TO204AE* MOS Search Results

TO-204AE

Contextual Info: NATL N-Channel Power MOSFETs N-Channel Power MOSFETs Continued IRFP441 IRF442 IRF840 IRF841 IRF842 IRF843 2N6764 IRFP1S0 IRFP151 IRF152 2N6765 2N6766 IRF250 IRFP250 IRF251 - 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600

buz350 mosfet

Abstract: DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Clsa Max (V) Max JF) tr Max (s) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 IAFJ240 BUZ37 BUZ31 BUZ34

2N6763

Abstract: 2N6764 IRF150 IRF442 IRF443 IRF840 IRF841 IRF842 IRF843 IRFP441
Contextual Info: Material NATL This N-Channel Power MOSFETs N-Channel Power MOSFETs Continued 1600 350 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600 350 150 E4 4 0.25 0.85 4 60 1600 350 150 E4 2 4 0.25 1.1 4 60 1600 350 150 E4 4.8 2 4 0.25 1.1

IRF150

Abstract: MOSFET IRF150 12V 40A voltage regulators IRF152
Contextual Info: IRF150, IRF151, IRF152, IRF153 S E M I C O N D U C T O R 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

RFK25P10

Contextual Info: i., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Features Description • -25A,-100V and-80V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such

IRF150CF

Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152

2E12

Abstract: 2N7322D 2N7322H 2N7322R 86 diode
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK9150 D, R, H 2N7322D, 2N7322R 2N7322H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 26A, -100V, RDS(on) = 0.125Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

IRF140

Abstract: IRF141 IRF143 IRF142 to204ae IRF140 HARRIS IRF140 ir
Contextual Info: IRF140, IRF141, IRF142, IRF143 h a r r is SEM C0NDUCT0R 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Juiy 1998 Features Description • 28A and 25A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

AN7254

Abstract: AN7260 AN9321 AN9322 RFK70N06
Contextual Info: RFK70N06 S E M I C O N D U C T O R 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET June 1997 Features Description • 70A, 60V The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

Contextual Info: yw us FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040£i TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: w vys S Semiconductor FRK264D, FRK264R, FRK264H y y 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 34A, 250V, RDS on = 0.120S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma

SMD H24

Abstract: H24 SMD H-24
Contextual Info: International I 8 R Rectifier Government and Space Products to Part R DS on B V0SS N u m b er T { = 25°C (A) (V) Pd T f =100°C Total D o se Rating Rads (Si) (A) @ T c — 25°C W Fax on D e m an d Case Outline N um ber Key Radiation Hardened HEXFET Power MOSFETs

Contextual Info: y*Rg*s FRK260D, FRK260R, FRK260H 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 46A, 200V, RDS on = 0.070Q. TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

1E14

Abstract: 2E12 FRK9260D FRK9260H FRK9260R
Contextual Info: FRK9260D, FRK9260R, FRK9260H 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -200V, RDS on = 0.200Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRK9160D FRK9160H FRK9160R
Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRK160D FRK160H FRK160R
Contextual Info: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRK150D FRK150H FRK150R
Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: yw us FRK9260D, FRK9260R, FRK9260H 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -200V, RDS on = 0.200Q TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

RFK25P10

Abstract: RFH25P "Harris Corporation 1998" RFK* Relay RFH25P08 RFH25P10 RFK25P08 TB334 rfh25
Contextual Info: [ /Title RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10 /Subject (-25A, 100V, 80V, 0.150 Ohm, PChannel Power MOSFETs) /Author () /Keywords (25A, 100V a80V, 0.150 Ohm, PChannel Power MOSFETs) /Creator () /DOCIN FO pdfmark RFH25P08, RFH25P10, RFK25P08, RFK25P10

Contextual Info: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 500V, RDS on = 0.400S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

2E12

Abstract: 3E12 FRK460D FRK460H FRK460R
Contextual Info: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 500V, RDS on = 0.400Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

1E14

Abstract: 2E12 FRK264D FRK264H FRK264R
Contextual Info: FRK264D, FRK264R, FRK264H 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 34A, 250V, RDS on = 0.120Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current