TOSHIBA "ULTRA HIGH SPEED" DIODE Search Results

1N4607

Abstract: SC-40 TOSHIBA 1N4607
Contextual Info: TOSHIBA {DISCRET E/ OPT O} b? 9097250 TOSHIBA DISCRETE/OPTO 1N4607 - DDDTSTS □ "J , D rr.o'lS-*? 67C 09295 Silicon Epitaxial.-Planar Type Diode TENTATIVE Unit in nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.

TPCA 8005

Abstract: TOSHIBA 8005 transistor data transistor tpca 8005-h tpca-8005 TPCA8005-H
Contextual Info: TPCA8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCA8005-H TENTATIVE High Speed and High Efficiency DC-DC Converters Unit: mm Notebook PC Applications Portable Equipment Applications High speed switching •

Contextual Info: TPCA8004-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High Speed U-MOSIII TPCA8004-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Unit: mm Portable Equipment Applications 0.4±0.1 1.27 0.5±0.1 High speed switching

TPCA8003-H

Contextual Info: TPCA8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCA8003-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications High speed switching • Small gate charge: Qg = 25 nC (typ.)

BR 8014

Abstract: TPCA8014-H diode marking code YF
Contextual Info: TPCA8014-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TENTATIVE TPCA8014-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications High speed switching Small gate charge: Qsw = 7.4 nC (typ.)

100Note

Contextual Info: TPCA8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High Speed U-MOSIII TPCA8005-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Unit: mm Portable Equipment Applications 0.4±0.1 1.27 0.5±0.1 High speed switching

TPCM8001-H

Contextual Info: TENTATIVE + TPCM8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCM8001-H High Speed and High Efficiency DC-DC Converters Unit: mm 0.5 Notebook PC Applications Portable Equipment Applications 0.8 5 • High speed switching

1SS272

Contextual Info: TOSHIBA 1SS272 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 = 25°C CHARACTERISTIC Maximum Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms)

x300n

Abstract: 1SS387
Contextual Info: TOSHIBA 1SS387 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS387 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Low Forward Voltage : Vp 3 = 0.98V (Typ.) Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance

TOSHIBA 1N DIODE

Contextual Info: TOSHIBA 1SS200 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS2Q0 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. Low Forward Voltage : Vp 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance : C^ =2 .2pF' (Typ.)

Contextual Info: TOSHIBA l - b? {DISCRETE/OPTO} dFI^CHTESO 9Q97250 TOSHIBA DISCRETE/OPTO - ; - - 0QCH2ÖL, 1 |~ 67C 09266 -Silicon Epitaxial Planar Type _ Diode D7*03 »0^ 1 N91 6,1 N91 6A, 1N916B TENTATIVE Unit In nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.

1SS362

Contextual Info: TOSHIBA 1SS362 1 SS362 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vjn = 0.97V Typ. Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance

1s1588

Abstract: Diode 1S1588 1S1587 1S1536 1s85
Contextual Info: TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA ~ b7 Dlf| ^ 7 2 5 0 DISCRETE/OPTO _ 67C_09299_. 1S1585—1S1588 Silicon Epitaxial' Planar Type Diode ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES: Low Forward Voltage : Vf =1.0V (Max.) . Small Total Capacitance : Cx=2pF (Max.)

1SS190

Contextual Info: TOSHIBA 1SS190 TOSHIBA DIODE 1 SILICON EPITAXIAL PLANAR TYPE S S 1 9 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time SYMBOL VF(1)

Contextual Info: 1SS382 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS382 ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Composed of 2 independentdiodes. Low Forward Voitage : Vy 3 = 0.9 2V (TYP.) Fast Reverse Recovery Time ; trr = 1.6ns (TYP,)

Contextual Info: TPCA8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High Speed U-MOSIII TPCA8003-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Unit: mm 0.5±0.1 Portable Equipment Applications 0.05 M A 5 • High speed switching

8014h

Abstract: TPCA8014-H 8014-H
Contextual Info: TPCA8014-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8014-H High-Speed and High-Efficiency DC-DC Converters Notebook PC Applications Unit: mm 0.5±0.1 Portable Equipment Applications 0.05 M A 5 • High-speed switching

TPCA8003-H

Contextual Info: TPCA8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCA8003-H High Speed and High Efficiency DC-DC Converters Unit: mm Notebook PC Applications Portable Equipment Applications High speed switching • Small gate charge: Qg = 25 nC (typ.)

TPCA8011-H

Abstract: 8011h
Contextual Info: TPCA8011-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCA8011-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications • High speed switching • Small gate charge: Qsw = 11 nC (typ.)

8016-H

Abstract: TPCA8016-H TPCA8016-H - Toshiba Semiconductor - High-Speed and High-Efficiency DC-DC Converters Notebook PC TPCA 8016
Contextual Info: TPCA8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8016-H High-Speed and High-Efficiency DC-DC Converters Notebook PC Applications Unit: mm 0.5±0.1 Portable Equipment Applications 0.05 M A 5 • High-speed switching

1SS368

Contextual Info: TOSHIBA 1SS368 1 SS368 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION Vp 3 = 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.) 0.8 ±0.1 io 1 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Forward Voltage

Contextual Info: TOSHIBA HN1D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HNinniF ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + • Small Package • Low Forward Voltage • Fast Reverse RecoveryTime : • Small Total Capacitance 2 .8 + : Vp 3 = 0.92V (Typ.) 1. 6

Contextual Info: TPCA8014-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8014-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm 0.5±0.1 Portable Equipment Applications • High-speed switching

1SS360F

Contextual Info: 1SS360F TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS360F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS 1.6 ± 0.1 0.85 ±0.1 Small Package : 1608 Fiat Lead Excellent in Forward Current and Forward Voltage Characteristics VF 3 —0.92 V (Typ.)