026 c1026 transistor C1026 NPN Transistor transistor c1026 equivalent
Contextual Info: ISO 9001 Registered Process C1026 BiCMOS 1.0µm Schottky Diode and Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Minimum Typical 0.50
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c1026100x3c1026-4-9865x65+4transistor c1026c1026 transistorc1026 npn transistortransistor c1026 equivalent
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transistor c1026
Abstract: C1026 C1026 NPN Transistor equivalent transistor C1026 transistor c1026 equivalent c1026 transistor
Contextual Info: ISO 9001 Registered Process C1026 BiCMOS 1.0µm Schottky Diode and Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Minimum Typical 0.50
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c1026100x365x65transistor c1026+4c1026 npn transistorequivalent transistor c1026transistor c1026 equivalentc1026 transistor
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transistor c1026
Abstract: C1026 NPN Transistor C1026 c1026 transistor transistor c1026 equivalent transistor c1026 data
Contextual Info: ISO 9001 Registered Process C1026 BiCMOS 1.0µm Schottky Diode and Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Minimum Typical 0.50
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c1026100x365x65transistor c1026+4c1026 npn transistorc1026 transistortransistor c1026 equivalenttransistor c1026 data
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Contextual Info: M E C L II M C 1000/1200 series D U A L 4 -5 IN P U T EXPANDERS MC1025 MCI 225 D ual expander arrays, with a 4-transistor array isolated from a 5transistor array. T he collectors and emitters from both arrays m ay be connected to form a 9-transistor array. W ith each base available, a 4,
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mc102520-input40-input1024/mc+2c102s/mc1225
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c1027 transistor
Abstract: transistor c1027 C1027 transistor equivalent c1027 transistor c1027 equivalent C-1027
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted
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c1027100x1100x10065x65+5c1027 transistortransistor c1027transistor equivalent c1027transistor c1027 equivalentc-1027
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c1027 transistor
Abstract: transistor c1027 C1027 C-1027 transistor npn c1027 transistor equivalent c1027 transistor c1027 equivalent
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted
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c1027100x1100x10065x65+6c1027 transistortransistor c1027c-1027transistor npn c1027transistor equivalent c1027transistor c1027 equivalent
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transistor c1027
Abstract: C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted
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c1027100x1100x100c1027-4-98+865x65transistor c1027c1027 transistortransistor equivalent c1027c-1027transistor c1027 equivalenttransistor npn c1027transistor c1027 equivalents
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2g1012g1022g1032g109+152g2202g2212g2222g2232g2242n1892n1136b2n420b1151 equivalent2sa114oc592t3122t203sft1252n1152
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C-107
Abstract: C-108 IRGBC30FD2 c103 a ge
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes
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irgbc30fd210khzo-220abc-108+2c-107c103 a ge
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capacitor marking c106
Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200
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ptfa220081mcapacitor marking c106nfm18ps105tl217+6nfm18ps105r0j3tl222transistor tl217transistor smd w2c105 transistorc103 transistor data
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c102 TRANSISTOR
Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200
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ptfa220081mpg-son-10c102 transistorc103 transistor+8c106 transistortransistor c105transistor c104c103 m transistorp 4712nfm18ps105r0j3c105 transistortl113
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c103 a ge
Abstract: C-107 C-108 IRGBC30FD2
Contextual Info: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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irgbc30fd210khzo-220abc-108+2c103 a gec-107
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TL139
Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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ptfb183404f340-watth-37275-6/2tl139+9ptfb183404ptfb183404eftl148transistor tl131tl162tl170tl172c105 transistortl145
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TRANSISTOR C802
Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS
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ptfa220121m12-wattpg-son-10transistor c802+5lm7805 c smdv4 markingp 4712transistor c803atc100a200jw
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Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz
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VdS 2093 2009
Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz
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ptfb213004f300-watth-37275-6/2vds 2093 2009+8tl2014transistor c114 chiptransistor c114 diagramtl243tl145tl1571tl1621transistor c114
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C-107
Abstract: C-108 IRGBC30FD2 transistor c107 m IRGBC30 c103 a ge
Contextual Info: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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irgbc30fd210khzo-220abc-108+4c-107transistor c107 mirgbc30c103 a ge
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C801
Abstract: 1/db3 c801
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS
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ptfa220121m12-wattpg-son-10c801+11/db3 c801
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