equivalent transistor TIP3055
Abstract: BD4185 BDW59 BD139.10 equivalent transistor TIP2955 TIP2955 application note BD139.6 BD139.16 2n3055 replacement 2SC1237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP3055 PNP TIP2955 Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE sat = 1.1 Vdc (Max) @ IC = 4.0 Adc
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tip3055tip2955tip73btip74+16tip74atip74btip75tip75atip75btip75cequivalent transistor tip3055bd4185bdw59bd139.10equivalent transistor tip2955tip2955 application notebd139.6bd139.162n3055 replacement2sc1237
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tip1012
Abstract: 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mj150* darlington mJE2003
Contextual Info: ON Semiconductor Bipolar Power Transistors Bipolar Power Transistors Plastic Isolated TO-220 Type Pin: 1 Ñ Base, 2 Ñ Collector, 3 Ñ Emitter (Style 2, Case 221D-02) Mfr.Õs Type NPN MJF1222 MJF1272 MJF44H11 MJF45H11 2 MJF6388 MJF66682 1 Resistive Switching
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o-220221d-02340g-01mjf122+12mjf127mjl3281amj14002mj14003mj10021mjw16018tip10122n3055-3mj15024 mj150252n3055 mj15003mj150* darlingtonmje2003
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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do-15do-201ado-220act0202-3+12stgp3nb60hdstgp7nb60hdbzx85c12vtoshiba 2n3055bta41-600b applicationbta41-600b firing circuittab 429 h toshibabzx85c20vscr tyn612 pin configurationpicaxetyn612 specification2sa1085e
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IRF9634
Abstract: MJE13001 KT538A KT8296 KT829 KT940A kt8290 KT8270A MJE-13001 IRML2402
Contextual Info: DISCRETE SEMICONDUCTOR Transistors • Bipolar Transistors Part KT6136A KT6137A КТ607А-4 КТ607Б-4 КТ646А КТ646Б КТ646В KT660A KT660Б КТ805АМ КТ805БМ КТ805ВМ КТ805ИМ KT814A KT814Б KT814B KT814Г KT815A KT815Б KT815B KT815Г
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kt6136akt6137akt660akt660+15kt814akt814kt814bkt815akt815irf9634mje13001kt538akt8296kt829kt940akt8290kt8270amje-13001irml2402
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KT805M
Abstract: kt805bm KT872A KT837 KT837K KT818 KT805 KT837B KT837A KT610A
Contextual Info: ПОЛУПРОВОДНИКОВЫЕ ПРИБОРЫ Транзисторы •Биполярные транзисторы Обозначение Аналог КТ209А КТ209Б КТ209Б1 КТ209В КТ209В1 КТ209Г КТ209Д КТ209Е КТ209Ж КТ209И
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ksc16233102mkt805mkt805bm+8kt872akt837kt837kkt818kt805kt837bkt837akt610a
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2N2222A-PL
Abstract: 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 T p a H 3 M CTopbi N P N c o p T M p o B K a n o H a n p flw e H M r o Kofl: BFP520 BFG410W BFP405 BFP420 BFP450 BFP540 2SC5088 BFG235 BFR91A BF763 BFG540W BFG94 BFR90A BFR91 BFR92A BFR93A
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bfp520ot343rbfg410wbfp405+12bfp420bfp4502n2222a-pl2sc38832sc9018bf7592n3055-divss8050 smd2s-c38832sc945 smdsmd 2n3055bu415a
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BUX98PI
Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490
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2n30552n34392n34402n3771+162n37722n49232n50382n51532n51542n5191bux98pitip147tbu808dfi equivalent2n3055 to-2202n3055 to-218 packagefluorescent ballast mje13007tip3055 to-220st1803dhi equivalentbu508afi equivalentbu808dfi
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2N3773 NPN Audio Power AMP Transistor
Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
Contextual Info: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25
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ot-223o-225aao-126o-220ab+16o-220o-218o-247o-264o-204aao-204ae2n3773 npn audio power amp transistor2n5192 bd441mje15034mj150* darlingtontransistor mj15025transistor mj21194tip2955 application notemj31193mjl4281mje18006
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electronic ballast with MJE13003
Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light
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bud43btip73btip74tip74a+15tip74btip75tip75atip75btip75celectronic ballast with mje13003bu108application notes mje13005npn power darlington transistors high voltage high icm to-247mje13003 ballastmje24822sd6752sc1419bu326bu100
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BU108
Abstract: D45C electronic ballast with MJE13003 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 40 WATTS The BUL43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light
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bul43btip73btip74tip74a+12tip74btip75tip75atip75btip75cbu108d45celectronic ballast with mje13003npn power darlington transistors high voltage high icm to-247bdx54bu326bu100
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BU808DFH
Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416
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stx112stbv68stbv45stbv42+16stbv32stx13003bss44bfx342n51532n5681bu808dfhst2310dhibu808dfh equivalentbu808dfi equivalentbu808dfh bu808dfibux98apwbuv27bd911/bd912electronic ballast mje13007st1803dfh
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ST1803DFP
Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
Contextual Info: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D
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ot-32o-126bd433bd435+16mje521bd135bd437bd235bd4392n5191st1803dfpbux98pibu808dfi equivalentbuv48fielectronic balastst1803dhi equivalentst2001hisot93 packagebux48ast2310hi equivalent
