TRANSISTOR 1H Z Search Results

Contextual Info: ^ctdxy isStmi-Conchctoi ZPiotLata., Una. TELEPHONE: 873 376-2882 (212) 227-6008 FAX! (973) 378 0960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA 2N2483 NPN SILICON TRANSISTOR MECHANICAL DATA CASE: TERMINAL CONNECTIONS: JFflFC TO-1H Icnrt 1 Fmittnr l.o.irt 2 Unso

buz21

Abstract: transistor 643
Contextual Info: I • 71S1237 7 7 SG S-1H 0M S0N _ 3 0 E V # I , I QQ3D12S fa _ 6 S^THOMSON S BUZ21 CHIP [^D g^(Q [i[Lll ir^©iOgl _ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils

6V DC-AC Fluorescent lamp

Abstract: STP9N30
Contextual Info: f Z 7 Ä 7# S G S -1H 0 M S 0 N raD E[3 IILllCTI3 il(gl STP9N30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE STP9N30 • . . . . V dss RDS(on Id 300 V < 0.55 Í2 9 A TYPICAL RDS(on) = 0.4 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R  , ? >=1H- Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &   I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#

marking EB diode

Abstract: Q451 ee 19 8b qg
Contextual Info: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R  , ? >=1H, & Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &    I9 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# 0( J -&,

Contextual Info: TOSHIBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 Unit in mm OR MUTING AND SWITCHING APPLICATIONS • • • • High Emitter-Base Voltage : V e b q = 25V Min. High Reverse hpE : hp^ = 150(Typ.) (V q e = —2V, I q = —4mA) Low On Resistance : R q n = 1H (Typ.) (Iß = 5mA)

marking EB5

Abstract: diode marking eb5 marking G9
Contextual Info: IPD122N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H )*&* Y" -1 I 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D

schematic diagram UPS

Abstract: STU5NA90
Contextual Info: S G S -1H 0M S 0N [MOigœilLiera *® STU5NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE S TU 5N A90 V dss R dS oii Id 900 V < 2 .4 a. 5 A . TYPICAL RDs(on) =2.1 £1 . ± 30V GATE TO SOURCE VOLTAGE RATING . REPETITIVE AVALANCHE TESTED

B55Q

Contextual Info: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     )(&0 Y" 0+ I9 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#

marking 9D

Abstract: marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f
Contextual Info: IPA086N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H 0&. Y" I9 ,- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D

d5cd

Abstract: IPI024N06N3 G
Contextual Info: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 .( J *& Y" )*( 6

Contextual Info: IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     /&* Y" I9 )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#

IPB029N06N3G

Contextual Info: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC I9   .( J *&1 Y" *(

marking eb5

Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B
Contextual Info: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features 0 V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 R  , ? >=1H, & Q ( @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC J +&.   Y" ,- I9 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 

Q451

Abstract: 95B9 C19B marking EB5 d91d package marking 5f
Contextual Info: IPD180N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H-(    )0 Y" I ,+ 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D

Contextual Info: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# V 9H 0( J R ,?>=1H฀,&

Contextual Info: S G S -1H 0 M S 0 N [M O ig œ ilL ie ra *® S T Y 3 0 N A 50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE S TY30N A50 V dss R dS oii Id 500 V < 0.175 Û. 30 A Cl • TYPICAL RDS(on) =0.15 EFFICIENT AND RELIABLE MOUNTING

Contextual Info: IPD180N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀-( ฀ )0 Y I ฀ ,+ 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#

75D diode

Contextual Info: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 0( J 1&/ Y" /( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 

D1D5B

Abstract: B175D DIODE ED 99
Contextual Info: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 0( J .&/ Y" 0( 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 

IPI024N06N3 G

Contextual Info: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 Q฀ @D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC V 9H .( J R ,?>=1H฀,& *&

17N06L

Contextual Info: £ jï S G S -1H 0 M S 0 N ULKgraMOeS S T D 17N0 5 L S T D 17N0 6 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss RDS on Id STD17N05L 50 V < 0.0 8 5 Q. 17 A STD17N06L 60 V < 0.0 8 5 Q. 17 A • . . . . . . . TYPICAL RDS(on) = 0.065 £2

Contextual Info: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 Q฀ @D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC V 9H 0( J R ,?>=1H฀,& .&/ Y

Contextual Info: IPB065N15N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R ,?>=1H฀-( .&- Y I9 )+( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#