25A12 Search Results

Contextual Info: MOTOROLA O rder this docum enti by M HPM 7A25A 120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 5 hp Motor Drives M H PM 7A 25A120B This device is not recommended for new designs (This device is replaced by MHPM7A25S120DC3)

2SA1285

Abstract: 2SC3245 2SA1285A 2SC3245A
Contextual Info: 25A1285, 2SA1285A y°' 7'ffl V m . i; □ > p n p x t 0^ ' > 7 )\*m m 2SA1285. 2 S A 1 2 8 5 A U . f â m M l t Ï Ï $ < D > V 3 > P N P J . b° ^ * ^ r h t: Ä 7 ^ X # - r '- r o <. h FE r \ C o b * T/j ' ^ £>1\ H i F i ^ 0l7 — r > 7 ° 7 Û|J K' ÿ A "7'lê,

Contextual Info: S-25A128B 125°C OPERATION SPI SERIAL E PROM FOR AUTOMOTIVE 2 www.sii-ic.com Rev.1.1_00 Seiko Instruments Inc., 2011 2 This IC is a SPI serial E PROM which operates under the high temperature, at high speed, with the wide range operation for automotive components. This IC has the capacity of 128 K-bit and the organization of 16384 words x 8-bit. Page write and

Contextual Info: S-25A128B 125°C OPERATION SPI SERIAL E PROM FOR AUTOMOTIVE 2 www.sii-ic.com Rev.1.2_00 Seiko Instruments Inc., 2011-2014 2 This IC is a SPI serial E PROM which operates under the high temperature, at high speed, with the wide range operation for automotive components. This IC has the capacity of 128 K-bit and the organization of 16384 words x 8-bit. Page write and

Contextual Info: S-25A128B 125°C OPERATION SPI SERIAL E PROM FOR AUTOMOTIVE 2 www.sii-ic.com Rev.1.1_00 Seiko Instruments Inc., 2011 2 This IC is a SPI serial E PROM which operates under the high temperature, at high speed, with the wide range operation for automotive components. This IC has the capacity of 128 K-bit and the organization of 16384 words x 8-bit. Page write and

micro switch 91929

Contextual Info: CATALOG LISTING M ICRO SWITCH FED. M FR. C 0 0 E < B E - SW ITCH-BASIC 2R V -A 4 91929 . 3801.030 I > oc OJ I UJ CD MAX .825 ±.030 Zy iq fZ 04 CD Iff REVISIONS KHI • F ¥ 3X 8-32 UNC .2 1 9 BINDING HEAD COMBINATION TERMINAL SCREW AND CUPWASHER- y

Contextual Info: C A r*L O S MICRO SWITCH FREEPOWT ILLINO IS. U S A A OF DIVISION SW ITCH-BAS IC HONEYWELL L IS T IN G B E -2 R -P 4 F E D . M FC« C O O C *t»2» ï I er CM i LU CD » Z c U II o 2 X 7 REVISIONS SMA 120 AUG T9\ R E IH S T WJM W MAN 82 TS5- Mm , WJM 123 JA N M

ir5040

Abstract: 2SC3143 100w amp sanyo pa 2030a A1257 SANYO SS 1001 2SA1257 103 7707 transistor s 2065 af
Contextual Info: SA NY O S E M I C O N D U C T O R CORP SSE D 7 cic]7D7b 0 D 0 7 Q 4 S T 2SA1257, 2SC3143 T -2 7-09 PN P/N PN Epitaxial Planar Silicon Transistors 2 0 1 8A High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications 1057B F e a tu re s • V ery sm all-sized package p erm ittin g the 2SA1257/2SC3143-applied sets to be m ade sm all and slim

10n120

Abstract: 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120
Contextual Info: MOTOROLA Order this document by MHPM6B10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp

HPM motor

Contextual Info: MOTOROLA O rder this docum ent by M HPM 6B10N 120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule M H PM 6B 10N 120 M H PM 6B 15N 120 M H PM 6B 25N 120 SERIES Integrated Power Stage for 460 VAC Motor Drives These E-POWER modules integrate a 3 -p h a se inverter in a

958b

Contextual Info: CATALOG MICRO SWITCH FREEPORT ILLIN O IS . U S A A OF D IVISIO N SWITCH-BASIC HONEYW ELL FED. MFG. CODE LISTING Y E -2 R B -A 4 91828 < i CD OC CM STAINLESS STEEL PLUNGER I UJ i > 1 .0 3 0 ± . 0 2 0 a OPERA1 INC POSITION u z * * Q .^ + .0 0 2 . '4 U _ a:

