AFT09MS015N Search Results

AFT09MS015N Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
AFT09MS015NT1		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, TRANSISTOR RF LDMOS 16W PLD	Original	PDF		18

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NXP Semiconductors AFT09MS015NT1 RF MOSFET LDMOS 12.5V PLD-1.5W
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DigiKey ()	AFT09MS015NT1	Digi-Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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Avnet Americas	AFT09MS015NT1	Reel		10 Weeks	1,000	1 - 10 - 100 - 1000 $15.48 10000 $14.48	Buy Now
Arrow Electronics	AFT09MS015NT1	Cut Strips	1	10 Weeks	1	1 $3.59 10 $3.59 100 $3.59 1000 $3.59 10000 $3.59	Buy Now
Newark	AFT09MS015NT1	Bulk			1,000	1 - 10 - 100 - 1000 $14.77 10000 $14.77	Buy Now
Bristol Electronics	AFT09MS015NT1		49		1	1 $6.27 10 $4.08 100 $2.93 1000 $2.93 10000 $2.93	Buy Now

Quest Components	AFT09MS015NT1		39			1 $8.40 10 $4.20 100 $4.20 1000 $4.20 10000 $4.20	Buy Now
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Avnet Silica	AFT09MS015NT1			12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip Stock	AFT09MS015NT1		23,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	AFT09MS015NT1			12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	AFT09MS015NT1		20,000			1 - 10 $10.36 100 $6.91 1000 $6.91 10000 $6.91	Buy Now
Freescale Semiconductor AFT09MS015NT1 Transistors
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Vyrian	AFT09MS015NT1		263			1 - 10 - 100 - 1000 - 10000 -	Get Quote

AFT09MS015N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136	Original	AFT09MS015N AFT09MS015NT1	PDF
A9M15 Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136	Original	AFT09MS015N AFT09MS015NT1 A9M15 AFT09MS015N TRANSISTOR Z10 D55295 815 transistor	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136	Original	AFT09MS015N AFT09MS015NT1	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136	Original	AFT09MS015N AFT09MS015NT1	PDF
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Contextual Info: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original		PDF
A5M06 Abstract: Transistor Z17 Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17	PDF