TRANSISTOR BUT 12 Search Results

Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse)

Contextual Info: How To Handle Transistors Although SAN YO makes all possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the

Contextual Info: How To Handle Transistors Although SANYO makes ail possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the conditions under which the transistors are used. These

Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal DESCRIPTION X3A-BFR520 MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied as whole wafer, fully tested but unsawn.

Contextual Info: Philips Semiconductors Product specification PNP 5 GHz wideband transistor crystal DESCRIPTION X3A-BFT93 MECHANICAL DATA PNP crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole wafer, fully tested but unsawn. Top metallization

Contextual Info: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50 MHz to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can

J119 transistor

Abstract: bipolar transistor ghz s-parameter 140C SGA-8543Z SiGe POWER TRANSISTOR
Contextual Info: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be

TRANSISTOR BC 157

Abstract: TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

Contextual Info: BUX85 NPN SILICON POWER TRANSISTOR ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C This series is currently available, but not recommended for new designs. TO-220 PACKAGE

a83z

Abstract: A83Z data SGA8343Z transistor A83 2.4 ghz passive rfid AN-044 bipolar transistor ghz s-parameter SGA-8343 SGA-8343Z SGA 8343Z
Contextual Info: SGA-8343 SGA-8343Z Product Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

Contextual Info: 7 ^ 2. 3 ' / 5 " “ SEMELAB 37E LTD D • Û1331Û7 000017b SEMELAB JU L 0 6 1988 BUT 70 NPN MULTI-EPITAXIAL POWER TRANSISTOR MECHANICAL DATA Suitable for high efficiency switching applications Dimensions in mm FEATURES • VERY LOW VC6 SAT1 • HIGH CURRENT

ac Inverter schematics 10 kw

Abstract: INVERTER 50 kW 25 KW inverter ACPL-P454-000E ac Inverter 10 kw ACPL-P454 dc to ac inverter schematic diagram kw POWER SUPPLY transformer 100 kW ACPL-W454
Contextual Info: ACPL-W454/P454 High CMR High Speed Optocoupler Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features The ACPL-W454/P454 is similar to Avago Technologies other high speed transistor output optocouplers, but with

SM200

Abstract: Radar HV400 Radar Transponder HVV1011-300 HVV1214-100
Contextual Info: The innovative Semiconductor Company! Technology Overview TM A NEW APPROACH TO SILICON RF POWER TRANSISTOR DESIGN Today’s radar and avionics applications demand RF power amplifiers that can deliver higher power density in smaller packages and with greater reliability. But, the silicon technologies currently used in most power transistors

transistor BC 245

Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time

KVS5032

Abstract: ic iR light control
Contextual Info: Visible Light Sensor KVS5032 DIMENSIONS The KVS5032 is the optical sensor with high sensitivity of the visible light. It is a photo transistor with IR filter inside. Unit : mm 1.30 2 2.40 3.00 1.50 3 1 4 3.50 FEATURES TOP SURFACE • High sensitivity in a visible area, but little sensitivity

BUT93

Abstract: BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11
Contextual Info: A E G CORP 17E D 002=142^ G QCHSBI fi BUT 93 •BHILIIFmiMKiliia electronic Creative Technologies r-2 3 -il Silicon NPN Power Transistor A p p lic a tio n : Switching mode power supply, electronic ballast Features: • In m ulti diffusion technique • Short sw itching tim e

8543

Abstract: 2.4 ghz passive rfid Z1 SOT343 EDS-102583
Contextual Info: Advanced Information Product Description Sirenza Microdevices’ SGA-8543 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides low

rohm surface mounted transistor series

Abstract: Z1 SOT343 GAS105
Contextual Info: AdvancedPreliminary Information Product Description Sirenza Microdevices’ SGA-8143 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8143 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides high

Contextual Info: BUX84 NPN SILICON POWER TRANSISTOR 40 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 2 A Continuous Collector Current 3 A Peak Collector Current B 1 Typical tf = 200 ns at 25°C C 2 E 3 This series is currently available, but not recommended for new designs.

AEG T 25 N 1000

Abstract: ps2ms QS 100 NPN Transistor S100 NPN Transistor BYV16 MS 3894 N BUT54
Contextual Info: A E G CORP 17E D QQSTMSta OGQTSSl Q BUT 54 electronic r - 33-13 C^atN«Tech«j*os'es Silicon NPN Power Transistor A p p lic a tio n : Sw itching mode power supply, electronic ballast Features: • In multi diffusion technique Short sw itching tim e • Glass passivation

2N914

Abstract: bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030
Contextual Info: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AN D V H F AM P LIFIE R The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is p rim a rily a universal switch but it is also an excellent high speed, high gain logic and

Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 5 A Continuous Collector Current This series is currently available, but not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

Contextual Info: 37E D SEMELAB LTD • Ô1331Ô7 00DD1Ö0 Ô M S t lL B SEMELAB JUL 0 6 1988 ^ BUT 92A NPN FAST SW ITCHING POWER TRANSISTOR M EC H A N IC A L DATA Suitable for high efficiency switching applications Dimensions in mm FEATURES H-1-6 • VERY LOW V,CE SAT • HIGH EFFICIENCY SWITCHING