1SS382 Search Results

Contextual Info: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)

1SS382

Contextual Info: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm Small package Composed of 2 independent diodes. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)

1SS382

Contextual Info: TOSHIBA 1SS382 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS382 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION 2.1 ± 0.1 • • • • Small Package Composed of 2 independentdiodes. Low Forward Voltage : Vp 3 = 0.92V (TYP.) Fast Reverse Recovery Time : trr= 1.6ns (TYP.)

1SS382

Contextual Info: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)

1SS382

Contextual Info: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : Trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS382 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS382 ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Composed of 2 independentdiodes. Low Forward Voitage : Vy 3 = 0.9 2V (TYP.) Fast Reverse Recovery Time ; trr = 1.6ns (TYP,)

1SS382

Contextual Info: 1SS382 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS382 ○ 超高速スイッチング用 単位: mm z 4 端子超小型外囲器に独立したダイオードを 2 個搭載しており 超高密度実装に最適です。 z 順方向電圧が低い。

1SS382

Contextual Info: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : Trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: TO SHIBA 1SS382 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS382 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION 2.1 ± 0.1 • • • • j1. 25± Small Package Composed of 2 independentdiodes. Low Forward Voltage : Vp 3 = 0.92V (TYP.) Fast Reverse Recovery Time : trr= 1.6ns (TYP.)

Contextual Info: TO SHIBA 1SS382 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS382 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION 2.1 ± 0.1 • • • • j1. 25± Small Package Composed of 2 independentdiodes. Low Forward Voltage : Vp 3 = 0.92V (TYP.) Fast Reverse Recovery Time : trr= 1.6ns (TYP.)

Contextual Info: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : Trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm Small package Composed of 2 independent diodes. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード

HN4C06J

Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
Contextual Info: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2

CMG03

Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A

2fu smd transistor

Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DF2S3.6SC

Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

smd diode Lz zener

Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A