TRANSISTOR 4400 Search Results
TRANSISTOR 4400 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 54F573FM/B | Rochester Electronics LLC | 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, |
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TRANSISTOR 4400 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+7 | |
TRANSISTOR 2N 4401
Abstract: transistor 4400 4401 transistor 2N4400 2N4401 4401 NPN 4401 transistor transistor 2n transistor 4401
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625mwtransistor 2n 4401transistor 44004401 transistor+6 | |
NPN medium power transistor in a SOT packageContextual Info: UNISONIC TECHNOLOGIES CO., LTD UN1596 Preliminary NPN SILICON TRANSISTOR NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR DESCRIPTION The UTC UN1596 are series of NPN silicon planar transistor, which has gain of 500 at IC=100mA.It can be used in such |
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un1596100maun1596lun1596g+5 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UN1596 Preliminary NPN SILICON TRANSISTOR NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR DESCRIPTION The UTC UN1596 are series of NPN silicon planar transistor, which has gain of 500 at IC=100mA.It can be used in such |
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un1596100maun1596l-aa3-run1596g-aa3-r+2 | |
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
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2sb504kpl 30092sb502bly34+6 | |
rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
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rej01g0001-0400rjh3047rjh3077rjp3047+7 | |
SC15
Abstract: LTE42008R Data Handbook sc15
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lte42008rot440asca53127147/00/02/pp12+2 | |
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Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES |
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np80n055clenp80n055dlenp80n055eleo-220ab+2 | |
MP-25
Abstract: NP80N055CLE NP80N055DLE NP80N055ELE NP80N055KLE
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np80n055clenp80n055dlenp80n055elenp80n055kle+4 | |
d1409
Abstract: MP-25 NP82N055CLE NP82N055DLE NP82N055ELE NP82N055KLE
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np82n055clenp82n055dlenp82n055elenp82n055kle+5 | |
d1415
Abstract: NP36N055HLE NP36N055ILE
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np36n055hlenp36n055ileo-251o-252+1 | |
d1415
Abstract: NP36N055SLE NP36N055HLE NP36N055ILE
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np36n055hlenp36n055ilenp36n055sleo-251+2 | |
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Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CLE, NP82N055DLE, NP82N055ELE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES |
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np82n055clenp82n055dlenp82n055eleo-220ab+2 | |
D1409
Abstract: MP-25 NP80N055CLE NP80N055DLE NP80N055ELE
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np80n055clenp80n055dlenp80n055eleo-262+4 | |
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NP80N055ELEContextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. |
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np80n055clenp80n055dlenp80n055eleo-220ab+2 | |
MP-25
Abstract: NP82N055CLE NP82N055DLE NP82N055ELE
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np82n055clenp82n055dlenp82n055eleo-262+3 | |
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Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES |
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np36n055hlenp36n055ileo-251o-252 | |
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Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055CLE, NP82N055DLE, NP82N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. |
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np82n055clenp82n055dlenp82n055eleo-220ab+2 | |
2n4401
Abstract: TRANSISTOR 2N 4401 "cb it" 4400 transistor transistor 4400
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2n4400/4401625mw2n4401lc50ma+8 | |
NP80N055DLE
Abstract: NP80N055ELE MP-25 NP80N055CLE
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np80n055clenp80n055dlenp80n055eleo-220ab+2 | |
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
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2cy172cy182cy192cy20+12 | |
LTE42012RContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT440A • Interdigitated structure provides high emitter efficiency |
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lte42012rot440asca53127147/00/02/pp12 | |
LTE42005SContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent |
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lte42005sot440a | |
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
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500ma240mwfy51 h 120cbd124+8 | |