TO 252 DIMENSIONS Search Results

To-252-5

Abstract: TO252-5
Contextual Info: Packaging Information Mechanical Dimensions TO-252-5 Rev. 1.4 Aug 2006 Unit: mm inch www.bcdsemi.com 1 Packaging Information TO-252-5 Rev. 1.4 Aug 2006 www.bcdsemi.com 2

6680

Abstract: FZ9935
Contextual Info: TO-252 Tape and Reel Data D-PAK TO-252 Packaging Configuration: Figure 1.0 Packaging Description: TO-252 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated

TO252

Abstract: TO-252
Contextual Info: Package Dimension TO252-5LD TO-252-5L PACKAGE OUTLINE DIMENSIONS HTC

TB304

Abstract: came
Contextual Info: Harris Semiconductor No. TB304 Harris Power February 1994 Advanced Power Package Construction Method Raises TO-252 Reliability To New Heights This technical backgrounder is intended to show how Harris redesigned the TO-252 surface-mount power package into

TRANSISTOR SMD CODE 15

Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
Contextual Info: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:

3543

Contextual Info: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

d1 marking code dpak transistor

Abstract: MJD32CT4
Contextual Info: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

300TYP

Abstract: CJ78M05 252-3L
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Encapsulate Three-terminal Voltage Regulator TO-252 CJ78M05 Three-terminal positive voltage regulator 1.INPUT 2. GND FEATURES 3. OUTPUT Maximum Output current IOM : 0.5 A １ ２ ３ Output voltage

MJD122

Contextual Info: DC COMPONENTS CO., LTD. R MJD122 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-252 DPAK Pinning .268(6.80) .252(6.40) 1 = Base

JESD22

Abstract: AEC-Q200 "16a marking" smd NON POLAR capacitor smd capacitor 476 10k 685 j 16a marking
Contextual Info: Type 252 M Series AEC-Q200 compliant Type 252 M series is specially designed to SMD, based on our technology of chip tantalum capacitors acquired over many years. This series is high-reliability capacitors developed for devices, such as automotive electric components, to be

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2 Plastic-Encapsulate Transistors 2SD1758 TO-252-2 TRANSISTOR（PNP） 1.BASE FEATURES Power dissipation PCM: 2W （Tamb=25℃） Collector current ICM: 2A Collector-base voltage V BR CBO: 40V Operating and storage junction temperature range

Contextual Info: ● TO-252 Power Dissipation Power dissipation data for the TO-252 is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition. 1. Measurement Condition Reference data

Linear Regulator sot-89-5

Abstract: APL5902 DIODE CBP Schottky Diode SOT-89 27BSC APL5901 STD-020C
Contextual Info: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features Built in Current Limit Protection Controlled Short Circuit Current : 200mA Fast Transient Response Short Setting Time SOT-89, SOT-89-5, SOT-223, SO-8 ,TO-252 and TO-252-5 Packages Lead Free Available RoHS Compliant

Matsua Electric Works LED

Contextual Info: VDE Greatly increase load current 2.5A . Load voltage is 60V. 6.4 .252 3.9 .154 8.8 .346 6.4 .252 3.6 .142 8.8 .346 HE PhotoMOS (AQV252G) FEATURES TYPICAL APPLICATIONS 1. Greatly increased load current in the same package size. 2. Greatly improved specs allow you to

to 252 footprint

Contextual Info: D-Pak TO-252 Footprint 7.0 (0.276) 7.0 (0.276) 1.5 (0.059) 1.5 (0.059) 2.5 2.3 (0.090) 2.3 (0.090) All dimensions in mm (inches) 6.9 (0.272)

AQV214

Abstract: AQV212 smd AQV212A
Contextual Info: Standard type Controls low-level input signals. Controls load voltage 60V to 600V. VDE TESTING (Reinforced type) GU PhotoMOS (AQV21❍, AQV214H) FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3 4 1. Controls low-level analog signals

AQV252G

Contextual Info: HE PhotoMOS AQV252G VDE Greatly increase load current (2.5A). Load voltage is 60V. 6.4 .252 3.9 .154 8.8 .346 6.4 .252 3.6 .142 8.8 .346 HE PhotoMOS (AQV252G) FEATURES TYPICAL APPLICATIONS 1. Greatly increased load current in the same package size. 2. Greatly improved specs allow you to

AQV214

Contextual Info: Standard type Controls low-level input signals. Controls load voltage 60V to 600V. VDE TESTING (Reinforced type) GU PhotoMOS (AQV21❍, AQV214H) FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3 4 1. Controls low-level analog signals

4BB1

Contextual Info: TO-252 2 LEAD SURFACE MOUNT JEDEC TO-252 PLASTIC PACKAGE FOR RECTIFIERS ONLY A E H1 INCHES A1 b2 SEATING PLANE D 1 L 2 b1 b L1 c e1 J1 TERM. 3 L3 0.265 (6.7) b3 MAX MIN MAX A 0.086 0.094 2.19 2.38 NOTES - A1 0.018 0.022 0.46 0.55 3, 4 b 0.028 0.032 0.72

AQW212

Abstract: AQW21 AQW212A AQW212AX AQW212AZ AQW214 AQW215 AQW215A AQW215AX AQW215AZ
Contextual Info: GU PhotoMOS AQW21❍ Compact DIP (2 Form A) 8-pin type. Controls load voltage 60V to 600V. FEATURES 6.4 .252 3.9 .154 9.78 .385 6.4 .252 3.6 .142 9.78 .385 mm inch 1 8 2 7 3 6 4 5 RoHS Directive compatibility information http://www.mew.co.jp/ac/e/environment/

Contextual Info: GU PhotoMOS AQY210HL TESTING Current Limit Function. DIP(1 Form A) 4-pin type. Reinforced insulation 5,000V type. GU PhotoMOS (AQY210HL) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 1. Current Limit Function To control an over current from flowing,

Contextual Info: GU PhotoMOS AQY210HL TESTING Current Limit Function. DIP(1 Form A) 4-pin type. Reinforced insulation 5,000V type. GU PhotoMOS (AQY210HL) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 1. Current Limit Function To control an over current from flowing,

Contextual Info: GU PhotoMOS AQY210HL TESTING Current Limit Function. DIP(1 Form A) 4-pin type. Reinforced insulation 5,000V type. GU PhotoMOS (AQY210HL) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 1. Current Limit Function To control an over current from flowing,

Contextual Info: SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 20A TO-252 RDS(ON) (mΩ) Max D 30 @VGS = 10V G 55 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)