Transistor 2SB1203
Abstract: 2SB1203 1000P
Contextual Info: SPICE PARAMETER 2SB1203 LARGE-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter IS 1.000p BF 258.0 NF 999.0m 50.00 VAF IKF 1.685 ISE 352.0f NE 2.300 30.00 BR NR 1.00 VAR 15.00 IKR 330.9m Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value
|
Original
|
2sb120327degtransistor 2sb12031000p |
PDF
|
bo 615
Abstract: ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126
Contextual Info: T O 92 F 139 B CB 97 (CB 76) Silicon N PN transistor», video high voilage Transistors N P N silicium, haute tension vidéo Case Type B oitie r ptot (W) 2N 5 5 50 T O 92o 2N 5551 T O 92o BF 179C T O 39 0,6 B F 257 T O 39 51 B F 258 T O 39 * B F 259 8 F 297
|
OCR Scan
|
8f299bo 615ic 2 bo 565bf 649+7ai 757transistors ai 757bf415boitier to 126transistor esm 30to-126-fto 126
|
PDF
|
transistor BF 258
Contextual Info: Standard ICs High voltage, high current Darlington transistor array B A 1 2 0 0 1 B /B A 1 2 0 0 2 /B A 1 2 0 0 3 B /B A 1 2 0 0 3 B F / B A 1 2 0 0 4 B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high
|
OCR Scan
|
ba12001bba12002ba12003bba12003bf+3ba12004b500matransistor bf 258
|
PDF
|
sot-23 3341
Abstract: transistor bu 126
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • a^SQD^b GOD^MMB 5 • ▼ e le c tro n ic CrwttrtTfcchnotogiw' BU 1 26 T - 3 3 - lf Silicon NPN Power Transistor Applications: Voltage regulator, inverter, switching mode power supply Features: • InTripple Diffusion Mesa Technique
|
OCR Scan
|
15a3dinsot-23 3341transistor bu 126 |
PDF
|
3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
|
OCR Scan
|
3866sbf247 equivalentbrochage des circuits integrestriac gk+6transistor bc 564bc547eti small signal fet cataloguebcw 91 transistorsescosescosem
|
PDF
|
transistor bc 237c
Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • iH E O O 'lb GOGTMM? IAL66 T BU 204 • BU 205 • bU ¿u6 TnmiPttSMKOlN] electronic Creitiv* ”ftehnOtoaiM r-2 3 ~ 0 7 Silicon NPN Power Transistors Applications; Horizontal deflection circuits in black and white TV-receivers
|
OCR Scan
|
ial6615a3dintransistor bc 237ctransistor 206+7bc 205 transistor npnbc 206 transistorbu205bu206as 205 transistorbf 204 115transistor bc 206
|
PDF
|
TRANSISTOR BC 814
Abstract: TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257
Contextual Info: . TELEFUNKEN ELECTRONIC file D ^•3 m W I M M electronic Creative Technologies ■ a^BOG^b 00053^2 5 /~ZS~ CFK10 N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with
|
OCR Scan
|
cfk10569-gstransistor bc 814transistor "bc 258+6transistor bf 257ci 4580marking cfkbc 251 transistortransistor bc 256telefunken u 257
|
PDF
|
BA1200T
Contextual Info: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting of seven circuits of Darlington transistors.
|
OCR Scan
|
ba12001b/ba12002/ba12003b/ba12003bf/ba12004bba12001bba12002+3ba12003bba12003bfba1200t
|
PDF
|
TRANSISTOR BC 208
Abstract: transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U
Contextual Info: i l . •.-.— 17E D TELEFUNKEN ELECTRONIC ■ 0 1 2 0 0 ^ 0001451 1 BU 207 * BU 208 • BU 209 TTf Li(FTOKIM electronic C re itM le c h n o to g w s r - 33-07 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in colour TV-receivers
|
OCR Scan
|
r-33-07t012615a3dintransistor bc 208+9transistor bc 207 npntransistor bc 209 npntransistor bc 209 btransistor bu 208transistor d 2588transistor bc 209transistor bc 207transistor bc 208 b3100u
|
PDF
|
VLN 2003
Abstract: BA12002 12003B transistor BF 257 transistor BF 258 BA12001B BA12003B BA12003BF BA12004B high current darlington transistor
Contextual Info: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting o f seven circuits o f Darlington transistors.
|
OCR Scan
|
ba12001b/ba12002/ba12003b/ba12003bf/ba12004bba12001b+8ba12002ba12003bba12003bfvln 200312003btransistor bf 257transistor bf 258high current darlington transistor
|
PDF
|
catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
|
OCR Scan
|
catalogue des transistors bipolaires de puissancebrochage des circuits integresh3c1-07lb 124 transistor equivalente+6transistor a2222equivalent of transistor bc212 bc 214bfw-11 terminalssescosem transistorequivalente transistor bc 141brochage bcw91
|
PDF
|
a12-002b
Abstract: LF350 BA12002
Contextual Info: Standard ICs High voltage, high current Darlington transistor array BA12001B/BA12002/BA12003B/BA12003BF/ BA12004B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high voltage withstand resistance and consisting of seven circuits o f Darlington transistors.
