TNT SOT Search Results

BUK437-500A

Abstract: BUK437-500B buk437 S1216
Contextual Info: Philips Components BUK437-500A BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

D676A

Abstract: BD675A BD676A BD677A BD678A BD679A BD680A
Contextual Info: Preliminary specification Philips Semiconductors BD676A/678A/680A Silicon Darlington power transistors 5bE D PHILIPS INTERNATIONAL DESCRIPTION QUICK REFERENCE DATA PNP epitaxial base transistors in a monolithic Darlington circuit in a TO-126 SOT32 plastic envelope

2SC3883

Abstract: 2N2250 S2000A 2N2222B 2N2244 STi-812 MRF239 2N2362 STI-801 2N2245
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812

philips transistors

Abstract: LT 438
Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION 5bE D • 711GöSti G D M E T l b ÖTE M P H I N T - 3 3 - n QUICK REFERENCE DATA SYMBOL PINNING - TO-126 SOT32 “ VcEO DESCRIPTION PARAMETER

BLF522

Abstract: URA417 4312 020 366 3909
Contextual Info: Philips Semiconductora Product specification UHF power MOS transistor BLF522 PHILIPS IN T E RN AT IO NA L FEATURES 7 1 3 ,0 fi2 b OOMaTMS STQ M P H I N PIN CONFIGURATION High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch

Contextual Info: ¿ 1.30 P21 S0 WP P20(SD,'CPj CENTER OF CONNECTER NOTES • I. MATERIAL: SEE TABLE p l a t in g : s e e t a b u 24. l£ i§ J|.;SD HHCJ (g ) day - month 4 _ RûHS COMPLIANT PRODUCT CLE'.IRICAL HARACTEfilSTlCï . CUFWEMT RATlMG.OS-A '.VU HSTANDING .'0LTAGE:5OOV - . C".

PCIB24W

Contextual Info: SK3692 SHEET i OF I REVISION ICÛH APP 19 T IT O 1 7 5 9 3 w DATE REV 4 -1 2 »1 N ! POTITRQNC IN D W R E P BELEyEB THE M M ON THIS □RAMflNS TD K ISL IM L C . SM CE THE TECHNICAL n raraiA T D N a bve n m e o f d-wrgc. t h e u s e r EMPLOTS SUCH INFORMATION AT HB OHN DISCRETIDN

rca 2n2147

Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer

PN2222A MOTOROLA

Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

2N2222B

Abstract: 2N2280 2N2307 BSY87 2SC696 Elcoma 2N2244 2N1564 2n2382 Delco
Contextual Info: LOW•POWER SILICON NPN Item Number Part Number Manufacturer >= 50 V, Cont'd 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A See See See See See See See See See See 10 15 20 25 30 35 40 2N758B BC142 2N1564 2N734 2N754 2N742 2N742A 2N560

transitron

Abstract: rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216

2n2224

Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272

bcy591x

Abstract: 2N6429A 2N2196 2N2147 2N2214 2N2161 2SC538A BCW66RG 2N2207 BC521
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

3SM diode

Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

BC352* CSR

Abstract: csr BC352 2N936 Emihus 2N828 MPS5143 Bc352 LOW-POWER SILICON PNP 2N850 transitron
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index

K438-1000A

Abstract: BUK438-1000A BUK438-1000B k4381
Contextual Info: 7=3 f - Æ Ph ilips C o m p o n e n ts Data sheet status Preliminary specification date o f issue March 1991 BUK438-1000A/B PowerMOS transistor SbE D PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a

2N907 PNP

Abstract: 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178

BUK437-600B

Abstract: BUK437-600A BUK437 TNT sot
Contextual Info: BUK437-600A BUK437-600B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode liekJ-eftect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK637-400A

Abstract: BUK637-400B
Contextual Info: Philips Components BUK637-400A BUK637-400B PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control

Contextual Info: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable

pir 500b

Contextual Info: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

Contextual Info: Philips Semiconductors b b 5 3 ^ 31 DDSTEm M il H A P X UHF power transistor BLV194 bTE D — — AUER PHILIPS/DISCRETE FEATURES • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.