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    TL109 Search Results

    TL109 Datasheets (1)

    Inductor Supply
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TL1-09
    Inductor Supply Inductor: 436.3u: -12% to 20%: 3: Toroid Original PDF 23.51KB 1
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    Panduit Corp PLT3H-TL109

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    Panduit Corp PLT4H-TL109

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    Panduit Corp PLT2H-TL109

    Cable Accessories Weather Resistant Cable Tie Polypropylene Green Bulk - Bag (Alt: PLT2H-TL109)
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    Newark PLT2H-TL109 Pack 2
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    Lovato Electric Inc TL10992

    PLASTIC LIMIT SWITCH, OMNIDIRECTIONAL, WITHOUT RESET BUTTON, 1NO+1NC FLEXIBLE RO
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    Brady Worldwide Inc PTL-109-427

    SELF-LAMINATING VINYL WIRE LABELS, 4"H X 1.5"W, WHITE/TRANSLUCENT
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    RS PTL-109-427 Tape & Reel 3 Weeks 1
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    TL109 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UTC7805

    Abstract: tl1093
    Contextual Info: UNISONICTECHNOLOGIESCO., LTD TL1093 LINEAR INTEGRATED CIRCUIT PROGRAM M ABLE PRECI SI ON REFEREN CE ̈ DESCRI PT I ON The UTC TL1093 is a three-terminal adjustable regulator with a guaranteed thermal stability over applicable temperature ranges. The output voltage may be set to any value between VREF


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    tl1093100ma50ppm/qw-r103-045+1utc7805 PDF

    UTC7805

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TL1093 LINEAR INTEGRATED CIRCUIT PROGRAMMABLE PRECISION REFERENCE  DESCRIPTION The UTC TL1093 is a three-terminal adjustable regulator with a guaranteed thermal stability over applicable temperature ranges. The output voltage may be set to any value between VREF


    Original
    tl1093100ma50ppm/qw-r103-045+1utc7805 PDF

    UTC7805

    Abstract: tl1093
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TL1093 LINEAR INTEGRATED CIRCUIT PROGRAMMABLE PRECISION REFERENCE „ DESCRIPTION The UTC TL1093 is a three-terminal adjustable regulator with a guaranteed thermal stability over applicable temperature ranges. The output voltage may be set to any value between VREF


    Original
    tl1093100ma50ppm/qw-r103-045+1utc7805 PDF

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


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    ptfc260202fc10-watth-37248-4tl205+8tl2322ro4350tl233tl241587-1818-2-ndc201017 c202tl147 PDF

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


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    ptfb212507sh200-watth-34288g-4/2transistor tl131+8tl231tl127tl130tl131transistor tl1208c802tl-130lm78l05acmnd PDF

    TL1 series

    Abstract: TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07
    Contextual Info: TL1 Series Toroids C 1 F D 2 B A E 2E COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D .29 .325 .415 .475 .625


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    tl1-18tl1-19tl1-16tl1-17+11tl1-12tl1 seriestl112tl117tl119tl113tl1-01tl1-02tl1-03tl1-06tl1-07 PDF

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


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    ptfa220121m12-wattpg-son-10c102 transistor+8nfm18ps105r0j3tl111transistor c802tl204tl231c801tl-205atl113 PDF

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


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    ptfb182503elptfb182503fl240-watth-33288-6+10h-34288-6tl249tl2472tl244transistor tl131tl251tl239ptfb182503tl250tl242 PDF

    TL235

    Contextual Info: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency


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    ptva030121eah-36265-2tl235 PDF

    Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


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    ptfa091503el150-watth-33288-6 PDF

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


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    ptva035002evh-36275-4a03500250stances+4lm7805ach-ndtl174tl173ptva035002ev v1 PDF

    C109 ceramic capacitor

    Abstract: TL235
    Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


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    ptfb213208fvptfb213208sv320-watth-34275g-6/2+2c109 ceramic capacitortl235 PDF

    PTFB212507SH

    Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


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    ptfb212507sh200-watt PDF

    TRANSISTOR tl131

    Abstract: tl239
    Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


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    ptfb082817fhh-34288-4/2transistor tl131tl239 PDF

    PTFB090901EA

    Contextual Info: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


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    ptfb090901eaptfb090901fa90-watth-37265-2 PDF

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


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    ptma080304m20-leadpg-dso-20-63tl272+9tl184tl181tl271tl308tl187 transistortl274tl293tl193tl148 PDF

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


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    ptfb090901eaptfb090901fa90-watth-36265-2+9h-37265-2ptfb090901tl127569w100b4r7bw500xpcc104bctndpcc104bct-ndtransistor c104transistor c801 PDF

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


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    ptfb093608fvh-37275-6/2tl145tl245+3transistor c111c216tl152 PDF

    fet 4712

    Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT
    Contextual Info: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990


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    ptfb193404f340-watth-37275-6/2p03-a+9fet 4712nfm18ps105r0j30lm780l05acm-ndr8044712tl2032mp 1046tl10130805w220jt PDF

    TL225

    Abstract: ATC100A6R2CW150X
    Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


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    ptfa220121m12-wattpg-son-10tl225+1atc100a6r2cw150x PDF

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


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    ptfb182503elptfb182503fl240-watttransistor tl131+8ptfb192503tl134tl105btl231ptfb192503el v1c103 transistorro4350tl117 PDF

    TRANSISTOR tl131

    Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
    Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


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    ptfb212503elptfb212503fl240-watttransistor tl131+8tl134tl127tl234tl107tl117atc100b6r2tl227c103 transistor data PDF

    hy 1418

    Abstract: tl117 tl111
    Contextual Info: TL1 Series Toroids 1 C F E 2E 2 D A B COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D E TYPICAL .110 .150 .150


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    tl1-01tl1-02tl1-03tl1-04+9tl1-05tl1-06tl1-07tl1-08tl1-09tl1-10hy 1418tl117tl111 PDF

    PTFB090901EA

    Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original
    ptfb090901eaptfb090901fa90-watth-37265-2 PDF