TN0702 Search Results

Contextual Info: TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

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Abstract: TN0702N3-G
Contextual Info: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical)

Contextual Info: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical) Fast switching speeds Low on-resistance

Contextual Info: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► Low threshold - 1.6V max. High input impedance Low input capacitance - 130pF typical Fast switching speeds Low on-resistance guaranteed at VGS = 2, 3, and 5V

TN0702N3

Abstract: TN0702 TN0702ND
Contextual Info: TN0702 TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON ID(ON) VGS(th) Order Number / Package BVDGS (max) (min) (max) TO-92 DICE† 20V 1.3Ω 0.5A 1.0V TN0702N3 TN0702ND †MIL visual screening available

TN0702N3

Abstract: TN0702
Contextual Info: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) VGS(th) BVDGS (max) (min) (max) TO-92 20V 1.3Ω 0.5A 1.0V TN0702N3 Features Low Threshold DMOS Technology ❏ Low threshold — 1.0 volt max

Contextual Info: t ìi S u p e rte x TN07L m e . L o w T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information t b v dss/ R d S ON *D(ON) BVdgs (max) (min) VGSflh) (max) 20V i. 3 n 0.5A 1.0 V Order Number / Package TO-92 DICE* TN0702N3 TN0702ND

TN0702

Contextual Info: TN0702 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length1 Width1 Thickness mils Back Side Metal 65 50 11.0 ± 1.5 Au (mils) TN0702 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

TN0702

Contextual Info: Supertex inc. TN0702 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length1 Width1 Thickness mils Back Side Metal 65 50 11.0 ± 1.5 Au (mils) TN0702 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

TN0702

Abstract: TN0702N3 TN0702ND
Contextual Info: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON ID(ON) VGS(th) Order Number / Package BVDGS (max) (min) (max) TO-92 Die† 20V 1.3Ω 0.5A 1.0V TN0702N3 TN0702ND †MIL visual screening available Features

Contextual Info: TN0702 Low Threshold Supertexinc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS O N ' d (O n ) ^ G S (th ) BVdgs (max) (min) (max) TO-92 Diet 20V 1.3£2 0.5A 1.0V TN0702N3 TN0702ND +MIL visual screening available

Contextual Info: TN0702 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BVDSS / ^DS ON ^D(ON) ^G S(th) b v dgs (max) (min) (max) TO-92 20V 1.3ß 0.5A 1.0V TN0702N3 Features Low Threshold DMOS Technology

tn0702n3-g

Contextual Info: TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN0702N3

Abstract: TN0702
Contextual Info: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) VGS(th) BVDGS (max) (min) (max) TO-92 20V 1.3Ω 0.5A 1.0V TN0702N3 7 Features Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven

TN0702

Abstract: MARKING tn
Contextual Info: TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

TN2524

Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

pj 72 diode

Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
Contextual Info: Chapter S: Product Selector Guides Chapter Product Selector Guides 1. Hotswap Controller ICs/lnrush Current Limiters/Circuit Breaker IC s. 248 2. LED Driver IC s .

DN2540N5

Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
Contextual Info: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5

pj 89 diode

Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
Contextual Info: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­