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BU108
Abstract: 2SA101 electronic ballast with MJE13002 2sa135 BUS47P BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009 Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light
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mje/mjf18009tip73btip74tip74a+13tip74btip75tip75atip75btip75c2n6488bu1082sa101electronic ballast with mje130022sa135bus47pbu326bu100
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BUX98PI
Abstract: BUS08D T1P35C bux98p TP41A BUS08DFI BUF420AI Bo677A B0X54C BO677
Contextual Info: SELECTION GUIDE BY PACKAGE OPAK IPAK % DEVICE TYPE VcBO V ceO NPN PNP V MJD200T4 MJD3055T4 MJD31BT4 MJD44H11T4 STD909T4 IIJ m t2 T 4 MJD31CT4 «J012W 4 MJD47T4 MJ0340T4 MJD50T4 MJD210T4 MJD2955T4 MJD32BT4 MJ045H11T4 STD910T4 MJD32CT4 MJD127T4 MJD350T4 BULD118-1
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mjd200t4mjd3055t4mjd31bt4mjd44h11t4+16std909t4mjd31ct4j012wmjd47t4mj0340t4mjd50t4bux98pibus08dt1p35cbux98ptp41abus08dfibuf420aibo677ab0x54cbo677
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TRANSISTOR REPLACEMENT table for transistor
Abstract: POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
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mje13007mjf13007mje/mjf13007recogniz32+15tip73btip74tip74atip74btip75transistor replacement table for transistorpower transistor to-220 case se9402replacement for tip147transistor 2sa1046on semiconductor 2n5978tip41 transistor replacementbd863 transistormotorola transistor cross referencetransistor cross referencetransistor 2sc2366 to220
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BUL310P
Abstract: smps 100w half bridge BUW89 complementary BUR52 to-39 transistors BUTW92 bd707 application BU508DFI BUH315D BUH515
Contextual Info: TRANSISTORS POWER BIPOLAR HORIZONTAL DEFLECTION TYPICAL APPLICATION Device BU808DFI BUH315 BUH315D THD218DHI BU508AFI BU508DFI BUH515 BUH515D S2000AFI THD277HI BUH615D THD215HI THD200FI BUH1015HI BUH1015 BUH1215 BUH2M20AP VCEO VCBO IC Ptot V (V) (A) (W)
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bu808dfibuh315buh315dthd218dhi+13bu508afibu508dfibuh515buh515ds2000afithd277hibul310psmps 100w half bridgebuw89complementary bur52to-39 transistorsbutw92bd707 application
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2M3055
Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S Comple Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047
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2n30552n37152n37162n3771+162m37722n37912n37922n42342n43982n43992m3055b0w94cmje5202m588613007 hfmj 130082n5337iu 1047tip120 pnpbd908
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BUW52I
Abstract: BU808d STI-3007 STI3007 BU941ZP BDW91 STI3005 BUT72I BSS44 S2000A
Contextual Info: TRANSISTORS POWER BIPOLAR HORIZONTAL DEFLECTION VCEO VCBO IC Ptot Resistive Switching Typical application Package Type V BU808DFI* BUH315 BUH315D THD218DHI THD277HI BU508AFI BU508DFI S2000AFI THD219HI BU508A BU508D BU208A BU208D BUH615D THD215HI BUH1015HI
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bu808dfibuh315buh315dthd218dhi+16thd277hibu508afibu508dfis2000afithd219hibu508abuw52ibu808dsti-3007sti3007bu941zpbdw91sti3005but72ibss44s2000a
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fw26025
Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
Contextual Info: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250
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o-264hd1530jlhd1750jlo-220+16ot-223o-220fpot23-6lo-126o-220fhisowatt218fw26025fw26025afw26025a1 equivalentfw26025a1st5027st1802fxst2310fxmd1803dfxbul312fpbu808dfh
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power transistors cross reference
Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products
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mjw16212225aamje13003buh51+10power transistors cross referencemotorola an485transistor master replacement guidebuv18amotorola bipolar transistor guideelectronic ballast with mje13003mj150* darlingtonbuv488mje15033 replacementbd135 transistor replacement guide
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2N3055 plastic
Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art
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but11aftip73btip74tip74a+15tip74btip75tip75atip75btip75c2n3055 plasticbut11af equivalentbu108npn power darlington transistors high voltage high icm to-247bdx54dbdx54bux98a2sc140bu326bu100
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BU108
Abstract: BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •
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tip47tip50mjd47mjd50+9tip73btip74tip74atip74btip75tip75abu108bu326bu100
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tip122 tip127 audio amp
Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc
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tip120tip125tip121tip126+13tip122tip127220abtip122 tip127 audio amptip127 tip122 audio amplifier circuitbd226-bd227tip122 tip127 audio boardd45h1113904 transistorbu108tip120 darlingtontip41 amplifiertip121 texas
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MJL21194 equivalent
Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
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mjl21193mjl21194tip73btip74+14tip74atip74btip75tip75amjl21194 equivalentmjl21193 equivalentbux48a equivalent2n6107 equivalentbu108mj4502 pairbd140 npntransistor mjl211942n5981 pnp transistor2n3055 typical applications
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