TRANSISTOR 2A P Search Results
TRANSISTOR 2A P Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
TRANSISTOR 2A P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CM2593 2A Step Down VOLTAGE REGULATOR GENERAL DESCRIPTION FEATURES The CM2593 is a monolithic integrated circuit that provide all the active functions for a step-down switching regulator, capable of driving a 2A load without additional transistor component. Requiring a |
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CM2593 CM2593 | |
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Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A) |
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2SA2094 2SC5866 SC-96) R1102A | |
C5875
Abstract: 2SA2087 2SC5875
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2SC5875 200mV 2SA2087 65Max. C5875 C5875 2SA2087 2SC5875 | |
APE1707
Abstract: 24v to 5V 2A SW regulator APE1707-ADJ APE1707-12V marking codes transistors SSs APE1707-3 APE1707-5 APE1707X-XX B240A B340A
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APE1707 150KHz, APE1707 1707M-XX 24v to 5V 2A SW regulator APE1707-ADJ APE1707-12V marking codes transistors SSs APE1707-3 APE1707-5 APE1707X-XX B240A B340A | |
IN5817 schottky diode symbol
Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
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TC120 600mA 300kHz TC120503EHA TC120 system420 D-81739 DS21365B-page IN5817 schottky diode symbol 1N5817 595D IN5817 MA737 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222 | |
2SA1773
Abstract: 2SC4616 300V transistor npn 2a
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2SA1773 2SC4616 EN3399D 2SA1773 VCEO400V) 2SC4616 300V transistor npn 2a | |
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Contextual Info: Ordering number:ENN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V). |
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ENN3512B 2SA1786 2SC4646 2SA1786/2SC4646 2SA1786/2SC4646] | |
TEA2261
Abstract: TEA2261 features TEA2260 tea2261 equivalent SMPS 9V power BZX85-3V0 transistor smps a1 BZX85 C27 1N4148 TEA5170
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TEA2260 TEA2261 TEA2260/61 TEA2261 TEA2261 features TEA2260 tea2261 equivalent SMPS 9V power BZX85-3V0 transistor smps a1 BZX85 C27 1N4148 TEA5170 | |
MMBT3904 jiangsu
Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
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OT-23 MMBT3906 MMBT3904 MMBT3904 jiangsu MMBT3906 MMBT3906 SOT-23 | |
transistor on 4409
Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
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EN4409 2SA1830/2SC4734 2SA1830 2SC4734 2SA1830/2SC4734 transistor on 4409 on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1 | |
ZXT12P40DX
Abstract: MO-187 TS16949 ZXT12P40DXTA ZXT12P40DXTC
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ZXT12P40DX ZXT12P40DX MO-187 TS16949 ZXT12P40DXTA ZXT12P40DXTC | |
U2T405
Abstract: t605 U2T305
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U2T301 U2T305 U2T401 U2T405 U2T305 U2T301 U2T401 U2T405 t605 | |
NPN transistor 8050d
Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
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100mA NPN transistor 8050d BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor | |
npn smd 2a
Abstract: smd transistor 2A smd 2a transistor 2SC4115 smd transistor 560
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2SC4115 100MHz npn smd 2a smd transistor 2A smd 2a transistor 2SC4115 smd transistor 560 | |
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SMD TRANSISTOR MARKING 2A pnp
Abstract: CMBT3906
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OT-23 CMBT3906 C-120 SMD TRANSISTOR MARKING 2A pnp CMBT3906 | |
BR 8050 D
Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
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100mA BR 8050 D NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d | |
8550c
Abstract: BR 8550D 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D transistor 8550D PNP br 8550c NPN Transistor BR 8550 BR 8550 D
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100mA 8550c BR 8550D 8550D transistor br 8550 NPN Transistor 8550D transistor 8550D transistor 8550D PNP br 8550c NPN Transistor BR 8550 BR 8550 D | |
tea2261
Abstract: TEA2260 china tv smps transformer BZX85 C27 tea2261 equivalent TEA5170 AN376 BA157 45W Audio amplifier MASTER-SLAVE SMPS FOR TV
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TEA2261/0 TEA2260/61 tea2261 TEA2260 china tv smps transformer BZX85 C27 tea2261 equivalent TEA5170 AN376 BA157 45W Audio amplifier MASTER-SLAVE SMPS FOR TV | |
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Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state |
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ZXTP03200BG OT223 -200V -160mV OT223 ZXTP03200BGTA ZXTP03200BG A1103-04, 522-ZXTP03200BGTA ZXTP03200BGTA | |
PNP 200V 2A SOT89
Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
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ZXTP03200BZ -200V -160mV ZXTP03200BZTA D-81541 A1103-04, PNP 200V 2A SOT89 TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A | |
hr1a4aContextual Info: DATA SHEET COMPOUND TRANSISTOR HR1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 2A high current drives such as IC outputs and actuators available • On-chip bias resistor • Low power consumption during drive |
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2SA1585EContextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A) |
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WBFBP-03A 2SA1585E WBFBP-03A 2SA1585E | |
a0629
Abstract: 2SC3807MP A0629-1 VEBO-15V IT11926
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2SC3807MP ENA0629 VEBO15V) A0629-4/4 a0629 2SC3807MP A0629-1 VEBO-15V IT11926 | |
2SC3807CContextual Info: 2SC3807C Ordering number : ENA0439 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers. |
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2SC3807C ENA0439 VEBO17V) A0439-4/4 2SC3807C | |