TRANSISTOR BO 341 Search Results

MPSA63

Abstract: Transistor MPSA63
Contextual Info: MPSA63 PNP SILICON DARLINGTON TRANSISTOR TO-92 MPSA63 is PNP silicon darlington transistor designed for preamplifier input applications. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VCES 30V Collector-Base Voltage VCBO 30V Emitter-Base Voltage VE BO

BF397

Contextual Info: m «§i| JÉI BF397 PNP SILICON TRANSISTOR TO-92F BF397 is PNP silicon transistor designed for •À high voltage applications. CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 90 V Collector-Emitter Voltage VCEO 90V Emitter-Base Voltage VE BO 6V Total Power Dissipation

transistor Bc 540

Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

TRANSISTOR BO 344

Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

ebc 300

Abstract: MPS A92 transistor MPS-A92
Contextual Info: PNP SILICON HIGH VOLTAGE TRANSISTOR TO-92A MPS-A92 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage

2SC2603

Abstract: 2SC2603 F 2SC2603 G 2SC2603 E sv micro 200EA
Contextual Info: 2SC2603 SILICON TRANSISTOR TO-92B 2SC2603 is NPN silicen planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

Transistor 5331

Abstract: BSV16 BSV17 BSV17-10 bsv16-16 BSV16-10 BSV15 BSV15-10 Silicon Epitaxial Planar Transistor philips
Contextual Info: I I N AMER PHIL I P S / D I S C R E T E t.'ÎE J> 002707b 341 I IAPX BSV15 to 17 ^ 5 3 ^ 3 1 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.

WF VQE 22 c

Abstract: CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE
Contextual Info: G E SOLID STATE Dl D E | 3fl75Clfll G014b3fc> 1 | A rra y s ' CA3118, CA3146, CA3183 T 'H ^ ZS High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ Vgg matched + 5mV max. ■ Operation from DC to 120 MHz CA3118AT, T; CA3146AE, E

BY22B

Abstract: BU2508A
Contextual Info: AMER PHILIPS/DISCRETE b^E T> bb53^31 □ □2fl33ti as? M A R X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope

Contextual Info: BC 200 MINIATURE P N P A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR I M E C H A N IC A L O U T L IN E G E N E R A L D ESC R IP T IO N M T -4 2 The BC 200 is a PNP silicon planar epitaxial transistor in miniature plastic package designed for hearing aids, watches, paging systems and other equipment

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

TRANSISTOR BO 344

Abstract: TRANSISTOR BO 341
Contextual Info: S G S -T H O M S O N M e iM a ie « B U L48 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSWITCHING TRANSISTOR . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS . MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS

2SC2603

Abstract: 2SC2603 E 2SC2603 F
Contextual Info: TO-92B 2SC2603 is NPN silicon planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction & Storage Temperature

Contextual Info: BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR 1 M ECHANICAL O U TLIN E G E N E R A L D ESC R IPT IO N M The BC 146 is a NPIMsil icon planar epitaxial transistor in miniature plastic package designed for hearing aids, watches, paging systems and other equipment

transistor Bc 580

Abstract: TRANSISTOR BC 650 c transistor bc 146 transistor bc 33 BC200 ic for hearing aid Package MT-42 200G BOX49477 bc200r
Contextual Info: BC 200 MINIATURE PNP AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR i M EC H A N IC A L O U T L IN E G E N E R A L D ESCR IPTIO N M T -4 2 The BC 200 is a PNP silicon planar epitaxial transistor in miniature plastic package designed for hearing aids, watches, paging systems and other equipment

2N3417

Abstract: transistor BO 540 NPN transistor ECB TO-92
Contextual Info: 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

200G

Abstract: BOXJ8477 bc200r
Contextual Info: 200 MINIATURE P N P AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR M E C H A N IC A L O U T LIN E GENERAL DESCRIPTION MT-42 COLOR DOT 1.8max The BC 200 is a PNP silicon planar epitaxial transistor in miniature plastic package designed for hearing aids, watches, paging systems and other equipment

PN3568

Contextual Info: PN3568 NPN SILICON TRANSISTOR PN3568 is NPN silicon planar epitaxial transistor designed for amplifier and switching applications for collector current up to 500mA. TO-92 I ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage vCE0 Emitter-Base Voltage

TRANSISTOR BO 346

Abstract: transistor bd 346 TRANSISTOR BO 341 OCS30 TRANSISTOR BO 345
Contextual Info: O K I electronic com ponents QCS30 Optical PNPN Switches GENERAL DESCRIPTION T he OCS3C is an optical sw itch form ed b y co m bining a G aA s in frared light em ittin g d io d e a n d a silicon P N P N elem ent th at can w ith sta n d high voltages. T he device is encased in an 8-pin plastic

Contextual Info: MPS-A92 PNP SILICON HIGH VOLTAGE TRANSISTOR TO-92A MPS-A92 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage

2SA561

Abstract: hx 36 transistor 2SA561
Contextual Info: UKW 2SA5Ö1 FNP SILICON TRANSISTOR TO-92B 2SA561 is PNP silicon., planar transistor designed for low power general purpose amplifiers. ABSOLUTE M A X IMUM RATINGS ECB Collector-Base Voltage Coliector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

BF173 Transistor

Abstract: BF173
Contextual Info: BF 173 IV! I C R a NPN SILICON PLANAR EPITAXIAL TRANSISTOR ΠL_ΠC T"F* o r s i I C S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS

2SD1834

Contextual Info: h ~7 > V $ /'Tran sistors 2SD1834 2SD1834 7 -J B N P N # - u > h > m m Epitaxial Planar NPN Silicon Transistor (Darlington) tfS^JiSfiffl/M edium Power Amp. • fl-ff^ fiill/D im e n s io n s (U n it: mm) 1) # - ' J > h > i g ^ ? a h FETi.-5o hFE = 15000 (Typ.)