TO262 Search Results

16n50c3

Abstract: 16n50c3 equivalent SPB16N50C3 SPA16N50C3 SPI16N50C3 SPP16N50C3
Contextual Info: SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263-3-2

12N50C3

Abstract: SPA12N50C3 PG-TO220-3-31 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking
Contextual Info: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated

3P03L04

Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V

2N03L06

Abstract: s4089 SPB80N03S2L-06 SPI80N03S2L-06 SPP80N03S2L-06 OPTIMOS
Contextual Info: Preliminary data SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) P-TO262-3-1 VDS 30 RDS(on) max. SMD version 5.9 m
ID 80

11N60S5 equivalent

Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
Contextual Info: SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated

Contextual Info: Preliminary data IPI09N03LA IPP09N03LA,IPB09N03LA OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

3N0625

Abstract: ANPS071E IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 PG-TO263-3-2
Contextual Info: IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 24.8 ID 25 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

3N0607

Abstract: IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004
Contextual Info: IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 6.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

smd diode code F45

Abstract: ANPS071E IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 marking code D23 smd
Contextual Info: IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 15.4 ID 45 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

4N06L08

Abstract: 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140
Contextual Info: IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 7.9 mΩ ID 45 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

3N06L05

Abstract: smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23
Contextual Info: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

3N0403

Abstract: IPB80N04S3-03 PG-TO263-3-2 ANPS071E IPI80N04S3-03 IPP80N04S3-03 J3205
Contextual Info: IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.2 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

11N60CFD

Abstract: SPI11N60CFD SPP11N60CFD
Contextual Info: SPI11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 • Extreme dv/dt rated • High peak current capability

3N06L06

Abstract: IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2
Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

4N03L03

Abstract: 4N03L02 IPI80N03S4L-03 IPP80N03S4L-03 ANPS071E IPB80N03S4L-02 PG-TO263-3-2 C25 smd
Contextual Info: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified

2n03l03

Abstract: 2N03L SPB80N03S2L-03 ANPS071E SPI80N03S2L-03 SPP80N03S2L-03 INFINEON PART MARKING to263
Contextual Info: SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 2.8 mΩ ID 80 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2

08N80C3

Abstract: equivalent 08N80C3 Q67040-S4632 SPP08N80C3 transistor SPP08N80C3 SPA08N80C3 SPI08N80C3
Contextual Info: SPP08N80C3, SPI08N80C3 SPA08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 VDS 800 V RDS on 0.65 Ω ID 8 A P-TO262 P-TO220-3-1 • Extreme dv/dt rated

07n65c3

Abstract: PG-TO220-3 SPP07N65C3 SPA07N65C3 PG-TO262-3 PG-TO-220-3 SPI07N65C3 smd diode 46A
Contextual Info: SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3 V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated

TRANSISTOR 15n60c3

Contextual Info: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

Contextual Info: Preliminary data OptiMOSâ 2 Power-Transistor IPI05N03LA IPP05N03LA,IPB05N03LA Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

20N65C3

Abstract: 20N65 smd transistor code 621
Contextual Info: SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology V DS RDS on 650 V 0.19 Ω ID 20.7 A • Worldwide best R DS(on) in TO 220 • Ultra low gate charge PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1

20N65C3

Abstract: 20n65 SPP20N65C3 20N65C
Contextual Info: SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology V DS RDS on 650 V 0.19 Ω ID 20.7 A • Worldwide best R DS(on) in TO 220 • Ultra low gate charge PG-TO262-3 PG-TO220-3-31 PG-TO220-3-1

11n60c3

Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220

16N50C3

Contextual Info: SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-T220-3-31 PG-TO262 PG-TO220-3-1 • Extreme dv/dt rated