TRANSISTOR 7S Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7

Contextual Info: INTEGRATED CIRCUITS - DISPLAY DRIVERS MTE2075 14-Lead DIP, See Diag. 247 5-Stage Transistor Array "/Strobe NTE2077 14-Lead DIP, See Diag. 247 6-Stage Darlington Transistor Array W/Clamp Diode NTE2078, 14-Lead DIP, See Diag. 247 NTE2084 5-Stage Darlington Transistor Array

lem HA

Abstract: transistor bu2520d BU2520D
Contextual Info: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic

VF155

Abstract: VF150 vf152 VF153 vf154 VF155-2 VF155-1 VF155B VF150-1 VF155A
Contextual Info: m MATEC CORP/ VALPEY-FISHER SÔL.10S4 00QQ35L 7ST bME D IVPC OSCILLATORS TTL LOGIC HYBRID CRYSTAL C LO C K OSCILLATORS VF150 Series TTL Hybrid Crystal Clock Oscillators Valpey-Fisher’s VF150 series designates a family of oscillators compatible with transistor-transistor-logic circuitry often

8ch pnp DARLINGTON TRANSISTOR ARRAY

Abstract: pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
Contextual Info: [ 1 ] Product Code Index [ 1 ] Product Code Index 1. IFD Family Tree Inter-Face Driver S-Driver Series TD62Sx×× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type MCT array

BLY94

Abstract: philips bly94
Contextual Info: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

MN2488 equivalent

Abstract: MN2488 transistors MN2488 sanken power transistor MN2488 mn2488 transistor MN2488 transistor equivalent sanken lot number sanken power transistor MICA-14 G746
Contextual Info: SünñR pñ SPE C IFIC A TIO N S pp A SANKEN ELECTRIC CGMPANY, LTD. DEVICE TYPE NAME 3 ^ 7 - m n2488 SANKEN MOLD TYPE SILICON POWER TRANSISTOR MN2488 1. mmwm Scope a }• 7 "s 7s & M N 2488 The present specifications shall apply to Sanken silicon power transistor type MN2488.

ASP-0910

Abstract: 900 mhz frequency generator silicon bipolar transistor rf power amplifier
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE HEW LETT PA C K AR D m » • 44L+7S6M 4 ÛM ■ HPA ASP-0910 "IO Watt, 900 MHz Silicon Power Transistor Power Flange Features • • • • • • □ ÜO'iTbM Power Out: 10 Watts Common Base Class C Power Transistor Frequency: 800-960 MHz

transistor BD 110

Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
Contextual Info: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal

fmw5

Contextual Info: 'S'/7s $ / T r a n s i s t o r s h 7 UMW5N FMW5 UMW 5N/FMW 5 Kh Dual Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor —jfö'hitt-§-JtlISffl/General Small Signal Amp. • IM • ^W ^äsEI/Dim ensions Unit: mm 1) * - / \ " - 5. - i - J U 21B<7>

2DI75M-120

Abstract: 1di200
Contextual Info: ^ g jjjf /\°7 — x / W 7s / Power Devices • / v'9 —h 7 > y X ^ i y . i “ ^ Power Transistor Modules 1 2 0 0 V ? 7 * S h F E / '* 7 - h 7 > '> '^ 5 f ;E ' > ' a - ^ 1200 volts class high hFE power transistor modules m £ V cbo Device type 2DI50M-120

carbon resistors

Abstract: BLX13 BLX13C philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor
Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> bb53*i31 □ DS*ìSS2 T4T A E3LX13U H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear

BUK455-60A

Abstract: buk455
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

R Y SMD TRANSISTOR

Abstract: 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100
Contextual Info: Preliminary specification Philips Semiconductors UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.

Contextual Info: h 7 > y 7s $ /Transistors UMA10N/FMA1OA b ÿ s y Z Ç / Dual Mini-Mold Transistor 1 1 ° £ * y 7 » y i s - 1 M PNP y U □ > K ÿ > y 7 $ Epitaxal Planar PNP Silicon Transistor •f > / î —$ F ÿ'C A'/Inverter Driver 1 UMT SC-70) SMT (SC-59) i f ic 2

buk564-60h

Abstract: PD10g
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

BUK437-500A

Abstract: BUK437-500B buk437 S1216
Contextual Info: Philips Components BUK437-500A BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

transistor BD 800

Abstract: transistor BD 110
Contextual Info: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal

BUK456

Abstract: BUK456-60A BUK456-60B T0220AB BUK456-80A
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711062b OObMlDb 2Ô7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK446-1000B

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

RU201

Contextual Info: RU201 S ~7 > v 7s $ /Transistors RU201 Transistor Unit Composite Transistor / \ * 7 7 7 7 > ~ ? / Buffer Amplifier • i+ÜB^tÜH/Dim ensions (Unit : mm) • ! 1) 1 $ 7 ? 7 i P 9 lllK ffllC , r t- iT (R i = R2= 4 7 k Q , R 3 = 1 .5 k Q )0 2) tu tu > 7 t UTt ef f l 7 $ Z 0

ST DARLINGTON TRANSISTOR

Abstract: ULN2003 hfe 1976 Darlington pair IC single
Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output d or n package (TOP VIEW) • High-Voltage Outputs . . . 100 V