TRANSISTOR 1201 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications.  FEATURES * Complement to TIP41C

PNP transistor 263

Abstract: TIP42CG TIP41C TIP42C TIP42CL TIP42C-TA3-T TIP42C-TN3-R 5M80 to220 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP41C

PNP transistor 263

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP41C

f tip42c

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP41C

PNP transistor 263

Abstract: tip41c tip42c TIP42CL TIP42CL-TN3-T f tip42c TIP41C TIP42C TIP42C-TA3-T TIP42C-TN3-R TIP42C-TN3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP41C

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effeet power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SC3835

Abstract: humidifier circuit switch NPN TC4125
Contextual Info: UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL RATING UNIT Collector-Base Voltage

2SC3835

Contextual Info: UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL RATING UNIT Collector-Base Voltage

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: Philips Semiconductors bbS3131 003314*1 3*1*1 M A P X Product specilication NPN 2 GHz wideband transistor 1 N Ar1ER PHILIPS/DISCRETE ^ DESCRIPTION BFW93 blE ]> PINNING NPN transistor in a plastic SOT37 envelope. PIN It is intended tor use in VHF and UHF applications, primarily

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: UNISONICTECHNOLOGIESCO., LTD TIP42C PNP PLANAR TRANSISTOR PN P EPI T AX I AL PLAN AR T RAN SI ST OR  DESCRI PT I ON The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications.  FEAT U RES

BFW93

Contextual Info: • btS3^31 003514^ 3 ^ Product specification IAPX NPN 2 GHz wideband transistor ^ BFW93 N AMER PHILIPS/DISCRETE DESCRIPTION blE B PINNING NPN transistor in a plastic SOT37 envelope. PIN It is intended for use in VH F and UHF applications, primarily wideband aerial amplifiers in the 40

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

2SK926

Abstract: 2sk92 25RIA VQC10
Contextual Info: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE D E S C R IP T IO N 2SK926 The 2 S K 926 is N-channel MOS Field Effect Power PACKAGE DIMENSIONS Transistor designed for switching power supplies., D C -D C in mil irrxtert (inches)

MJ12010

Abstract: MR91S
Contextual Info: MOTOROLA SC XSTRS/R F 15 E 0 | t>3b72SM 00 05 1 0 3 2 | # MOTOROLA • SEMICONDUCTOR MJ12010 TECHNICAL DATA 10 A M P E R E HORIZONTAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . specifically designed for use in C R T deflection circuits. • Collector-Emitter Voltage — V c E X “ 950 Volts

Contextual Info: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL 2 S A 1201 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1201) POWER AMPLIFIER APPLICATIONS • High Voltage • High Transition Frequency : f p = 120MHz (Typ.) • P(} = 1~2W (Mounted on Ceramic Substrate)

Contextual Info: KSR2201 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R e sisto r Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built In bias Resistor(R,=4.7KQ, R2=4.7KD) • Complement to KSR 1201 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)

pj47k

Abstract: pj 999 KSR1201 KSR2201
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2201 SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (Ri =4.7K£1, R2=4.7K£i) • C om plem ent to KSR 1201 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

C4722

Contextual Info: \ P P I i l \ l l II'll \ < l l ’ Compensation for Linear Regulators by k io r.in In the m ajority o f low drop and qu asi low d rop com posite N P N -P N P ) regulators, the pass device or the pass device driver, is a lateral PN P transistor. The lateral PN P transistor is inherently a Ion' frequ en cy c u to ff device w ith a poor transient response.

NR6020T4R7M

Abstract: R1245K003-TR R1245N NR6028T100M GRM32ER71A476 nr4018 Nippon capacitors NR4018T R1245N001 Taiyo 93-R 503
Contextual Info: R1245x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-269-120118 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output