200G Search Results

SWT-S1HM-2245

Contextual Info: 1 2 3 4 5 6 7 8 9 A A SPECIFICATIONS Contact Resistance: Insulation Resistance: Withstanding: Operating Force: Durability: Operating Temp: Processing Temp: B 70mΩ max 100MΩ min AC 500V for 1 minute 200gf± 150gf 10,000 Cycles Min -10˚C to +60˚C 265˚C for 3 seconds

Contextual Info: SKM 200GB176D.   .& /      % Absolute Maximum Ratings Symbol Conditions IGBT  0  .& / # 0  2& / 2')  .!) $   3) / 23) $ 6) $ 8 .)  2) <   .& / .2) $   3) / 2>) $ 6) $ 0  2&) / 22) $   .& / .2) $

emachines

Contextual Info: n m z B rtt3 TOCOS LONG-LIFE TYPE Unit : mm [20^ A °^ J b 7 0 > L IF E ^i^ë o œ C Y C L E S TYPE R VQ 20N FEATURES w -u m , > S ls h J l ' - Ï Z -í y ’ (5 0 — 200gf • cm) f c t W n T f f ë T 'T □ » 2 0 0 ^ 1 ( ^ ( 0 1 ! ^ & nJÉ féT'T (ÏÏ0 £ : R V Q 20 N 2 )0

Contextual Info: SKM 200GB063D Absolute Maximum Ratings Symbol Conditions IGBT ' ) )<= (' 0@  ( SEMITRANSTM 3 Superfast NPT-IGBT Modules SKM 200GB063D Features                                

Contextual Info: SKM 200GB128D Absolute Maximum Ratings Symbol Conditions IGBT  % %56 7  9" 1 3   SEMITRANSTM 3 SPT IGBT Module SKM 200GB128D Features                                !" 

PD200GB40

Abstract: PD200GB80 PE200GB40 PE200GB80 PK200GB40 PK200GB80 200GB
Contextual Info: THYRISTOR MODULE PK PD,PE 200GB UL;E76102 （M） Power Thyristor/Diode Module 200GB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 800V are available.

Contextual Info: , I I File No. I 027 I I SHEET 1/1 c SPEICFICATIONS • Current Rating: 1 Amp Insulator Resistance: 5000 Megohms Min. Dielectric Withstanding: AC 500V Operating Temperature: — 40‘C ~ +105’C Max. Processing Temp.: 230‘C For 30 Seconds Retention Force: 200g Min. Per Pin

Contextual Info: , I I File No. I 027 I I SHEET 1/1 c SPEICFICATIONS 1.00 Current Rating: 1 Amp Insulator Resistance: 5000 Megohms Min. Dielectric Withstanding: AC 500V Operating Temperature: — 40‘C ~ +105’C Max. Processing Temp.: 230‘C For 30 Seconds Retention Force: 200g Min. Per Pin

MDM15

Abstract: MDM-15 wdm Multiplexer
Contextual Info: OPTICAL COMPONENTS Welcome to OPTOPIA New Product 200GHz 4 CHANNEL MUX/DEMUX MODULE MDM-15 Typical Performance Parameter Optical Filters Applications Wavelength Mux / Demux Optical Add Drop Multiplexer OADM Access / Ring network system Dimensions 84 In 2ch

skim200gd128d

Contextual Info: SKiM 200GD128D Absolute Maximum Ratings Symbol Conditions IGBT 1 2 ( (8 12 ; !"    . */ !64" 0(  . */ !64" 0(  . 3  ?>        1 SKIM 4  . */ 0(       $ Values Units 3*44 374 !3,/" ,94 !*64" : *4

Contextual Info: SKM 200GB174D Absolute Maximum Ratings Symbol Conditions IGBT 2 7 ) ):; 27  =  2 SEMITRANSTM 3 Low Loss IGBT Modules SKM 200GB174D Features                         !   "    # $ 

200GB06

Contextual Info: SKM 200GB063D Absolute Maximum Ratings Symbol Conditions IGBT ' ) )<= (' 0@  ( SEMITRANSTM 3 Superfast NPT-IGBT Modules SKM 200GB063D Features                                

200GB124D

Abstract: SKM200GB124D
Contextual Info: SKM 200GB124D Absolute Maximum Ratings Symbol Conditions IGBT 7-8 -< 7!8 ?   7 SEMITRANSTM 3 Low Loss IGBT Modules SKM 200GB124D + 4 02 D  BD ? 4 052 6- Characteristics Symbol Conditions IGBT 7-8        Typical Applications  $       

Rotary

Abstract: Rotary Switches
Contextual Info: Rotary Switches 7x7 mm Rotary DIP Switch with central C-pin RD18 Series H = 3.0mm RD18T3_10RHTB RD18T3_16RHTB P.C.B. LAYOUT RD18T3H_RHTB H = 3.0mm RD18S3_10RH_ RD18S3_16RH_ RD18S3H_RH_ P.C.B. LAYOUT SPECIFICATIONS: > Operating Force: 200gf-cm Max. > Operating temperature range: -40°C to +85°C

dense wavelength division multiplexer

Contextual Info: 200 GHz 16 Channel Dense Wavelength Division Multiplexer Nanovation’s 200GHz Dense Wavelength Division Multiplexer products are designed for use in DWDM transmission systems and CATV networks to multiplex or demultiplex multiple wavelength channels. These modules are made with reliable dielectric thin-film technology and offer low insertion loss, superior wavelength stability, high channel isolation, epoxy-free optical paths and completely

Contextual Info: SKM 200GB126D . Absolute Maximum Ratings Symbol Conditions IGBT  % %23 5 7"     SEMITRANSTM 3 Trench IGBT Modules SKM 200GB126D Preliminary Data Features                          

Contextual Info: SKM 200GB176D Absolute Maximum Ratings Symbol Conditions IGBT  # #34 6 8 +   SEMITRANSTM 3 Trench IGBT Modules SKM 200GB176D Preliminary Data Features                           

Contextual Info: SKM 200GB176D Absolute Maximum Ratings Symbol Conditions IGBT  # #34 6 8 +   SEMITRANSTM 3 Trench IGBT Modules SKM 200GB176D   .& +2 - /   .& +2)- /   0  9*3$#9: ;   Features                       

Contextual Info: PFL100A34 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.550f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage6.0 Q Factor Min. f(co) Min. (Hz) Cut-off freq.200G P(D) Max. (W) Semiconductor MaterialGaAs Package StylePill-C

Contextual Info: 200G4 CONNECTOR SYSTEM .157” 4.0mm .315”(8.0mm) .472”(12mm) wire-to-board type WIRE RANGE PART NO. 200G4-TP MATERIAL/ THICKNESS INSULATION REEL AWG# mm2 FINISH mm O.D.(mm) PCS 22-28 0.3-0.08 PHOS/TIN 0.20 2.4-1.6 5000 200G4-H SERIES HOUSING MATERIAL : NYLON 66 UL 94V-0

Contextual Info: LTL SERIES Pb Long Travel SMT Type Tactile Switch LEAD FREE RoHS Compliant HOW TO ORDER L T L 6 1 3 V T/R Package: T/R=Tape & Reel RoHS & Lead Free Solderable Operating Force: R=200gf S=350gf Long Travel Tact Switch Travel:1.3mm With L S.M.T. Terminals 6x6mm

SENSYM

Abstract: SENSYM 150 SXL050G Accelerometers QQG130S SXL010G SXL010GFS SXL020G SXL020GFS SXL200G
Contextual Info: FASCO IND/SENSYM INC SënSvm 22E D • 3 4TT73? □□□l>3âl 3 ■ T -4 5 -/5 SXL SERIES SXL010G, SXL020G, SXL050G, 200G ±10g, ±20g, ±50g, ±200g General Purpose Accelerometers :|l ip *< Us SXL SFRIES FEATURES ■ 10g, 20g, 50g and 200g Ranges

200GAL173D

Contextual Info: SKM 200GB173D . 7 13 8*     # Absolute Maximum Ratings Symbol Conditions IGBT Values .: 7 13 8* *9 &* /422 .: 7 /32 8* &*= . 7 13 8* 112 + . 7 <2 8* /32 + 022 + &*=71%&*  ? 12 >9  SEMITRANS 3 Units /2 C . 7 13 8*

Contextual Info: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70