3N0607
Abstract: IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004
Contextual Info: IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 6.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1
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ipb80n06s3-07ipi80n06s3-07ipp80n06s3-07pg-to263-3-2+5pg-to262-3-1pg-to220-3-13n0607anps071ed100004
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3N0607
Abstract: ANPS071E IPD50N06S3-07 PG-TO252-3-11
Contextual Info: IPD50N06S3-07 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.9 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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3N0607
Abstract: ANPS071E IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code
Contextual Info: Target data sheet OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • AEC Q101 qualified • Low On-Resistance RDS on IPI80N06S3-07 IPP80N06S3-07,IPB80N06S3-07 Product Summary VDS 55 V RDS(on) max. SMD version 6.5 mΩ ID 80 A P- TO262 -3-1
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ipi80n06s3-07ipp80n06s3-07ipb80n06s3-073n0607+5bipp80n06s3-07anps071ediode 7387smd diode code 102ac4 09 smd marking code
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3N0607
Abstract: IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 PG-TO263-3-2 88065
Contextual Info: IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.5 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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ipb80n06s3-07ipi80n06s3-07ipp80n06s3-07pg-to263-3-2+6pg-to262-3-1pg-to220-3-1eia/jesd22-a114-bsp0000-880653n060788065
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