BE-1RV52-A4

Abstract: PH-4Q32
Contextual Info: C A TA L O G LISTING MICRO SWITCH FREEPORT IL L IN O IS . U S A A OF D IV IS IO N SWITCH - BASIC HONEYW ELL B E-1R V 52-A4 FED. M r s . COOC I I I U .3 8 0 ± -0 3 0 < 19 WIDE LEVER I CM in > 2= T LxJ 1.047 MAX .7 5 0 ± .0 3 0 .8 2 5 ± .0 3 0 GÛ OPERATING POSITION

BE-2R25-A4

Abstract: M221 2R25 25A-125
Contextual Info: CATALO G MICRO SWITCH FREEPORT ILLINOIS. U S A A OF DIVISION FED. M FG. B E-2R25-A4 SWITCH - BASIC HONEYWELL L IS T IN G CODE < i in CM c c CM I ÜJ CD Ziii f! * T a * LO R E V IS IO N S CO rjjtsy cT h C APR 76 t p t j— £¿58782 W JM 124 JAW 8 6 bo¿2B7-S

omron 8567

Abstract: crouzet 88 810.1 AQH2223 equivalent OMRON 1230 opto 12VDC sf 249 crouzet 88 810.0 Automation Controls panasonic - elevator door controller manual seiko lcd m3214 crouzet 88 810.0 coto reed relay 2063
Contextual Info: ELECTROMECHANICAL Switches Basic / Snap Switches Cherry Electrical Products . . . . . . . . . . 1819, 1820, 1821 Mountain Switch . . . . . . . . . . Available at mouser.com Honeywell . . . . . . . . . . . . . . . . . . 1822, 1823, 1824 Omron . . . . . . . . . . . . . 1825, 1826, 1827, 1829, 1830

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

63A23

Abstract: VECO Thermistor 63a34 63a38 68A7 61a26 62A50 33A62 31A78 32A224
Contextual Info: VICTORY ENGINEERING CORPORATION VICTORY ROAD, SPRINGFIELD, T W X : 7 1 0 -9 B 3 -< J4 3 Q NEW T E L 2CM • 3 7 9 - 3 9 0 0 JERSEY VECO HERMETICALLY SEALED BEAD-IN-GLASS PROBE AND BEAD-IN-GLASS ROD THERMISTORS erate to-high power sensitivity. They are ideally

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

15n120

Abstract: IC IGBT 15N120 10n120 25n120 IGBT DRIVER SCHEMATIC 25N120 igbt 10N120 motorola 422-9 IC IGBT 25N120 Q1/LT 9249 APPLICATION NOTE OF 15N120
Contextual Info: MOTOROLA Order this document by MHPM6B10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These E–POWER modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0

HDR20X2

Abstract: 5R14 43A16 CTL036 CONN10X2 4a20 27A14 MEMDATA23 PD153 20A7
Contextual Info: 8 7 6 5 4 3 2 1 VUSB VUSB_FP3 VIN V4P6 2 J3 VIN 1 U22 TPS79601 JUMPER5STAR D 2 3 2VIN VIN 1 JP9 JP10 1 3 +5.0V DC IN 4 5 4.66V VIN_CONN VOUT4 1EN FB2 D FB5 GND 3 TABGND 6 2 FERRITE_BEAD C16 15 PF R22 84.5K 1% PJ-102A 1 2 3 4 5 6 7 8 9 10 FROM MOTHER BOARD

Contextual Info: T CATALOG MICRO SWITCH FREEPORT ILLINOIS. U S A A OF DIVISION HONEYWELL LISTING Y E -2R V t98-A 41 SWITCH-BASIC F E D * M F C . C O D E 9 >82« ft 00 .156 O A PLUNGER G — > T CM CENTERLINE OF HOLE FOR SHAFT IS .052*.005 BELOW PLUNGER OPERATING POSITION

Contextual Info: TO SHIBA TD62M8603F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8603F 8CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M8603F is Multi Chip 1C incorporates 8 low saturation discrete 2SA1203 transistors. This IC is suitable for a battery use motor drive and LEE

GB13539

Abstract: GB*13539 ir p107s 7935 p101n RS4-1000 8505 scr 13x13 16x14 100KA
Contextual Info: Operator Interface Components 1-1 RS4RS8 Series Features and application 1.Working circumstance Altitude no more than 2000m. conditions to be discussed, if altitude more than 2000m Ambient temperature within-5℃~+40℃ Relative humidity no more than 50% at +40℃; no more than 90% at +25℃.