SS368 Search Results

1SS368

Contextual Info: TOSHIBA SS368 1 SS368 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION Vp 3 = 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.) 0.8 ±0.1 io 1 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Forward Voltage

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

Contextual Info: Si PIN Photodiodes with Lens Plastic Package Tyoe B o . •. ^ tern Package Photo S s n i n v lv y -y k 3 .8 x 4 .8 S 5573 ' C A ftd ftd tu ■ ■ Area ' s U p w it h le n s Ò 7.0 S 6436 3 2 0 to 1 0 0 0 800 0 46 3 2 0 to 1 0 6 0 920 0.53 960 0 56 TO ,vr>. i;.' Vi

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published