TRANSISTOR 2A P Search Results

Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)

C5875

Abstract: 2SA2087 2SC5875
Contextual Info: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and

APE1707

Abstract: 24v to 5V 2A SW regulator APE1707-ADJ APE1707-12V marking codes transistors SSs APE1707-3 APE1707-5 APE1707X-XX B240A B340A
Contextual Info: Advanced Power Electronics Corp. Preliminary APE1707 150KHz, 2A PWM Buck DC/DC Converter GENERAL DESCRIPTION The APE1707 series are monolithic IC designed for a step-down DC/DC converter, and own the ability of driving a 2A load without additional transistor. It saves board

IN5817 schottky diode symbol

Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small

2SA1773

Abstract: 2SC4616 300V transistor npn 2a
Contextual Info: 2SA1773 / 2SC4616 Ordering number : EN3399D SANYO Semiconductors DATA SHEET 2SA1773 / 2SC4616 2SA1773 : PNP Epitaxial Planar Silicon Transistor 2SC4616 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • Large current capacity IC=2A .

Contextual Info: Ordering number:ENN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).

transistor on 4409

Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
Contextual Info: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).

ZXT12P40DX

Abstract: MO-187 TS16949 ZXT12P40DXTA ZXT12P40DXTC
Contextual Info: ZXT12P40DX SuperSOT4 DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 75m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

U2T405

Abstract: t605 U2T305
Contextual Info: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode NPN Darlingtons consist of a two transistor circuit on a single monolithic planar chip. High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A

SMD TRANSISTOR MARKING 2A pnp

Abstract: CMBT3906
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

BR 8050 D

Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

8550c

Abstract: BR 8550D 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D transistor 8550D PNP br 8550c NPN Transistor BR 8550 BR 8550 D
Contextual Info: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

2SC3807C

Contextual Info: 2SC3807C Ordering number : ENA0439 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.

BR 8550

Abstract: BR 8550 D BR 8550D 8550c 8550D he 8550d PNP 8550 8550 pnp transistor 8550D transistor br 8550 c
Contextual Info: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector

transistor Ic 1A datasheet

Abstract: transistor Ic 1A datasheet NPN 2SB857 2SD1133
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION •Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE sat = 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857

2SB1185

Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
Contextual Info: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

Contextual Info: ST PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capability ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙Supply line switching circuits ˙Battery management applications

Contextual Info: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 400 V VEBO 10 V 5(Pulse10) A IC Conditions Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30

STB1277

Abstract: Transistor TRANSISTOR stb1277 STD1862
Contextual Info: STB1277 Semiconductor PNP Silicon Transistor Description • Audio power amplifier • High current application Features • High current : IC=-2A • Complementary pair with STD1862 Ordering Information Type NO. Marking STB1277 STB1277 Package Code TO-92

KSB546

Abstract: KSD401 vertical tv deflexion KSD401 O
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD401 DESCRIPTION •Collector-Base Breakdown Voltage: V BR CBO= 200V(Min) ·Collector Current- IC= 2A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ ·Complement to Type KSB546

D612K

Abstract: D612 transistor B632K transistor b632k TRANSISTOR D612 D612 k 2SB632 D612 2SB632K d612k to126
Contextual Info: Ordering number:341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features Package Dimensions • High collector dissipation and wide ASO. unit:mm 2009B [2SB632, 632K/2SD612, 612K]

2SB1102

Abstract: 2SD1602
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1602 APPLICATIONS

darlington Ib 0.1A

Abstract: darlington transistor for audio power application 2SD1980 100V 2A MPT3 2SB1316 2SB1580 2SD1867 2SD2195 T100 DPT-100
Contextual Info: 2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor 100V, 2A 2SD2195 / 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316.

2SA1160

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2A Collector-base voltage