TRANSISTOR 2SK68 Search Results

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

2sk1060

Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Contextual Info: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104

2SK681A

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98 .2 MOS FIELD EFFECT TRANSISTOR 2SK681A N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm

2SK680

Abstract: a006 transistor transistor A006 tc6106
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK680 FAST SW ITCHING N-CHANNEL SILICON POWER MOS FET FEATURES PACKAGE DIM ENSIONS • Suitable fo r switching power supplies, actuater controls, and in m illim e te rs pulse circuits 4.5 ± 0 .1

2SK686

Abstract: ODDS445 t37h
Contextual Info: SANYO SEMICONDUCTOR 15E D I CORP T-3^-|/ 2SK686 N-Channel M O S Silicon Field-Effect Transistor 2052A <£&m 7 cH7G7ti~ DODS441 High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute H a x l M Ratings at Ta=25°C

2SK687

Abstract: DDD3710
Contextual Info: SANYO SEMICONDUCTOR CORP ÍEE DI 7cH707ki □□□S44b S T - V M l 2SK687 N -Channel M O S Silicon Field-Effect Transistor 2052A 2464A High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute Maxim» Ratings at Ta=25°C

2SK680

Contextual Info: MOS FIELD EFFECT POWER TRANSISTOR 2SK680 FAST SW ITCHING N-CHANNEL SILICON POWER MOS FET FEATURES PACKAGE DIMENSIONS • Suitable fo r sw itching pow er supplies, actuater controls, and in m illim e te rs pulse circuits • L o w RoS onl • No second breakdown

2SK680A

Abstract: 5A 53
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK680A SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Not necessary to consider driving current because of its high input impeance. 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1

TC-7831B

Abstract: 2335A 2SK680A
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 S K 6 8 0 A N-CHANIMEL MOS FET FOR HIGH SPÈED SWITCHING The 2SK680A, N-channel vertical type MOS FET , is a switching PACKAGE DIMENSIONS Unit : mm device which can be driven directly by the output of ICs having a 5 V

2SK68

Abstract: 2SK681A ScansUX882
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SK681A N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK681A, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The MOS FET has excellent switching characteristics and is suitable

2SK68

Abstract: transistor 2sk68 2SK65 2sk68 a 2sk68 nec
Contextual Info: NEC N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR ELECTRON DEVICE D ESC R IPTIO N 2SK68 The 2SK68 is designed fo r use in driver stage o f A F am plifier. PACKAGE D IM EN SIO N S in m illim e te rs inches FEA TU R ES • High voltage, high |Yfs| and wide dynam ic range

2SK681

Abstract: 2SK681A TC-2336
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK681A N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING T he 2S K 6 8 1 A , N-channel vertical type M O S F E T , is a switching

q901

Abstract: TC-7832 2SK681 2SK6 2SK681A TC-2336 123456789 2sk68
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SK681A N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING T he 2S K 6 8 1 A , N-channel vertical type M O S F E T , is a switching PACKAGE DIM EN SIO N S Unit : mm device which can be driven directly by the o utp ut o f ICs having a 5 V

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997

Contextual Info: 6427525 N E C N E C ELECTRONICS INC 98 D E LE CTRONICS INC 18865 D T -Z S -ir g IbME7SES DDlflflbS S i^Ï-V B B fW B a s rg a a B g » ? -* MOS FIELD EFFECT POWER TRANSISTOR 2SK680 FAST SWITCHING N-CHANNEL SILICON POWER MOS FET F E A TU R ES PACKAG E D IM E N S IO N S

transistor jsx

Abstract: 2SK681 ipw fet s0822 t460 transistor
Contextual Info: ^ £ — 5 7 . 5 / — h M O S W * im . R $ b $ k '< t7 - Y :7 > ï ï * 9 M O S Field Effect Power Transistor 2SK681 MOS F E T 2SK 681Ü , N f - - v ^ . ; H i^ > 'f I7 - M 0 S t i i z «t i m ^c7 K 7 # x a 7 f > / FETT, f v q x ¥ i i : mm) 5 V'ffiiH*IC<7)

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

2SK680A

Abstract: TC-7831B
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 S K 6 8 0 A N-CHANIMEL MOS FET FOR HIGH SPÈED SWITCHING

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

2SK68A

Abstract: Transistor 2SK-68A
Contextual Info: SEC N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR ELECTRON DEVICE 2SK68A D E S C R IP T IO N T h e 2 S K 6 8 A is designed fo r use in d riv e r stage o f A F lo w noise P A C K A G E D IM E N S IO N S a m p lifie r. in m illim e te rs inches FEATURES • L o w IMoise F ig ure

SC-59

Abstract: 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84
Contextual Info: Road map Transistor Function/Application Signal MOS FET VDSS - ID(DC) MAP (4 V Gate-Driven Series) VDSS(V) 30 ID(DC)(A) 50 0.1 0.2 0.5 1.0 1.5 2.0 3.0 (RDS(on)MAX∗/Package) 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 2SK1582 (5.0 Ω / SC-59) 2SK679A

2SK680

Abstract: 2sk68 TRANSISTOR DG S-10 tc6106
Contextual Info: M O S Field Effect Power Transistor 2SK680Ü, N - f ?Wb|ÊÉ ^“'7 - M 0 S F E T T ', J : £ i f i f ê l i I ! j * r 5 T t b £ : x -i v - f > i , ^ 7 i t i t i 5 V t l# JC « ( ¥ f i 4 .5 ± 0 .1 X T 't„ f f if t - C V 'S f c t f ) , T : m m ) ?