TRANSISTOR 200W Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

Contextual Info: MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

125OC

Abstract: MMBT3904 MMBT3906
Contextual Info: MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

200w transistor amplifier circuit

Abstract: MMBT2222A MPS2222A mps2222a transistor pin configuration transistor mps2222a
Contextual Info: ADVANCED INFORMATION MPS2222A SMALL SIGNAL TRANSISTORS NPN TO-92 FEATURES 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ On special request, this transistor is

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

TO63 package

Abstract: NTE71
Contextual Info: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

nte328

Abstract: 25A12
Contextual Info: NTE328 Silicon NPN Transistor Power Amp, Switch Description: The NTE328 i a silicon NPN transistor in a TO3 type package designed for use in industrial power amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage

200W PUSH-PULL

Abstract: BAL0102-150 200w Transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS BAL0102-150 Silicon NPN high power VHF transistor BAL0102-150 transistor assembly is designed for wideband push-pull power amplifiers required in AM or FM communication equipment (100-200 Mhz frequency range). Output Power:

marking code 1p

Abstract: MMBT2222A MPS2222A 10D4
Contextual Info: ADVANCED INFORMATION ADVANCED INFORMATION MMBT2222A SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) Top View ¨ This transistor is also available in the

transistor 2n4403 equivalent

Abstract: NPN switching transistor 2N4403 Transistor 2N4401 2N4401 2N4403 MMBT4403 200w transistor amplifier circuit 2n4401 configuration 2n4401 amplifier transistor 2n4401 equivalent
Contextual Info: ADVANCED INFORMATION ADVANCED INFORMATION 2N4403 SMALL SIGNAL TRANSISTORS PNP FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ¨ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the NPN transistor

NTE327

Abstract: transistor NTE327
Contextual Info: NTE327 Silicon NPN Transistor Power Amp, Switch Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain

PSMN040-200W

Contextual Info: Philips Semiconductors Objective specification TrenchMOS transistor FEATURES • • • • • PSMN040-200W SYMBOL QUICK REFERENCE DATA ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance Low thermal resistance

2SA495

Abstract: sk a 3050 c 2SC373 2SA495-Y 2SA495Y 2SC372 transistor 2sc373 transistor 2SC372 2sa495 toshiba 2SA495G
Contextual Info: SILICON PNP EPITAXIAL TRANSISTOR PCT 2SA PROCESS , ii ° High Frequency Amplifier ° High Speed Switching Applications 2SC372 2SC373 @ t ^ > T- ') * 's * a : fT = : VcE(sat) A -f y *S- -S Complementary INDUSTRIAL APPLICATIONS Applications = 200Wiz -0.2V (Typ.)

2sc2652

Abstract: 2-13B1A 200WPEP
Contextual Info: TOSHIBA 2SC2652 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.) Collector Efficiency

Contextual Info: DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power

Contextual Info: DU28200M RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power

Contextual Info: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

TH430

Abstract: SD1728 M177
Contextual Info: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and

MOSFET J140

Abstract: DU2820S 200w Transistor transistor 200w RF POWER MOSFET TRANSISTOR 100MHz
Contextual Info: DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power

PSMN040-200W

Abstract: PSMN040200W
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN040-200W SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 50 A

VK200-4B

Contextual Info: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation