TME 87 Search Results

Traco Power TEL 3 series

Abstract: traco tme TML-40 traco power txl TES-2N DIP-24 TEN5WI ac to dc converters adjustable to 48 vdc TMLM TEL5
Contextual Info: DC / DC CONVERTERS A C/ DC POWER SUPPLIES www.tracopower.com Product Portfolio 2009 DC / DC CONVERTERS TES-1 Series TMA/TME Series TMR-3 Series DC/DC Converters 1 to 2 W in SMD-Package NEW • • • • • Models with Single- and Dual-Output High Efficiency, 80 % typ.

Z311

Abstract: MGF7104
Contextual Info: MITSUBISHI D IS CR ET E SC blE ]> □ □ m cÎD2 TME • H I T S ^ Amitsubishi GaAs MMIC MGF7100 SERIES ELECTRONIC DEVICE GROUP 900MHz Band GaAs Power Amplifier IC DESCRIPTION PIN CONFIGURATION (TOP VIEW) MGF7100 Series are monolithic microwave integrated circuits for use in 900MHz band

TME 87

Abstract: DESIGN OF TRAFFIC JAM DETECTION IN JAVA TME 87 I CONTENT16 traffic light controller java program TME 87 i 3 traffic light controller with aver TME 86
Contextual Info: monitor TRAFFICMONITOR - VIDEO IMAGE PR0CESS/WG SYSTEMS FOR REAL TIME TRAFFIC DATA COLLECTION TrafficMonitor-E Operating Manual Version 1.0 J O I N T - S T O C K C O M P A N Y RESEARCH CENTRE 2 Module and NeuroMatrix® are registered trademarks of Research Center MODULE.

TME 57

Contextual Info: ^ E D I EDI8F16512C S12Kx16 SRAM Module ElECTUONC Œ SG N S N C .i 512KX16 Static RAM CMOS, Module Features 512Kx16bitCMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F16512LP • TTL Compatible Inputs and Outputs

3XXXS

Abstract: jsw marking Typ41 marking code JSW A15L A15R IDT70V9389 IDT70V9389L 017L
Contextual Info: A . /s ilk . 1 1 1 1 1 I W 0 WL |iB |B IB a F HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9389L Features: * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location

3XXXS

Abstract: Typ41 marking code JSW IDT70V9289 IDT70V9289L xsxx
Contextual Info: A . /s ilk |iB |B IB a F . 1 1 1 1 1 I W 0 WL HIGH-SPEED 3.3V 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9289L Features: * * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location

PSS-04-103

Abstract: saab space packet wire TME 87 PSS-04-151 P-ASIC-NOT-00122-SE PSS-04-106 K1784 TME 57 PSS-04-107 SAAB
Contextual Info: Saab Space AB Dokument ID Document ID Frisläppt datum Date Released Utgåva Issue Informationsklass Classification P-ASIC-NOT-00122-SE 2007-04-23 12 Company Restricted Sida Page 2 SUMMARY The SCTMTC ASIC User's Manual defines how the SCTMTC ASIC is to be used.

NCSL Z540.3

Abstract: E8363 N7832A E8356A E4436B network analyzer n3383a E6601A N7822A N7800A N4010A
Contextual Info: Agilent N7800A Calibration and Adjustment Software for Agilent RF/µW Instruments Agilent customers choosing to perform their own periodic maintenance performance verification and adjustments can now use the same automated software used in Agilent Service Centers.

K324

Abstract: 70A 1200V IGBTS
Contextual Info: Prelim inary Data Sheet OM120L60SB OMIOOF6OSB OM90L120SB OM70F120SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High C u r r e n t , Hi gh V ol ta g e 6 0 0 V A n d 1200V. Up To 150 A m p I G B T s W ith F R E D D i o d e s FEATURES Includes Internal FRED Diode

tme 126

Contextual Info: HB56UW272E-7B/8B 2,097,152-Word x 72-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8BYTE DIMM HITACHI Preliminary - Rev. 0.0 Feb. 02, 1996 Description The HB56UW272E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been

Contextual Info: OM6OL6OPB OM50F60PB Preliminary Data Sheet OM45L120PB OM35F12QPB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Cu rre nt, High Voltage 600V A n d 1200V, Up To 75 A m p Dual IGBTs With FRED Dio des FEATURES • • • • • • • Includes Internal FRED Diode

tme 126

Abstract: TME 87 I 24C026 s/ksmh12/2.27/30/24C0G
Contextual Info: HB56HW164DB-6B/7B 1,048,576-Word x 64-Bit High Density Dynamic RAM Module HITACHI Preliminary Rev 0.0 Apr. 18, 1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module S.O.DIMM , mounted 4 pieces of 16-Mbit DRAM (HM51W16165BTT) sealed in TSOP package and 1

Contextual Info: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s

221A49

Abstract: MGP7N60E OP77
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGP7N60E/D DATA - DesignerkTM Data Sheet w Insulated Gate Bipoflar Transistor N-Channel Enhancement-Mode MGP7N60E Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination

TME 87

Abstract: tme 126
Contextual Info: Features • • • • • • • • • • System-on-chip technology to handle all ground link communication Can be operated independently from a processor Re-definable by the use of different mission PROM Supports multiple sources of CPDU segments Packet wire or Space Wire control interface for all chip accesses

TME 87

Abstract: TME 87 0D
Contextual Info: ^EDI EDI8F3265C B*c1ronlc Dvtigm Inc." High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed from eight 64Kx4 Static R A M sinSO J packages on an epoxy

tme 126

Abstract: 64128C CZ 121 connector tme+126
Contextual Info: ^ED I EDI8F64128C EL£CTCOn C d c s g n s . n e l 128Kx64 SRAM Module 128KX64 Static RAM Highspeed CMOS Cache Module Features 1MByte Secondary C ache Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium B a se d System s

939 Processor Functional

Abstract: RT611 R924
Contextual Info: TABLE OF CONTENTS Paragraph Number Tit|e Page Number Section 1 Introduction 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 1.7 1.8 1.9 Features. MC68030 Extensions to the M68000 F a m ily.

TME 57

Contextual Info: ^EDI EDI8F16512C ELECTRONIC D£SIGHS. NC , '512Kx16 SRAM Module 512Kx16 Static RAM CMOS, Module Features The EDI8F16512C is a 8192K bit CMOS Static RAM based 512Kx16 bit CMOS Static on eight 128Kx8 Static RAMs mounted on a multi-layered Random Access Memory

MC68030

Abstract: tme 126 M68000 MC68020 MC68851 939 Processor Functional
Contextual Info: TABLE OF CONTENTS Paragraph Number Tit|e Page Number Section 1 Introduction 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 1.7 1.8 1.9 Features. MC68030 Extensions to the M68000 F a m ily.

2SC857

Abstract: 2SA536 2sc 865 RF transistor 2SC15-0 138B 2SA535
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TS8019

Abstract: PMC - NE 8 D TS-1529 PMC14 ts1030
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C e T e B b ie T p a H C $ o p M a T o p b i a h a M O H T a w a H a n a H e n b n e n a T H y ro m h m CeTeBue T paH c^opM aT op bi W M p o ro n n a T y n p M M e i-m ro T C fl b npo^eccM O H anbH O M

N60E

Abstract: MGW21N60ED MGW21 TME 86 T247
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW21N60ED/D DATA — Preliminary — lnsuiated Gate Bipolar Transistor Data Sheet MGW21 N60ED N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra-fast rectifier and uses an advanced

TME 87

Abstract: TME 87 I 46/SMC 5/TME 87 I TME 87 i 3
Contextual Info: EDI8F3265C ^ E D L 64Kx32 SRAM Module ELECTRONIC 06SIGN& MC. 64Kx32 Static RAM CMOS, High Speed Module F e a tu r e s 64Kx32 bit CMOS Static The EDI8F3265C is a high speed 2 megabit Static RAM Random Access Memory module organized as 64Kx32. This module is constructed