TIP 102 TRANSISTOR Search Results

Contextual Info: SGS-THOMSON TIP 100/TIP 102 RfflDOlñ!<s [l[L[ie,ü’[KÍ@RDD S$ TIP105/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

TIP105

Abstract: TIP-106 TIP107 TIP106 transistor TIP105 NPN Transistor VCEO 80V 100V DARLINGTON
Contextual Info: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 00/101/102

TIP100

Abstract: TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor
Contextual Info: NPN EPITAXIAL TIP100/101 /102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107

Contextual Info: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 10 0 /1 01/102

Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107

TIP 102 transistor

Abstract: transistor tip 107 Transistor tip 102
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE=4V, lc = 3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS

tip 102

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE

tip 102

Abstract: Transistor tip 102
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V c e = 4 V , lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS

Tip 106

Abstract: TIP106
Contextual Info: SGS-THOMSON TIP100/TIP102 illSBTMIKgS TIPI 05/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES • COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL

bdx340

Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60

Tip 107 C

Abstract: transistor tip 107 e 616 E616 IP107 tip 105 tip 107
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE= —4V, lc = - 3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS

Bow94c

Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

MJE6045

Abstract: SE9302 texas instruments tip102 T0-22Q TIP101 TEXAS INSTRUMENTS TIP105 texas instruments tip100 transistor 1251 n-p-n 2N6388 TIP102
Contextual Info: bH TEXAS I N S T R -COPTO} 0D3bö7D □ 896-1726 TEXAS INSTR OPTO 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS JA N U A R Y 1 9 7 7 - R E V IS E D O C TO B E R 1 9 8 4 • Designed for Complementary Use with TIP105, TIP106, TIP107

T1P42C

Abstract: Power transistor TO-220 NPN 100 V, TIP 41C TIP 41c transistor T1P42A T1P42 TIP 42c transistor T1P-42C T1P49 t1p41 tlp42c
Contextual Info: SAMSUNG S E M I C O N O U G TOR INC 14E TIP42 SERIES D | 11142 0 0 0 7 7 2 2 - 7 | TIP42/42A/42B/42C PNP EXITAXIAL SILICON TRANSISTOR T - MEDIUM POWER LINEAR N SWITCHING APPLICATIONS 73- zj • Com plem ent to T1P41/41AV41B/41C ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Bow94c

Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

bow94c

Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

Contextual Info: TRANSISTORS FUNCTION GUIDE 2.2.3 TO-220 Type Transistors lc Device Type Condition A VcEO (V) 2 60 TIP110 TIP115 4 2 80 TIP111 TIP116 4 100 TIP112 TIP117 4 NPN PNP VcE (V) lc (A) Condition v CE(sat)(V) Condition Hfe fT(MHz) Pc (W) lc (A) Ib (A) V ce TYP MAX (V)

TIP 107

Abstract: transistor tip 107 transistor t0-220 TO 106 transistor base collector emitter
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE=1000 @ V e e r -4V, lc= -3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS

p100 220a

Abstract: transistor p105 TP106 TP-107
Contextual Info: MOTOROLA Order this document by TIP100/D SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Com plem entary Silicon Transistors NPN T P100 . . . designed for general-purpose amplifier and low -speed switching applications. • • • • • T P101* High DC Current Gain —

T1P110

Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
Contextual Info: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER

TIPI02

Abstract: tip1 33T4 DDD1172 TIP100 TIP105
Contextual Info: HL TIPI 00, TIPI 01, T IP I02 TIPI 05, T IP I06, T IP I07 TIP100,101,102 TIP105, 106, 107 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications 0IM A B C D E F H J K L M N MIN MAX 16.51 10,67 4.83

Contextual Info: Xcelite Table of Contents Xcelite®, founded in 1921, produces high quality tools for professional use. They are known throughout the electronics industry for a comprehensive line of screwdrivers, nutdrivers, convertible nutdriver/ screwdriver sets, interchangeable blade drivers, service tools and kits, pliers and cutters, shears, snips, wire strippers and

transistor tip 35c

Abstract: photo transistor terminal transistor TIP 350 TIP 122 transistor APPLICATION circuit transistor TIP 662 transistor TIP 320 PCB PHOTO SENSOR TIP 122 transistor TIP 29 transistor AHF21
Contextual Info: AHF2 SMALL, HIGHLY RELIABLE TIP SENSOR CONTAINING A PHOTO SENSOR TIP AHF2 SWITCHES FEATURES TYPICAL APPLICATIONS • Realizes miniaturization of equipment and spaces saving. Size of body: 9.5x9.5×9.3 mm .374×.374×.366 inch • The contact type is equivalent to normally closed contacts, which satisfies the PL

TIP 40c transistor

Abstract: transistor tip 35c transistor TIP 662 transistor TIP 350 TIP 122 transistor APPLICATION circuit photo transistor terminal transistor equivalent of tip 50 transistor tip 360 tip 145 transistor
Contextual Info: AHF2 SMALL, HIGHLY RELIABLE TIP SENSOR CONTAINING A PHOTO SENSOR TIP AHF2 SWITCHES FEATURES TYPICAL APPLICATIONS • Realizes miniaturization of equipment and spaces saving. Size of body: 9.5x9.5×9.3 mm .374×.374×.366 inch • The contact type is equivalent to normally closed contacts, which satisfies the PL