TRANSISTOR BC817 Search Results

TRANSISTOR BC817 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR BC817 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
KIA78pI Abstract: transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78pI transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P	PDF
BC817DS Abstract: Philips sot23 MARKING CODE N3 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BC817DS NPN general purpose double transistor Product specification Supersedes data of 2002 Aug 09 2002 Nov 22 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES	Original	M3D302 BC817DS SCA74 613514/02/pp8 BC817DS Philips sot23 MARKING CODE N3	PDF
15002 Abstract: Transistor BC817 transistor 6D sot23 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC817 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 12 1999 Jun 01 Philips Semiconductors Product specification NPN general purpose transistor BC817 FEATURES PINNING	Original	M3D088 BC817 BC807. BC817-25 BC817-40 15002/03/pp8 15002 Transistor BC817 transistor 6D sot23	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC817W NPN general purpose transistor Product specification Supersedes data of 1997 Mar 05 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC817W FEATURES PINNING	Original	M3D102 BC817W OT323 BC807W. BC818W BC817-16W BC818-16W. SCA63	PDF
Transistor 8fc Abstract: marking A1 TRANSISTOR transistor 6B transistor marking MH 6C TRANSISTOR MARKING marking AF BC817W Contextual Info: BC817W NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description The BC817W is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Features * * * * For General AF Appliacations	Original	BC817W BC817W 100mA 100MHz width380 01-Jun-2002 Transistor 8fc marking A1 TRANSISTOR transistor 6B transistor marking MH 6C TRANSISTOR MARKING marking AF	PDF
BC817DS Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BC817DS NPN general purpose double transistor Product data sheet Supersedes data of 2002 Aug 09 2002 Nov 22 NXP Semiconductors Product data sheet NPN general purpose double transistor FEATURES BC817DS	Original	M3D302 BC817DS 613514/02/pp7 BC817DS	PDF
BC817-40 Abstract: BC807 BC817 BC817-16 BC817-25 marking 6b philips Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BC817 NPN general purpose transistor Product specification Supersedes data of 1999 Jun 01 2004 Jan 05 Philips Semiconductors Product specification NPN general purpose transistor BC817 PINNING FEATURES • Collector current capability IC = 500 mA	Original	BC817 BC807. BC817-16 BC817-25 BC817-40 SCA75 R75/04/pp8 BC817-40 BC807 BC817 BC817-16 BC817-25 marking 6b philips	PDF
TRANSISTORS BJT bc548 Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002	Original	OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302	PDF
Contextual Info: Philips Semiconductors Product sgee ification NPN general purpose transistor FEATURES BC817W; BC818W PIN CONFIGURATION • High current • S -m ini package. JBi_ EL 1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN 1 'op view	OCR Scan	BC817W; BC818W OT323 BC817-16W BC817-25W BC817-40W BC817W BC818W: BC818-16W	PDF
BC817DPN Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BC817DPN NPN/PNP general purpose transistor Product data sheet Supersedes data of 2002 Aug 09 2002 Nov 22 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor FEATURES BC817DPN QUICK REFERENCE DATA	Original	M3D302 BC817DPN 613514/02/pp10 BC817DPN	PDF
Contextual Info: bbS3T31 QDE4M5Q 73T » A P X Philips Semiconductors NPN general purpose transistor BC817W; BC818W AMER PHILIPS/DISCRETE FEATURES Product specification b7E D PIN CONFIGURATION • High current CM a; • S -m in i package. 1 D ESCRIPTION NPN transistor in a plastic SOT323	OCR Scan	bbS3T31 BC817W; BC818W OT323 M8C87 M8B012 BC817-16W BC817-25W BC817-40W	PDF
BFG480W Abstract: BC817 RF POWER TRANSISTOR NPN 3GHz Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 1998 Jul 09 Philips Semiconductors Preliminary specification NPN wideband transistor BFG480W FEATURES	Original	M3D124 BFG480W SCA60 125104/00/02/pp16 BFG480W BC817 RF POWER TRANSISTOR NPN 3GHz	PDF
301 marking code PNP transistor Abstract: bc807 marking code Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W PNP general purpose transistor Product specification Supersedes data of 1997 Jun 09 1999 May 18 Philips Semiconductors Product specification PNP general purpose transistor BC807W FEATURES PINNING	Original	M3D187 BC807W OT323 BC817W. BC807-25W BC807-16W 115002/00/03/pp8 301 marking code PNP transistor bc807 marking code	PDF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC807 PNP general purpose transistor Product specification Supersedes data of 1997 Feb 28 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose transistor BC807 FEATURES PINNING	Original	M3D088 BC807 BC817. BC807-16 BC807-25 BC807-40 MAM256 SCA63	PDF

K TRANSISTOR SMD MARKING CODE Abstract: TRANSISTOR SMD MARKING CODES BC817 PDTA323TK PDTC323TK SC-59A smd marking code BC817 transistor SMD MARKING CODE MARKING CODE SMD IC Contextual Info: PDTC323TK NPN 500 mA, 15 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 01 — 3 June 2005 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistor RET in a small SOT346 (SC-59A) SMD plastic package.	Original	PDTC323TK OT346 SC-59A) PDTA323TK. BC817 K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODES PDTA323TK PDTC323TK SC-59A smd marking code BC817 transistor SMD MARKING CODE MARKING CODE SMD IC	PDF
PDTD113ZT Abstract: TRANSISTOR SMD MARKING CODES BC817 PDTB113ZT PDTD113ZK PDTD113ZS Contextual Info: PDTD113ZT NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 02 — 23 March 2009 Product data sheet 1. Product profile 1.1 General description NPN 500 mA Resistor-Equipped Transistor RET in a small Surface-Mounted Device (SMD) plastic package.	Original	PDTD113ZT PDTB113ZT. BC817 PDTD113ZT TRANSISTOR SMD MARKING CODES PDTB113ZT PDTD113ZK PDTD113ZS	PDF
BC807A Abstract: BC817A Contextual Info: BC807A BC807A Silicon PNP Epitaxial Transistor Description: The BC807A is designed for audio frequency general amplifier applications. Features: ●Excellent hFE Linearity ●Complementary to BC817A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um	Original	BC807A BC807A BC817A 440um 440um 110um 110um BC817A	PDF
BC807B Abstract: BC817B Contextual Info: BC807B BC807B Silicon PNP Epitaxial Transistor Description: The BC807B is designed for audio frequency general amplifier applications. Features: ●Excellent hFE Linearity ●Complementary to BC817B Chip Appearance Chip Size 490umx490um Chip Thickness 210±20um	Original	BC807B BC807B BC817B 490um 490um 110um 110um BC817B	PDF
BC817A Abstract: BC807A Contextual Info: BC817A BC817A Silicon NPN Epitaxial Transistor Description: The BC817A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um	Original	BC817A BC817A BC807A 440um 440um 110um 110um BC807A	PDF
BC817B Abstract: BC807B Contextual Info: BC817B BC817B Silicon NPN Epitaxial Transistor Description: The BC817B is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807B Chip Appearance Chip Size 490umx490um Chip Thickness 210±20um	Original	BC817B BC817B BC807B 490um 490um 110um 110um BC807B	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC807-16 BC807-25 BC807-40 TRANSISTOR PNP SOT-23 FEATURES •Ldeally suited for automatic insertion ·epitaxial planar die construction ·complementary NPN type available(BC817)	Original	OT-23 BC807-16 BC807-25 BC807-40 OT-23 BC817) -10mA, -100mA -500mA, -50mA	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors BC807-16W BC807-25W BC807-40W TRANSISTOR PNP SOT-323 FEATURES Ldeally suited for automatic insertion z epitaxial planar die construction z complementary to BC817W	Original	OT-323 BC807-16W BC807-25W BC807-40W OT-323 BC817W 07-16W -100mA -500mA 07-25W	PDF
2BC817 Abstract: 2SC5344SF BC807 BC817 Contextual Info: BC817 Semiconductor NPN Silicon Transistor Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC807 Ordering Information Type NO. BC817 Marking	Original	BC817 BC807 OT-23 KST-2003-000 500mA, 300mA 100mA 2BC817 2SC5344SF BC807 BC817	PDF
BC807-16W Abstract: BC807-25W BC807-40W BC807W BC817W Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors BC807-16W BC807-25W BC807-40W TRANSISTOR PNP SOT-323 FEATURES Ldeally suited for automatic insertion z epitaxial planar die construction z complementary to BC817W	Original	OT-323 BC807-16W BC807-25W BC807-40W OT-323 BC817W 07-16W -100mA -500mA 07-25W BC807-16W BC807-25W BC807-40W BC807W BC817W	PDF

TRANSISTOR BC817 Search Results

TRANSISTOR BC817 Result Highlights (5)

TRANSISTOR BC817 Datasheets Context Search

KIA78*pI

BC817DS

15002

Transistor 8fc

BC817DS

BC817-40

TRANSISTORS BJT bc548

BC817DPN

BFG480W

301 marking code PNP transistor

K TRANSISTOR SMD MARKING CODE

PDTD113ZT

BC807A

BC807B

BC817A

BC817B

2BC817

BC807-16W