TRANSISTOR A63 Search Results

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A

A6331

Contextual Info: Product Description Stanford Microdevices’ SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

TRANSISTOR A63

Abstract: 5894 A63 marking amplifier DC-3000 SGA-6386
Contextual Info: Product Description Stanford Microdevices’ SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

TRANSISTOR A63

Abstract: EDS-100620 SGA-6389 a63 TRANSISTOR
Contextual Info: Product Description Stanford Microdevices’ SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

Contextual Info: Product Description Stanford Microdevices’ SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

2SC4247

Contextual Info: TOSHIBA 2SC4247 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4247 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • 2.1 ±0.1 Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C)

EDS-100620

Contextual Info: Preliminary Product Description SGA-6389 Stanford Microdevices’ SGA-6389 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to

Contextual Info: Product Description SGA-6386 Stanford M icrodevices’ SG A-6386 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

Contextual Info: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

2N6379

Abstract: 2N6378 MIL-PRF19500 be5a
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999 INCH-POUND MIL-PRF-19500/515C 25 July 1999 SUPERSEDING MIL-S-19500/515B 15 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER

a6378

Abstract: 2N6378 JANTX 2N6378 2N6379 3041 v
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 June 2007. INCH-POUND MIL-PRF-19500/515D 12 March 2007 SUPERSEDING MIL-PRF-19500/515C 25 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER,

TRANSISTOR A63

Abstract: sot23 A63 a63 TRANSISTOR MPSA63 MMBTA63 MPSA64 PZTA63
Contextual Info: MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.

Contextual Info: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS T A = 25°C unless o th e rw ise noted

25c reference top mark sot23

Abstract: sot23 A63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

MPSA63

Abstract: TRANSISTOR A63 MMBTA63 MPSA64 PZTA63 Transistor MPSA63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

TRANSISTOR A63

Abstract: sot23 A63 FAIRCHILD SOT-223 MARK MPSA64 MMBTA63 MPSA63 PZTA63
Contextual Info: S E M IC O N D U C T O R tm MMBTA63 SOT-23 PZTA63 B / PZTA63 TO-92 / MMBTA63 MPSA63 SOT-223 M a rk : 2U PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61.

M57962AL

Abstract: applications of ujt IGBT with V-I characteristics UJT APPLICATION TDS340A PC817 ujt transistor am503s IGBT 10 A igbt high power
Contextual Info: 2000 * m 5 gj IGBT Miihfc B p A -^ i f c t f c l * # 200331 tt# Ä . * à iitfc T Î* IÇ Â Æ + W a * # « , $ f t i 3 IGBT & £ £ # £ : ! * 3B# tfTC, 1 31 la & ä fc # jR S J I f r f IGBT (Insulated Gate Bipolar Transistor) ;êlÉJ BIT MOSFET älj&ÖilSi'ä'

Contextual Info: 131,072 W O R D S X 8 BIT C M O S P SEU D O STATIC R A M DESCRIPTIO N The TC518129A Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A Family utilizing one transistor dynamic memory cell with CMOS peripheral circuit provides large capacity , high speed and low power features. The feature includes

TRANSISTOR A63

Contextual Info: Cascadable Amplifier 5 to 1000 MHz A63/ SMA63 V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) • HIGH GAIN: 16 dB (TYP.) Description The A63 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

TRANSISTOR A63

Abstract: a63 TRANSISTOR SMA63 CA63
Contextual Info: A63 / SMA63 Cascadable Amplifier 5 to 1000 MHz Rev. V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) • HIGH GAIN: 16 dB (TYP.) Description The A63 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

Contextual Info: A63/SMA63 5 TO 1000 MHz CASCADABLE AMPLIFIER • LOW NOISE: 3.0 dB TYP. · MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) · HIGH GAIN: 16 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 12/00)* Characteristics Typical Frequency Small Signal Gain (min.)