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    TRANSISTOR 2A P Search Results

    TRANSISTOR 2A P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR 2A P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CM2593 2A Step Down VOLTAGE REGULATOR GENERAL DESCRIPTION FEATURES The CM2593 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring a


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    CM2593 CM2593 PDF

    Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)


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    2SA2094 2SC5866 SC-96) R1102A PDF

    C5875

    Abstract: 2SA2087 2SC5875
    Contextual Info: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


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    2SC5875 200mV 2SA2087 65Max. C5875 C5875 2SA2087 2SC5875 PDF

    APE1707

    Abstract: 24v to 5V 2A SW regulator APE1707-ADJ APE1707-12V marking codes transistors SSs APE1707-3 APE1707-5 APE1707X-XX B240A B340A
    Contextual Info: Advanced Power Electronics Corp. Preliminary APE1707 150KHz, 2A PWM Buck DC/DC Converter GENERAL DESCRIPTION The APE1707 series are monolithic IC designed for a step-down DC/DC converter, and own the ability of driving a 2A load without additional transistor. It saves board


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    APE1707 150KHz, APE1707 1707M-XX 24v to 5V 2A SW regulator APE1707-ADJ APE1707-12V marking codes transistors SSs APE1707-3 APE1707-5 APE1707X-XX B240A B340A PDF

    IN5817 schottky diode symbol

    Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
    Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


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    TC120 600mA 300kHz TC120503EHA TC120 system420 D-81739 DS21365B-page IN5817 schottky diode symbol 1N5817 595D IN5817 MA737 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222 PDF

    2SA1773

    Abstract: 2SC4616 300V transistor npn 2a
    Contextual Info: 2SA1773 / 2SC4616 Ordering number : EN3399D SANYO Semiconductors DATA SHEET 2SA1773 / 2SC4616 2SA1773 : PNP Epitaxial Planar Silicon Transistor 2SC4616 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • Large current capacity IC=2A .


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    2SA1773 2SC4616 EN3399D 2SA1773 VCEO400V) 2SC4616 300V transistor npn 2a PDF

    Contextual Info: Ordering number:ENN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).


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    ENN3512B 2SA1786 2SC4646 2SA1786/2SC4646 2SA1786/2SC4646] PDF

    TEA2261

    Abstract: TEA2261 features TEA2260 tea2261 equivalent SMPS 9V power BZX85-3V0 transistor smps a1 BZX85 C27 1N4148 TEA5170
    Contextual Info: TEA2260 TEA2261 SWITCH MODE POWER SUPPLY CONTROLLER . . . . . . . POSITIVE AND NEGATIVE CURRENT UP TO 1.2A and – 2A LOW START-UP CURRENT DIRECT DRIVE OF THE POWER TRANSISTOR TWO LEVELS TRANSISTOR CURRENT LIMITATION DOUBLE PULSE SUPPRESSION SOFT-STARTING


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    TEA2260 TEA2261 TEA2260/61 TEA2261 TEA2261 features TEA2260 tea2261 equivalent SMPS 9V power BZX85-3V0 transistor smps a1 BZX85 C27 1N4148 TEA5170 PDF

    MMBT3904 jiangsu

    Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER


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    OT-23 MMBT3906 MMBT3904 MMBT3904 jiangsu MMBT3906 MMBT3906 SOT-23 PDF

    transistor on 4409

    Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
    Contextual Info: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).


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    EN4409 2SA1830/2SC4734 2SA1830 2SC4734 2SA1830/2SC4734 transistor on 4409 on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1 PDF

    ZXT12P40DX

    Abstract: MO-187 TS16949 ZXT12P40DXTA ZXT12P40DXTC
    Contextual Info: ZXT12P40DX SuperSOT4 DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 75m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


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    ZXT12P40DX ZXT12P40DX MO-187 TS16949 ZXT12P40DXTA ZXT12P40DXTC PDF

    U2T405

    Abstract: t605 U2T305
    Contextual Info: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode NPN Darlingtons consist of a two transistor circuit on a single monolithic planar chip. High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A


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    U2T301 U2T305 U2T401 U2T405 U2T305 U2T301 U2T401 U2T405 t605 PDF

    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
    Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    100mA NPN transistor 8050d BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor PDF

    npn smd 2a

    Abstract: smd transistor 2A smd 2a transistor 2SC4115 smd transistor 560
    Contextual Info: Transistors SMD Type Low Frequency Transistor 2SC4115 Features Low VCE sat :VCE(sat) = 0.2V (Typ.) IC / IB = 2A / 0.1A NPN silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage VCBO 40 V collector-emitter voltage


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    2SC4115 100MHz npn smd 2a smd transistor 2A smd 2a transistor 2SC4115 smd transistor 560 PDF

    SMD TRANSISTOR MARKING 2A pnp

    Abstract: CMBT3906
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    OT-23 CMBT3906 C-120 SMD TRANSISTOR MARKING 2A pnp CMBT3906 PDF

    BR 8050 D

    Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
    Contextual Info: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    100mA BR 8050 D NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d PDF

    8550c

    Abstract: BR 8550D 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D transistor 8550D PNP br 8550c NPN Transistor BR 8550 BR 8550 D
    Contextual Info: ST 8550 2A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


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    100mA 8550c BR 8550D 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D transistor 8550D PNP br 8550c NPN Transistor BR 8550 BR 8550 D PDF

    tea2261

    Abstract: TEA2260 china tv smps transformer BZX85 C27 tea2261 equivalent TEA5170 AN376 BA157 45W Audio amplifier MASTER-SLAVE SMPS FOR TV
    Contextual Info: TEA2261/0 SWITCH MODE POWER SUPPLY CONTROLLER Positive and Negative Current up to 1.2A and 2A • Low Start-Up Current ■ Direct Drive of the Power Transistor ■ Two Levels Transistor Current Limitation ■ Double Pulse Suppression ■ Soft-Starting ■ Under and Overvoltage Lock-out


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    TEA2261/0 TEA2260/61 tea2261 TEA2260 china tv smps transformer BZX85 C27 tea2261 equivalent TEA5170 AN376 BA157 45W Audio amplifier MASTER-SLAVE SMPS FOR TV PDF

    Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


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    ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA ZXTP03200BG A1103-04, 522-ZXTP03200BGTA ZXTP03200BGTA PDF

    PNP 200V 2A SOT89

    Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
    Contextual Info: ZXTP03200BZ 200V PNP Low VCE sat transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130mΩ PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state


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    ZXTP03200BZ -200V -160mV ZXTP03200BZTA D-81541 A1103-04, PNP 200V 2A SOT89 TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A PDF

    hr1a4a

    Contextual Info: DATA SHEET COMPOUND TRANSISTOR HR1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 2A high current drives such as IC outputs and actuators available • On-chip bias resistor • Low power consumption during drive


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    PDF

    2SA1585E

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)


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    WBFBP-03A 2SA1585E WBFBP-03A 2SA1585E PDF

    a0629

    Abstract: 2SC3807MP A0629-1 VEBO-15V IT11926
    Contextual Info: 2SC3807MP Ordering number : ENA0629 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807MP 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.


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    2SC3807MP ENA0629 VEBO15V) A0629-4/4 a0629 2SC3807MP A0629-1 VEBO-15V IT11926 PDF

    2SC3807C

    Contextual Info: 2SC3807C Ordering number : ENA0439 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.


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    2SC3807C ENA0439 VEBO17V) A0439-4/4 2SC3807C PDF