TIP142 TRANSISTOR REPLACEMENT
Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V
|
Original
|
tip140tip145tip141tip146+16tip142tip147tip73btip74tip74atip74btip142 transistor replacementreplacement for tip147high end amplifier schematics 2n3055pin configuration npn transistor tip41cbdw51c schematicstip142 tip147bd262 darlington2n6022bu108transistor tip142
|
PDF
|
BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
|
Original
|
2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
|
PDF
|
BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
|
Original
|
do-15do-201ado-220act0202-3+12stgp3nb60hdstgp7nb60hdbzx85c12vtoshiba 2n3055bta41-600b applicationbta41-600b firing circuittab 429 h toshibabzx85c20vscr tyn612 pin configurationpicaxetyn612 specification2sa1085e
|
PDF
|
TIC106D equivalent
Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers
|
Original
|
o-220ot-932m/tsp0711tic106d equivalent+9tic106m scrbd249 equivalenttip41c equivalentbt137 equivalentreplacement tyn412tic225m equivalentmalaysia tic226dtic226d equivalenttic126m equivalent
|
PDF
|
TIC106M SCR
Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers
|
Original
|
o-220ot-932m/tsp0904tic106m scr+9tic106d equivalenttip41c equivalenttip42c equivalentbd242 transistor equivalenttransistor equivalent of bu406tip36c equivalentbtb06-600tic126d equivalenttic116d equivalent
|
PDF
|
mje15033 replacement
Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver
|
Original
|
2n30552n65762n65772n6578+15tip73btip74tip74atip74btip75mje15033 replacementbd262 darlington2sb554 replacement2sc1079 replacement2sd3232n6254 replacementbd262a darlingtonmj2955 replacement2sc1013 replacement2n3055 replacement
|
PDF
|
automotive ignition tip162
Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.
|
Original
|
bu323a204aatip73btip74+15tip74atip74btip75tip75atip75bautomotive ignition tip162bu323a equivalent2sa1046bc337 rbebu108tip102 darlington transistorbc337 cross-reference2sc190replacement transistor bc337bu326
|
PDF
|
ST T4 3580
Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc
|
Original
|
mjd243tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488st t4 3580bu108bdw93c applicationstransistor bd136 in dpak packaging2sc103ir411transistor bc 384bdx542sb56ic 714
|
PDF
|
2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
|
Original
|
mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
|
PDF
|
TRANSISTOR BC 384
Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required
|
Original
|
tip47e69369mjf47tip73b+14tip74tip74atip74btip75tip75atip75btransistor bc 384bu108bd139 equivalent transistor2n3055 equivalentrca1c03transistor bc 574bu326bu100
|
PDF
|
MJL21194 equivalent
Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
|
Original
|
mjl21193mjl21194tip73btip74+14tip74atip74btip75tip75amjl21194 equivalentmjl21193 equivalentbux48a equivalent2n6107 equivalentbu108mj4502 pairbd140 npntransistor mjl211942n5981 pnp transistor2n3055 typical applications
|
PDF
|
BU108
Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS
|
Original
|
2n51942n51952n51912n5192+14tip73btip74tip74atip74btip75tip75abu1082sa1046driver amplifier tip31 transistorbdx54mje51902sb56bu326bu100
|
PDF
|
automotive ignition tip162
Abstract: 2sc331 2N6556 BU108 2SA648 MJE13009 2SD1815 "cross reference" FT47 MJ1000 mj295
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.
|
Original
|
mj10012mjh10012tip73btip74+14tip74atip74btip75tip75aautomotive ignition tip1622sc3312n6556bu1082sa648mje130092sd1815 "cross referenceft47mj1000mj295
|
PDF
|
2SC1831
Abstract: BUV18A mje15033 replacement 2SC1903 2N5037 SDT7605 SDT9202 IR-6060 2SC1517 2SA1046
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.
|
Original
|
2n3442tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882sc1831buv18amje15033 replacement2sc19032n5037sdt7605sdt9202ir-60602sc15172sa1046
|
PDF
|
|
|
tip122 tip127 audio amp
Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc
|
Original
|
tip120tip125tip121tip126+13tip122tip127220abtip122 tip127 audio amptip127 tip122 audio amplifier circuitbd226-bd227tip122 tip127 audio boardd45h1113904 transistorbu108tip120 darlingtontip41 amplifiertip121 texas
|
PDF
|
MJE15020
Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment
|
Original
|
mje340tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488mje15020dts423mje15033 replacement2sc243bd388-52sc1826bd2632sc1903se93022sa698
|
PDF
|
2N5686 motorola
Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.
|
Original
|
2n56842n56852n5686tip73b+15tip74tip74atip74btip75tip75atip75b2n5686 motorola2n5685 equivalentbu108mj15024 mj15025audio amplifier 2n56862sa492sc140mj1000nsp2100
|
PDF
|
BDV65B equivalent
Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors
|
Original
|
bdv65bbdv64btip73btip74+15tip74atip74btip75tip75atip75btip75cbdv65b equivalentbuv48 equivalentbu108tip127 pin details2sd424bdx54bu326bu100mje340
|
PDF
|
2SA70
Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit
|
Original
|
2n63792n6274tip73btip74+15tip74atip74btip75tip75atip75b2sa70bu1082sa10462sc7c 3198 transistorbu806 complementbdx54tip142bu326bu100
|
PDF
|
transistor MJE243 equivalent
Abstract: mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —
|
Original
|
mje243mje253tip73btip74+11tip74atip74btransistor mje243 equivalentmje15033 replacementmje243 equivalent2n3055 plasticmje243 motorolabu108pnp transistor motorola mj2268bu326bu100
|
PDF
|
TIP41 TRANSISTOR REPLACEMENT
Abstract: TIP42 338 npn dpak BU326 TIP42 amplifier BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD41C* PNP MJD42C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • • SILICON
|
Original
|
mjd41cmjd42ctip41tip42+13tip73btip74tip74atip74btip75tip75atip41 transistor replacementtip42 338npn dpakbu326tip42 amplifierbu108bu100
|
PDF
|
MJE4353 equivalent
Abstract: equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE4342 High-Voltage Ċ High Power Transistors MJE4343 PNP . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage —
|
Original
|
mje4342mje4352mje4343mje4353+12tip73btip74mje4353 equivalentequivalent transistor k 3634to220 amps 1200 vbu108sdt9207 "cross referencebu100d45h11 cross referencecross reference bd8302sd1815 "cross reference2sd1815 cross reference
|
PDF
|
3904 Transistor
Abstract: BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741* MJE5742* NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications
|
Original
|
mje5740mje5741mje5742tip73b+15tip74tip74atip74btip75tip75a3904 transistorbu1082n2222 npn bipolar junctiondriver ignition coilignition coil driversignition controlnpn power darlington transistors coil driver to-2471n4933 equivalentbd135 transistor replacement guide2n2222 npn transistor footprint
|
PDF
|
MJ15015 TRANSISTOR REPLACEMENT GUIDE
Abstract: MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 2N3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power
|
Original
|
2n3055mj29552n3055amj15015+15mj2955amj15016tip73btip74tip74atip74bmj15015 transistor replacement guidemj15015 equivalentmj2955 replacement2n3055a 2n3055bu108tr bc 338mj15015 parts2sb752sc1051
|
PDF
|