TMOS FET Search Results

irfd220

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD220 IRFD223 TMOS Field Effect Transistors Dual In-Line Package N-Channel Enhancement Mode Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline T TMOS TMOS FET TRANSISTORS

Contextual Info: NTB8N50 Preferred Device Product Preview TMOS 7 E-FET  Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com TMOS POWER FET 8 AMPERES 500 VOLTS RDS on = 0.75 Ω This advanced TMOS E–FET is designed to withstand high energy

NTB10N40

Abstract: NTB10N40T4
Contextual Info: NTB10N40 Preferred Device Product Preview TMOS 7 E-FET  Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com TMOS POWER FET 10 AMPERES 400 VOLTS RDS on = 0.5 Ω This advanced TMOS E–FET is designed to withstand high energy

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1-7 OHM MAX This TMOS medium power field effect transistor is designed for

Contextual Info: NTP10N40 Preferred Device Product Preview TMOS 7 E-FET  Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com TMOS POWER FET 10 AMPERES 400 VOLTS RDS on = 0.5 Ω This advanced TMOS E–FET is designed to withstand high energy

Contextual Info: NTP8N50 Preferred Device Product Preview TMOS 7 E-FET  Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com TMOS POWER FET 8 AMPERES 500 VOLTS RDS on = 0.75 Ω This advanced TMOS E–FET is designed to withstand high energy

MTH13N50

Abstract: 3N50 motorola MTH13N50 13N50 MTH15N40 MTH13N45 transistor 13n50 5N35 MTM4N35 DS3651
Contextual Info: P.O. BOX 20912 • PHOENIX, ARIZONA 85036 MTH13N45 MTH13N50 MTH15N35 MTH15N40 D esign er’s D ata Sheet 13 and 15 AMPERES N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FETs These TMOS Power FETs are designed for medium voltage,

MTP71040L

Abstract: AN569 pd 242
Contextual Info: MOTOROLA Order this document by MTP71040L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP71040L TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W This advanced TMOS E–FET is designed to withstand high

AN569

Abstract: IRF530
Contextual Info: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.16 W This advanced TMOS power FET is designed to withstand high

IRF540 motorola

Abstract: irf540 for pwm IRF540 application irf540 "27 MHz" IRF540 u c transistor irf540 27 MHz mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by IRF540/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF540 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.070 OHMS This advanced TMOS power FET is designed to withstand high

MTP55N06Z

Abstract: TMOS E-FET
Contextual Info: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 18 mΩ This advanced high voltage TMOS E–FET is designed to

TMOS E-FET

Abstract: MTP55N10EL
Contextual Info: MOTOROLA Order this document by MTP55N10EL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP55N10EL TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 100 VOLTS RDS on = 0.026 W This advanced TMOS E–FET is designed to withstand high

Contextual Info: MOTOROLA Order this document by MTP60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP60N10E7L TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W This advanced TMOS E–FET is designed to withstand high

AN569

Abstract: MTB29N15E SMD310 S 170 MOSFET TRANSISTOR
Contextual Info: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high

AN569

Abstract: IRF530
Contextual Info: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high

Contextual Info: MOTOROLA Order this document by MTP14N10E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP14N10E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.160 OHM This advanced TMOS E–FET is designed to withstand high

ultra low idss

Abstract: pd 242 AN569 MTP60N10E7L transistor 600 volts.50 amperes
Contextual Info: MOTOROLA Order this document by MTP60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP60N10E7L TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W This advanced TMOS E–FET is designed to withstand high

ad 152 transistor

Abstract: NT 407 F TRANSISTOR TO 220 NT 407 F MOSFET TRANSISTOR
Contextual Info: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1.7 OHM MAX This TMOS medium power field effect transistor is designed for

NT 407 F MOSFET TRANSISTOR

Abstract: AN569 MTP29N15E SMD310
Contextual Info: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP29N15E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0.07 OHM This advanced TMOS E–FET is designed to withstand high

irf540 for pwm

Abstract: IRF540 T1 IRF540 TMOS Power FET irf540 27 MHz IRF540 application irf540d motorola 304 TRANSISTOR mosfet IRF540
Contextual Info: MOTOROLA Order this document by IRF540/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF540 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 27 AMPERES 100 VOLTS RDS on = 0.077 OHMS This advanced TMOS power FET is designed to withstand high

motorola power FET

Abstract: MC33285 KL30 MOTOROLA SCR driver Zener Diode 7v
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC33285 Prototype Information Automotive Dual High Side TMOS Driver HIGH SIDE TMOS DRIVER The MC33285 is a dual high side TMOS driver designed for use in the harsh automotive switching applications. The purpose of the MC33285 is to drive two power n-channel FETs in

MTD1P50E

Contextual Info: MOTOROLA Order this document by MTD1P50E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTD1P50E TMOS E-FET. High Energy Power FET Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 Ω This advanced high voltage TMOS E–FET is designed to

Contextual Info: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 16 mΩ This advanced high voltage TMOS E–FET is designed to