T143B Search Results

transistor ZA 22

Abstract: PNP TRANSISTOR marking pr BC 251 transistor BCV65
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV65 NPN/PNP general purpose transistor Product specification Supersedes data of 1997 Apr 22 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN/PNP general purpose transistor

2114 LC

Abstract: L381
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BCV63; BCV63B NPN general purpose double transistors Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN general purpose double transistors

Contextual Info: Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS70 series PINNING • L o w fo rw a rd c u rre n t DESCRIPTION • H igh b re a k d o w n v o lta g e SOT23 PIN • G u a rd ring p ro te c te d • S m a ll p la s tic S M D p a c k a g e

transistor KU 612

Abstract: transistor dk qe
Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BCV61 NPN general purpose double transistor 1997 Jun 16 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors

bfg67

Contextual Info: DISCRETE SEMICONDUCTORS BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 8 GHz wideband transistors

BFG590

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1995 Sep 19 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES PINNING • High pow er gain DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Preliminary specification Philips Semiconductors 1999 Feb 01 PHILIPS Philips Semiconductors Preliminary specification N-channel dual gate MOS-FETs FEATURES BF904A; BF904AR; BF904AWR

3Kp Transistor

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor

B1580

Abstract: 302b1 3-0107-B trumpeter twinax 3-02B3-B
Contextual Info: DASH NO -2 -4 -5 -B -7 -8 -9 •10 -11 -12 CONNECTOR TYPE ASSEMBLE PER MATERIAL,Æ 1 -0 1 5 6 -8 PL80 CJBO BJ89 BJ89F PLB03 CJ803 BJ893 BJB93F PL380 CJ380 BJ3B9 BJ3B9F 1-D152-B 3-0035-B 305-0039-8 3-010B-B 3-0111-8 3-02B3-B 3-0107-B 3-0103-8 3-021B-8 3-02B4-B

smd code marking LF sot23

Abstract: smd diode marking A3 sot23
Contextual Info: Philips Semiconductors Product specification Schottky barrier double diodes BAS40 series PINNING SOT23 (see Fig. 1a) FEATURES • Low forward voltage DESCRIPTION • Guard ring protected PIN BAS40 (see Fig. 1b) BAS40-04 (see Fig. 1c) BAS40-05 (see Fig. 1d)

BF904

Contextual Info: Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R and substrate interconnected and an internal bias circuit to ensure good cross-m odulation perform ance during AGC. FEATURES • S pecially designed fo r use at 5 V supply voltage

BFG67

Abstract: Y parameters of transistors transistor marking v12 ghz db 97-0310
Contextual Info: Philips Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR PINNING FEATURES • High power gain DESCRIPTION PIN • Low noise figure BFG67 • High transition frequency • Gold metallization ensures excellent reliability.

DIODE marking S4 69

Contextual Info: DISCRETE SEMICONDUCTORS BF1108; BF1108R Silicon RF-switches Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Silicon RF-switches BF1108; BF1108R FEATURES • S pecially designed fo r low loss R F-sw itching

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BCV61 NPN general purpose double transistor Product specification Supersedes data of 1997 Jun 16 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose double transistor

dual-gate

Abstract: rg168 str 1096 BF1101WR
Contextual Info: DISCRETE SEMICONDUCTORS BF1101 ; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR