BF1101WR Search Results
BF1101WR Datasheets (8)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BF1101WR |
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BF1101WR - N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 25 mS | Original | 150.93KB | 15 | ||
| BF1101WR |
|
N-Channel Dual-Gate MOS-FET | Original | 134.8KB | 16 | ||
| BF1101WR,115 |
|
N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 25 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd | Original | 134.78KB | 16 | ||
| BF1101WR,115 |
|
BF1101 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal | Original | 150.93KB | 15 | ||
| BF1101WR,135 |
|
N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 25 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd | Original | 134.78KB | 16 | ||
| BF1101WR,135 |
|
BF1101WR - N-channel dual-gate MOS-FETs, SOT343R Package, Standard Marking, Reel Pack, SMD, Large | Original | 150.93KB | 15 | ||
| BF1101WRT/R |
|
N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 25 mS | Original | 134.78KB | 16 | ||
| BF1101WRTR |
|
N-channel dual-gate MOS-FET | Original | 134.8KB | 16 |
BF1101WR Price and Stock
NXP Semiconductors
NXP Semiconductors BF1101WR,115RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF1101WR,115 | 11,063 |
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Get Quote | |||||||
NXP Semiconductors BF1101WR,135Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF1101WR,135 | 7,610 |
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Get Quote | |||||||