TN010 Search Results

SiTN

Abstract: TN0106 TN0106N3-G TN1506NW VF15
Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

Contextual Info: TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† 40V 1.8Ω 1.6V 2.0A TN0104N3 — TN0104ND 40V 2.0Ω 1.6V 2.0A —

Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN1L

Contextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

TN0106

Abstract: TN0106N3-G
Contextual Info: TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN0104N2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)1.25 @Temp (øC)150õ IDM Max (@25øC Amb)2.9 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)3.5# Minimum Operating Temp (øC)-55

Contextual Info: ^ Superte x inc. TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package b v dcs R ds on (m ax) (m in) VGS(th) (max) TO-39 TO-92 DICE* 60V 3ß 2A 1.6V TN0106N2 TN0106N3 TN0106ND 100V 3Q

Contextual Info: TELEDYNE COMPONENTS WÊ 5ÖE D ö cil7laGS QQQbm.'l 7 _ SD1137, TN0106 SEM ICO NDUCTO R _ TNOllO N-CHANNEL ENHANCEMENT-MODE r 27 ” ' D-MOS POWER FETS ORDERING INFORMATION T<£226AA TO-92 Pfastfc Packsfl« ported Chip* In Waffle Pack

Contextual Info: TN0102 TN0104 m i' m fa m m m m m tid r m m » . j im h m m jd h M n d h • t 1 I i I I N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) BVdgs (max) (max) (min) TO-39 TO-92 TO-243AA*

Contextual Info: ^ Supertex inc. TN0102 TN0104 Low Threshold Ordering Information BVjjss ! If N-Channel Enhancement-Mode Vertical DMOS FETs Order Number / Package b v dgs RDS ON (max) ^GS<th) (max) TO-39 TO-92 TO-243AA* 20V 1.8Q 1.6V 2.0A TN0102N2 TN0102N3 — TN0102ND 40V

TN0104

Contextual Info: Supertex inc. TN0104 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) TN0104 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

Contextual Info: TN0106N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

TN0106

Contextual Info: Supertex inc. TN0106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) TN0106 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS/ RDS ON ID(ON) VGS(TH) BVDGS (max) (min) (max) 60V 3.0Ω 2A 2.0V TN0106 TN0106N3 TN0106N3-G 100V 3.0Ω 2A 2.0V TN0110 TN0110N3 TN0110N3-G Package Options

TN1L

Abstract: tn1lw marking TN
Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN0106

Abstract: TN0106N3 TN0110 TN0110N3
Contextual Info: TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package 60V 3.0Ω 2A 2.0V TN0106N3 100V 3.0Ω 2A 2.0V TN0110N3 TO-92 Features Low Threshold DMOS Technology

TN0102N2

Abstract: TN0102N3 MOS 20V 0.5A P024 TN0102 TN0102ND TN0104 TN0104N2 TN0104N3 TN0104N8
Contextual Info: TN0102 TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-39 TO-92 TO-243AA* 20V 1.8Ω 1.6V 2.0A TN0102N2 TN0102N3 — TN0102ND 40V 1.8Ω

Contextual Info: TN0104N8 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)1.4 @Temp (øC)150õ IDM Max (@25øC Amb)2.9 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.6# Minimum Operating Temp (øC)-55

Contextual Info: TN0102N2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)1.25 @Temp (øC)25# IDM Max (@25øC Amb)2.9 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)3.5# Minimum Operating Temp (øC)-55

TN0102

Abstract: TN0102N3 TN0104N2
Contextual Info: TN0102 TN0104 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B V DSS/ R b v dgs 20V d S ON Order Number / Package V GS(th) Id (ON) (max) (max) (min) TO-39 TO-92 TO-243AA* 1.80 1.6V 2.0A TN0102N2 TN0102N3 —

TN0110N2

Contextual Info: _ TN0106 TN0110 _ Super tex inc. r . . . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BVpcs RpS ON (max) ' d(ON) (min) VgS(Mi ) (max) TO-39 TO-92 Diet 60V 3.on 2A 1.6V — TN0106N3 TN0106ND

TN0104

Contextual Info: TN0104 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) TN0104 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

TN0106

Contextual Info: TN0106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) TN0106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain