TRANSISTOR 2SA608 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

MJE2955

Abstract: 2N3645 bc557 BC307 BC212
Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer

2SA608N

Contextual Info: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ˙Capable of being used in the low frequency to

2SA608N

Contextual Info: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ˙Capable of being used in the low frequency to

2SA608N

Contextual Info: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ˙Capable of being used in the low frequency to

2SA608N

Contextual Info: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ․Capable of being used in the low frequency to

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA608S TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SA608

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage

2SA608S

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA608S TO-92S TRANSISTOR PNP FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 300 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage

2SA608N

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA608N TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -60

C536 NPN TRANSISTOR

Abstract: C536 transistor transistor C536 A608 transistor pnp transistor A608 2SA608N 2SC536NF-NPA-AT transistor npn C536
Contextual Info: Ordering number : EN6324B 2SA608N/2SC536N Bipolar Transistor http://onsemi.com – 50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA Applicaitons • Capable of being used in the low frequency to high frequency range Features • Large current capacity and wide ASO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA608N TRANSISTOR PNP 1. EMITTER FEATURES z Large Current Capacity and Wide ASO. 2. COLLECTOR 3. BASE APPLICATIONS z Capable of Being Used in The Low Frequency to High

2SA608S

Contextual Info: Transys Electronics L I M I T E D TO-92S Plastic-Encapsulated Transistors 2SA608S TO-92S TRANSISTOR PNP FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 300 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40

2sa608

Abstract: transistor 2sA608 2SA608F 2SA608G 2SA608e 2SA608-E 2SA608-F 2SA608 C k 1 transistor 2SA608 D
Contextual Info: 2SA608 -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO.

2SA608N

Abstract: 2SA608NF
Contextual Info: 2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Large current capacity and wide ASO. G H APPLICATIONS  Capable of being used in the low frequency to

2SA608

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V

2SA608S

Contextual Info: 2SA608S 2SA608S TO-92S TRANSISTOR PNP FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 300 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

2SA608N

Contextual Info: 2SA608N 2SA608N TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.15 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

2sa608

Abstract: transistor 2sa608 2SA608 D
Contextual Info: 2SA608 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