| BF1101WR |
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NXP Semiconductors
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BF1101WR - N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 25 mS |
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Original |
PDF
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| BF1101WR |
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Philips Semiconductors
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N-Channel Dual-Gate MOS-FET |
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Original |
PDF
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| BF1101WR,115 |
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 25 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
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Original |
PDF
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| BF1101WR,115 |
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NXP Semiconductors
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BF1101 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
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Original |
PDF
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| BF1101WR,135 |
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 25 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
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Original |
PDF
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| BF1101WR,135 |
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NXP Semiconductors
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BF1101WR - N-channel dual-gate MOS-FETs, SOT343R Package, Standard Marking, Reel Pack, SMD, Large |
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Original |
PDF
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| BF1101WRT/R |
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NXP Semiconductors
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N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 25 mS |
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Original |
PDF
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| BF1101WRTR |
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Philips Semiconductors
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N-channel dual-gate MOS-FET |
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Original |
PDF
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