TIP2955 AUDIO Search Results

TIP3055

Abstract: TIP2955 TIP3055 220 TIP2955 DATA tip2955 audio JESD97 value of tip3055 TIP-3055 packages to247 TO247 package dissipation
Contextual Info: TIP2955 TIP3055 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 3 2 Description 1 The devices are manufactured in epitaxial-base

tip3055

Abstract: TIP2955 morocco TIP3055 TIP3055 AS AN AMPLIFIER tip3055 - st TIP3055 220 TIP2955 DATA TIP2955 NPN power transistor JESD97 TIP3055 TO-220
Contextual Info: TIP2955 TIP3055 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 3 2 Description 1 The devices are manufactured in epitaxial-base

transistor TIP3055

Contextual Info: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.

SC-65

Abstract: TIP2955 TIP3055
Contextual Info: PNP TIP2955 PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! High Current Capability ! High Power Dissipation ! Complementary to TIP3055 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage

TIP3055

Abstract: TIP2955 TIP3055 220 st TIp3055 TIP2955 DATA tip3055 - st JESD97 TIP2955 - st
Contextual Info: TIP2955 TIP3055 Complementary power transistors Features • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 3 2 Description 1 The devices are manufactured in epitaxial-base

tip3055 equivalent

Abstract: TIP2955 NPN power transistor equivalent transistor TIP3055 transistor tip3055 SC-65 TIP2955 TIP3055 TIP3055 NPN power transistor
Contextual Info: NPN TIP3055 PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! High Current Capability ! High Power Dissipation ! Complementary to TIP2955 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage

TIP3055 Collector Peak Current

Abstract: 1U105 TIP2955 TIP3055 transistor TIP3055 transistor tip2955
Contextual Info: TIP2955 A _ SILICON POWER TRANSISTOR P-N-P epitaxial-base power transistor in a plastic SOT-93 envelope, fo r use in audio ou tput stages and general am plifier and switching applications. N-P-N complement is TIP3055. Q UICK REFERENCE D A T A Collector-base voltage open em itter

Contextual Info: TIP2955 _ A SILICON POWER TRANSISTOR P-N-P epitaxial-base power transistor in a plastic SOT-93 envelope, for use in audio output stages and general amplifier and switching applications. N-P-N complement is TIP3055. Q U IC K R E F E R E N C E D A T A

TR TIP3055

Abstract: power transistor tip3055 transistor TIP3055 TIP3055 TR TIP2955 TIP2955
Contextual Info: TIP3055 TPHILIPS INT ERN ATI ON AL 5bE D VllDöEb □D43b0fl T7D IPHIN SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope fo r use in audio o u tp u t stages and general am plifier and switching applications. P-N-P complement is TIP2955.

equivalent transistor TIP3055

Abstract: BD4185 BDW59 BD139.10 equivalent transistor TIP2955 TIP2955 application note BD139.6 BD139.16 2n3055 replacement 2SC1237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP3055 PNP TIP2955 Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE sat = 1.1 Vdc (Max) @ IC = 4.0 Adc

TIP2955

Abstract: TIP2955 NPN power transistor transistor PNP TIP2955 TIP3055 circuit use tip2955
Contextual Info: TIP2955 PHILIPS INTERNATIONAL SbE D • 711DflSt, 0 0 4 3 5 ^ 6 1T1 ■ 7 “- 3 3 PH IN ’ - Z 3 SILICON POWER TRANSISTOR P-N-P epitaxial-base power transistor in a plastic SO T-93 envelope, for use in audio output stages and general amplifier and switching applications. N-P-N complement is T IP 3 0 5 5 .

transistor c4467

Abstract: mosfet a1694 C4467
Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

BU108

Abstract: BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •

ST T4 3580

Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc

transistor MJE243 equivalent

Abstract: mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —

BU326

Abstract: BU108 transistor BU 110 BDX54 2SC1943 2SD80 MJ15021 "cross reference" MJE2482 2SD675 2N3055A 2n3055
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ15015, MJ15016 See 2N3055A Advance Information NPN MJ15018 Complementary Silicon Power Transistors MJ15020* PNP MJ15019 . . . designed for use as high frequency drivers in Audio Amplifiers. • High Gain Complementary Silicon Power Transistors

BU108

Abstract: 2SC7 BD 148 transistor Bd 458 2SC1419 BU326 BU100 2SC101
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

MJE4353 equivalent

Abstract: equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE4342 High-Voltage Ċ High Power Transistors MJE4343 PNP . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage —

MJ15015 TRANSISTOR REPLACEMENT GUIDE

Abstract: MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 2N3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power

2SC1831

Abstract: BUV18A mje15033 replacement 2SC1903 2N5037 SDT7605 SDT9202 IR-6060 2SC1517 2SA1046
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.

BU108

Abstract: BDW94 DTS801 MJE2482 2SC1419 BU326 BU100 2N3055/MJ802
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25–100 @ IC = 7.5 A

transistor 3569

Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —

Motorola case 77

Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc