TRANSISTOR 3J Search Results

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

DTC323TK

Contextual Info: DTC323TK Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • • package marking: DTC323TK; H02 in addition to standard features of digital transistor, this transistor has: — low collector saturation voltage,

TRANSISTOR SMD MARKING CODE 3f

Abstract: transistor smd marking code 3l SMD TRANSISTOR MARKING 3B 3F smd transistor TRANSISTOR SMD MARKING CODE 3K smd transistor 3f smd transistor 3g TRANSISTOR SMD MARKING CODE 3G smd transistor 3K transistor smd 3E
Contextual Info: SMD General Purpose Transistor PNP BC856/BC857/BC858 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE ]> bb53^3J 0 0 3 m i 7 251 « A P X Product Specification Philips Semiconductors BUK856-800A Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a

acrian RF POWER TRANSISTOR

Abstract: Acrian s 46120 BVces Scans-00115701
Contextual Info: 0182998 ACRIAN INC dFJ T~~ 3Jt~s/ 0DP1531 1 46120 GENERAL DESCRIPTION 20 WATTS - 28 VOLTS 1000 MHz The 46120 is a stable common emitter transistor capable of providing 20 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed

Contextual Info: s tim m m an A M P com pany Radar Pulsed Power Transistor, 100W, 3jis Pulse, 30% Duty 1 .1 -1.3 GHz PH1113-100 V2.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geom etry

3Kp Transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BCV62 PNP general purpose double transistor Product specification File under Discrete Semiconductors, SC04 1997 Jun 18 Philips Semiconductors Product specification PNP general purpose double transistor

NEX2301

Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
Contextual Info: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad­ vanced Stepped Electrode Transistor SET structure with

Contextual Info: 2SD2385 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 140V (Min.) Complementary to 2SB1556 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE i- 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BCV61

Abstract: BCV62 BCV62A BCV62B BCV62C
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES BCV62 PINNING

3Kp Transistor

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP8N50E GENERAL DESCRIPTION PHX5N50E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

Contextual Info: HN3G01J TOSHIBA TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR H N ^ m i HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. MAXIMUM RATINGS Ta = 25°C

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS , motor control,

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

d 998 transistor circuit

Contextual Info: Philips Semiconductors Product specification T renchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

Response AA0482

Abstract: 49/Response AA0482
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this

2SC3569

Contextual Info: NPN SILICON POWER TRANSISTOR 2SC3569 DESCRIPTION The 2SC3569 is NPN silicon epitaxial transistor designed for switching regulator, DC-DC converter and high frequency power in millimeters inches amplifier application. FEATURES 10 .5 M AX. (0 .4 1 3 M A X.)

2SC3046

Abstract: transistor ITT
Contextual Info: January 1990 Edithn 1.1 FUjlTSU PRODUCT PROFILE 2SC3046 Silicon High Speed Power Transistor DESCRIPTION The 2SC3046 is a silicon NPN planar general purpose, high power switching tran­ sistor fabricated with Fujitsu's unique Ring Em itter Transistor {R E T technology.

BT816

Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Contextual Info: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

Helipot

Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
Contextual Info: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used