TRANSISTOR 44T Search Results

Contextual Info: Philips Semiconductors kb53R31 003213^ 44T IHAPX Product specification NPN 1 GHz wideband transistor £ BFW92 N AUER PHILIPS/DISCRETE b'lE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: Central CZT2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and

44t transistor

Contextual Info: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V 15 A V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~ *th J C DC, pro Zweig / per arm

44t transistor

Contextual Info: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V ces Maximum rated values 600 V 15 A lc Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~*thJC DC, pro Zweig / per arm

CZT2222A

Abstract: vqe 14 E vqe 14 vqe 71 44t transistor transistor 44t
Contextual Info: Central“ C Z T2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The C E N TR A L SE M IC O N D U C T O R CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and

C7021

Abstract: PT600T C7035
Contextual Info: v r e DATE : ‘REP4RED BY: 2’ “-” 1 lsPECNO. DG-953054 1 / 1 1 PAGE ELECTRONIC COMPONENTS GROUP REP E E~TATIVE,DIVISION SHARP CORPORATION o SPECIFICATION -w, ? O u“DEVICES.~IV. {/tFl/{44tl/ “ ‘“ 4 “ ‘-> < \ ~ DEVICE SPECIFICATION FOR PHOTO-TRANSISTOR

Contextual Info: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

222203028109

Abstract: IR802 transistor PH7n vogt 44t transistor 2222 kn a ceramic trimmer capacitor International Power Sources ph7n tl 4013
Contextual Info: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS BLF547 INTERNATIONAL FEATURES SbE 7110fl2b 00414012 flJ3 BIPHIN T> PIN CONFIGURATION 7 - 3 * ? - ¡ S ' • • • • High power gain Easy power control Good thermal stability

transistor 2SA15

Abstract: 2sa153 2SA15 2SA1539 2SC3954 QDSD475 SA15
Contextual Info: Ordering number: EN 2 4 3 8 A 2SA1539/2SC3954 N0.2438A PNP/NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications i Applications . High-definition CRT display video output, wide-band amp Features . High fT: f\p=500MHz

2SK2228

Abstract: Transistor 3202 1 A 60
Contextual Info: TO SH IBA SDOSSO T05H IBA FIELD EFFECT TRANSISTOR 2SK2228 QQE33Ô3 447 SILICON N CHANNEL M OS TYPE L2-tt-MOSIV 2SK2228 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: HD66330T TFT Driver -(6 4 -Level Gray Scale Driver fo r TFT Liquid Crystal Display) —Preliminary — Description Features The HD66330T, a signal driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture element (pixel) area. The

Contextual Info: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

2SK2235

Abstract: DDS3400 44t transistor DDS34
Contextual Info: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm

SAA 7010

Abstract: 12533-5 TL/H/12533-6 LMC6009 LMC6009MT LMC6009MTX MTD48 44t Short Circuit Protection RRD-B30M56 BEL 640 transistor
Contextual Info: ADVANCE INFORMATION Semiconductor April 1996 LMC6009 9 Channel Buffer Amplifier for TFT-LCD General Description Features The LMC6009 is a CMOS integrated circuit that buffers 9 reference voltages for gamma correction in a Thin Film Transistor Liquid Crystal Display TFT-LCD . Guaranteed to

44TG

Abstract: TD9944 TD9944TG-G
Contextual Info: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: HD6631OT- TFT-Type LCD Driver for VDT Description The HD66310T is a drain bus driver for TFT-type (thin film transistor) LCDs. It receives 3-bit digital data for one dot, selects a level from eight voltage levels, and outputs the level to an LCD.

Contextual Info: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6