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Contextual Info: MOTOROLA Order this document by MTP14N10E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP14N10E TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.160 OHM This advanced TMOS E–FET is designed to withstand high |
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MTP14N10E/D MTP14N10E MTP14N10E/D* |