TRANSISTOR A01 Search Results

transistor tt 2222

Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
Contextual Info: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­

ATC100B471JT200XT

Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

buz72a

Contextual Info: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

CPH5516

Contextual Info: CPH5516 Ordering number : ENA0196 CPH5516 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, Lamp drivers, Motor drivers, IGBT gate drive. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density

AG TRANSISTOR

Abstract: Bipolar Junction Transistor siemens power transistor SOT363-Package amplifier siemens sot-363 transistor amplifier siemens bipolar transistor mobile rf power amplifier transistor RF POWER TRANSISTOR NPN
Contextual Info: Application Note No. 048 Discrete & RF Semiconductors RF-GaAs-PA Drain Switch with Current Recycling This application note describes the usage of the SIEMENS BCP 72 pnp-bipolar junction transistor as drain switch of GaAs RF Power Amplifier stages. The base current of the switching transistor can be recycled to supply the driver

2SA2179

Abstract: 2SA21
Contextual Info: 2SA2179 Ordering number : ENA0199 2SA2179 PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications Applications • High-speed switching applications switching regulators, drive circuit . Features • • • • Adoption of MBIT processes.

2SC5957M

Abstract: iT063
Contextual Info: 2SC5957M Ordering number : ENA0152 2SC5957M NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Specifications

Contextual Info: VP0550 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0550 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

VP3203N3-G

Abstract: sivp
Contextual Info: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

DN2530N8-G

Abstract: DN2530 DN2530N3 DN2530N3-G DN2530N8
Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features ► ► ► ► ► ► General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Contextual Info: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: 1Stanford Microdevices Product Description SNA-676 Stanford M icrodevices’ SNA-676 is a high-perform ance GaAs Heterojunction Bipolar Transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is utilized for broadband perform ance to 6.5

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

K 1358 fet transistor

Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.

G2225X7R225KT3AB

Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

NIPPON CAPACITORS

Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

Contextual Info: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell

toshiba tc110g

Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective

BFP520

Abstract: 702 Z TRANSISTOR SIEMENS BFP520
Contextual Info: Application Note No. 051 Discrete & RF Semiconductors R. Sedlmaier, HL HF AT SIEGET45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz This application note describes an example of a Low Noise Amplifier with the BFP520 5th Generation, SOT343 SIEGET 45-Line. Improved performance in Gain

C1550

Abstract: p-channel 250V power mosfet
Contextual Info: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode normally-off transistor utilizing

BX-1387

Abstract: 4535A BX1387
Contextual Info: Ordering number: EN 4535A FP208 No.4535A PNP Epitaxial P lanar Silicon Transistor SAIÊYO i Driver Applications F eatu re s • Composite type with 2 PNP transistors in one package,facilitating high-density mounting. •The FP208 is composed of 2 chips each equivalent to the 2SB1121.

MA9264

Contextual Info: MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces June 1999 version, DS3692-6.0 DS3692-7.0 January 2000 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with

TB6552

Abstract: SSOP16 SSOP16-P-225-0 TB6552FL TB6552FN
Contextual Info: TB6552FN/FL Toshiba Bi-CD Integrated Circuit Silicon Monolithic TB6552FN,TB6552FL Dual-Bridge Driver IC for DC motor TB6552FN/FL is a dual-bridge driver IC for DC motor with output transistor in LD MOS structure with low ON-resistor. Two input signals, IN1 and IN2, can chose one of four modes such as