2SK6 Search Results

2SK644

Abstract: t4y diode
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E TT-MOSll 2SK644 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low Drain-Source ON Resistance: RüS(ON)=0-7i2(Typ.)

2SK643

Contextual Info: 2SK643 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE TT-MOSn INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low D r a i n - S o u r c e ON R e sistance : R D S ( 0 N ) = 0-6£î(Typ.)

ic sony 0642

Abstract: sony 0642 2SK677 IC 0642 sony ke 931 0642 sony
Contextual Info: _ 2SK677H5 SONY» AIGaAs/GaAs Low Noise Microwave H EM T C H IP Description The 2 S K 6 7 7 H 5 is an A IG aA s/G aA s HEM T c h ip fa b ric a te d by M O CVD M e ta l O rganic C hem ical V a p o r D e p o sitio n . T his 0 .5 m icro n gate FET fe a tu re s very lo w n o ise fig u re and h ig h

k613

Abstract: 2SK013 2SK613 2SK613-3 sony IT 243 sony m-100
Contextual Info: Sony. 2SK613 Silicon N-Channel Junction FET U n it: mm P a cka g e O u tlin e D escrip tion M aking the best of Epitaxy and Pattern latest technology, 2 S K 6 13 accom plishes so far unattain­ able levels of performance. Usage with head am plifiers for video cam eras

bft sbs

Abstract: oloa+8888+LUBRICANT 2SK623 R20A
Contextual Info: blE D • 2SK623 MMTbEDS OQiailü ÖSb ■ H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 02 ■ FEATURES 1 G a ie [2.8 • • • • • 2 Low On-Resistance High Speed Switching Low Drive Current 0 3 No Secondary Breakdown

2SK680A

Abstract: 5A 53
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK680A SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Not necessary to consider driving current because of its high input impeance. 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1

yc 545

Abstract: 2SK678
Contextual Info: 2SK678 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E ^-MOSii INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in n DRIVE APPLICATIONS. 20.5 MAX. • Low Drain-Source ON Resistance

2SK0662

Abstract: 2SK662
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency and low-noise amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: Silicon MOS FETs Small Signal 2SK0620 (2SK620) Silicon N-Channel MOS FET unit: mm For switching 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 (0.65) ● High-speed switching ● Mini-type package, allowing downsizing of the sets and automatic

Contextual Info: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.75 max. • High-speed switching • Allowing to supply with the radial taping 15.6±0.5 • Features (0.8) (0.8) 3.0±0.2

2SK0601

Abstract: 2SK601
Contextual Info: Silicon MOSFETs Small Signal 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.04 Symbol Rating Unit Drain-source voltage VDS 80 V Gate-source voltage (Drain open)

Contextual Info: 2SK690 High Frequency FETs 2SK690 GaAs N-Channel MES Unit : mm For UHF medium-output power amplification 1.5±0.1 Downsizing of sets by mini power package and automatic insertion by magazine packing are available. 45˚ +0.1 1.0–0.2 0.4±0.08 +0.25 ● 0.1

transistor jsx

Abstract: 2SK681 ipw fet s0822 t460 transistor
Contextual Info: ^ £ — 5 7 . 5 / — h M O S W * im . R $ b $ k '< t7 - Y :7 > ï ï * 9 M O S Field Effect Power Transistor 2SK681 MOS F E T 2SK 681Ü , N f - - v ^ . ; H i^ > 'f I7 - M 0 S t i i z «t i m ^c7 K 7 # x a 7 f > / FETT, f v q x ¥ i i : mm) 5 V'ffiiH*IC<7)

diode sy 200

Contextual Info: »E|t,4E?SaS □□IflflTS 2 | E C ELECTRONICS INC 7 ^ 3 or N-CHANNEL M O S FIELD EFFECT POWER TRANSISTOR 2SK699 D E S C R IP T IO N The 2 SK 699 is N-Channel M OS Field Effect Power Tran ­ P A C K A G E D IM EN SIO N S sistor designed for solenoid, motor and lamp driver.

sony 0642

Contextual Info: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron

Contextual Info: 2SK676H5-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V) I(D) Max. (A)70m P(D) Max. (W) Maximum Operating Temp (øC) I(DSS) Min. (A)10m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665 (2SK665) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1

Contextual Info: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low ON resistance • High-speed switching • Allowing to be driven directly CMOS, TTL

2SK659

Abstract: 0118G xk30
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK659 The 2SK659 is N-Channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r solenoid, m o to r and lamp driver. In m illim eters inches FEATURES • 4 V Gate Drive — Logic level —

C947

Abstract: NF 022 NEC IEI-620 2SK680A T460 TC-7831A transistor NEC K 946
Contextual Info: Mos M O S Field E ffe c t T ran sis to r 2SK680A MOS F E T 2SK680A i, N ^ ^ / H IO ^ M O S iz x £ F E T T ', -y f> fs < , ^ < n K y # m m o j i à t i r ^ ò X ^ i ò , * (W 5 V ?1 3 U C Ì • mm Tto - ? , 7 ? 1.5 ±0.1 A tr o f à j - y f à t r Ì ' C t o

tc6105

Abstract: 2SK679 BH rn transistor 10285 TC-6105
Contextual Info: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8

2SK680

Abstract: a006 transistor transistor A006 tc6106
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK680 FAST SW ITCHING N-CHANNEL SILICON POWER MOS FET FEATURES PACKAGE DIM ENSIONS • Suitable fo r switching power supplies, actuater controls, and in m illim e te rs pulse circuits 4.5 ± 0 .1

s0246

Abstract: transistor et 454 TRANSISTOR BJ 131 transistor BJ 932 2SK681A T108 T210 T460 945-X bj 945
Contextual Info: MOS M O S Field E ffe c t T ran sis to r 2SK681A MOS F E T 2SK681A i , F E T T", 5 V m ^ I C c O ^ ^ j x 4 >y j - > w X X 't o b e mm i 1.2 7 .0 M A X p T r t c ^ ü if# T - t o 0 . 8 ± 0.1 i t o iS ^ - v iÊ iÆ 0 4 T - t 'o 0 . 6 + 0 .1 R DS(on)=0.7 Q (M A X .)