|
OCR Scan
|
ba12001b/ba12002/ba12003b/ba12003bf/ba12004bba12001bba12002+4ba12003bba12003bfa12-002blf350
|
PDF
|
FET BFW 43
Abstract: MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257
Contextual Info: 4.2+« 4.2+* I OOOOO C MC MC MC MC M O O O 1O C Mt—i— 1 C M Oo C MC M - I I I I CMC MC MC MC M C MID ID 1 C M OO C MC M lO ID ID LOLD C MC MC M*- t-* o' ò o’ O* O 1 LOLOLOLO C MC MC MC M o d O* O 0> «—C Mr- C MC M - Ul O> > IO o o o o CO»—« —*—
|
OCR Scan
|
0000b7do-106o-92fo-92a+14to-02melf-002melf-006to-237fet bfw 43mpsa 506 transistortransistor bc 157transistor bc 530transistor bf 298bft58transistor mpsa 42bfw 43 transistortransistor 2sa transistor 2 sa 72transistor bf 257
|
PDF
|
BF298
Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
Contextual Info: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .
|
OCR Scan
|
bcw94bf298bc 458transistors bc 458+7transistors bc 548 bc 558transistor bc 458transistor bf 422 npnbc 457transistors bc 548 bc 558 pnpbc 557 npntransistor bc 457
|
PDF
|
|
|
APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
|
OCR Scan
|
af106apc ups circuit diagram rs 1500apc ups es 500 circuit diagramapc ups 650 circuit diagram+7schematic diagram apc back ups xs 1000taa550apc ups circuit diagramups apc rs 1000 circuit diagramups apc rs 800 circuit diagramapc back es 500 ups circuit diagramcircuit diagram apc ups 700
|
PDF
|
RCA 2N3055 transistor
Abstract: 2N3442 RCA transistor BF 257 2N3055 RCA rca 2n3771 2N3772 RCA rca 2n3055 2N4348 RCA 2n3055r rca transistor
Contextual Info: APPLICATION INFORMATION . Power Types for Electrostatic Deflection and Video Output Power Types [N-P-N & P-N-P] as Pass Transistors for Series Regulator Service Peak Output Voi tage V Pass Transistor Conditions 10 to 60 Bandwidth > 1MHz Regulator Output Current (1 ) — A
|
OCR Scan
|
2n2102l2n4036j2n14822n5321+162n53232n61792n61812n30542n59552n5497rca 2n3055 transistor2n3442 rcatransistor bf 2572n3055 rcarca 2n37712n3772 rcarca 2n30552n4348 rca2n3055rrca transistor
|
PDF
|
RCA 431 transistor
Abstract: 2N3442 RCA RCA 2N3055 transistor 2N3055 RCA 2n3773 rca RCA 40852 rca 2n3055 transistor RCA 41013 transistor BF 257 2N5416 RCA
Contextual Info: APPLICATION INFORMATION. . . Power Types [N-P-N & P-N-P] for Inverter/Switching Regulator Service Frequency Range 60 Hz to 50 kHz Peak Voltage Required Up to 0.2 A 0.2 to 1 A 10 to 60V 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 60 to 150V 2N1486 2N2102 2N4036
|
OCR Scan
|
2n30532n40372n53212n5323+162n61792n61812n30542n5497a2n30552n3772rca 431 transistor2n3442 rcarca 2n3055 transistor2n3055 rca2n3773 rcarca 40852rca 2n3055transistor rca 41013transistor bf 2572n5416 rca
|
PDF
|
transistor BF 257
Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
Contextual Info: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität
|
OCR Scan
|
transistor bf 257bf414transistor bf 414tfk 513+6bf 414transistor bf 258414 transistorai-257db258kleine
|
PDF
|
laser diode spice model simulation
Abstract: HFAN-06
Contextual Info: MAX3663ETG Input Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic
|
Original
|
max3663etgh21m022hde072021591e-018+2laser diode spice model simulationhfan-06
|
PDF
|
EM 231 WIRING DIAGRAM
Abstract: em 223 cn TRANSISTOR BO 344 siemens rs 1064
Contextual Info: SIEMENS NPN Silicon RF Transistor BFP 420 Features • For H igh G ain Low N oise A m plifiers • • For O scillators up to 9 GHz N oise Figure F = 1.05 dB at 1.8 G H z O utstand in g G ms = 20 dB at 1.8 G H z • • • T ransition Frequency fT > 20 GHz
|
OCR Scan
|
62702-f1591em 231 wiring diagramem 223 cntransistor bo 344+1siemens rs 1064
|
PDF
|
2N3055 RCA
Abstract: RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A
|
OCR Scan
|
lc-30a130x130180x180210x210+15bu1062n58402n52402n65102n63082n58052n3055 rcarca 40852transistor rca 410132n3772 rca2n3442 rcarca 2n3055 transistortx2n3440transistor bf 257rca h 410
|
PDF
|
HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
|
OCR Scan
|
hbf4727azd 607 - triaczd 607 - triac circuithbf 4727a+6tda3310hbf4727hbf4740dtl-9307-stage frequency dividerbf479s
|
PDF
|
RCA transistor 40410
Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410
Contextual Info: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V
|
OCR Scan
|
lc-30a130x130180x180210x210+16bu1062n58402n52402n65102n63082n5805rca transistor 40410rca transistor 40319rca transistor 40406rca 40872rca 40636rca 40634rca 40872 transistorrca 2n3771 power circuitrca 40595 transistorrca 40410
|
PDF
|
RCA 40411 transistor
Abstract: audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz . . . Ir to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W max. TO-39 * le * - 1 A MX. P j « 7 W max. (T O - » ) • ic ■ 2 A max. P j “ 10 f t max. (TO-39) ft 30 x 30* 30x30 2N2102 (N-P-N]
|
OCR Scan
|
ito-391pt-85-11780-12sw30x30+1242x42103x103rca 40411 transistoraudio amplifier with rca 40411transistor rca 383rca 4041140411 transistorrca power transistor 40411rca 40250rca 40250 transistortransistor rca 40250rca transistor 40411
|
PDF
|