1SS362 Search Results

Contextual Info: 1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications Unit: mm z Small package 0.22±0.05 z Fast reverse recovery time: trr = 1.6 ns typ. Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF 3 = 0.97 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.5 pF (typ.)

1SS362FV

Contextual Info: 1SS362FV 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS362FV 単位: mm せ ん 頭 せ ん 平 均 サ ジ 単位 VRM 85 V 電 圧 VR 80 V 頭 順 電 流 IFM 300* mA 整 流 電 流 IO 100* mA IFSM 1* A 電 ー 定格 逆 逆

961001EAA2

Contextual Info: 1SS362 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS362 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vp = 0.97V Typ. Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance

1ss362

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF = 0.97V typ. Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) Maximum Ratings (Ta = 25°C)

1SS362

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : VF = 0.97V typ. Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) Maximum Ratings (Ta = 25°C)

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

Contextual Info: 1SS362 SILICON EPITAXIAL PLANAR TYPE U nit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage F ast Reverse Recovery Time Small Total Capacitance i.6± M o.sto.i V f = 0.97V Typ. trr = 1.6ns (Typ.) CT = 0.5pF (Typ.)

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF = 0.97V typ. l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.5pF (typ.)

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF = 0.97V typ. z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.5pF (typ.)

1SS362

Contextual Info: TOSHIBA 1SS362 1 SS362 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vjn = 0.97V Typ. Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance

1SS362

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF = 0.97V typ. l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.5pF (typ.)

Contextual Info: TO SHIBA 1SS362 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS362 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • Sm all Package • Low Forward Voltage • Fast Reverse Recovery Time : tr r = 1.6ns Typ. • Sm all Total Capacitance : Vp = 0.97V (Typ.)

1SS362

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF 3 = 0.97 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.5 pF (typ.)

1SS362FV

Contextual Info: 1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications Unit: mm 0.22±0.05 z Small package z Fast reverse recovery time: trr = 1.6 ns typ. 0.8±0.05 Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current

SS362

Contextual Info: 1SS362 TOSHIBA 1 SS3 62 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • 1.6 ± 0.2 Small Package Low Forward Voltage : Vjr = 0.97V Typ. Fast Reverse RecoveryTime : tr r = i.6ns (Typ.) Small Total Capaçi tançç

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching