TIP1 Search Results

T1P121

Abstract: texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122
Contextual Info: TYPES TIP120, TIP121. TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR COM PLEM EN TARY USE WITH TIP125, TIP126, TIP127 65 W at 25°C Case Temperature • Min hpE ° f 1000 at 3 V , 3 A • 5 A Rated Collector Current • 50 mJ Reverse Energy Rating

T1P102

Contextual Info: bH TEXAS I N S T R -COPTO} Ï Ë J Ö lbl7ab 896-1726 TEXAS INSTR OPTO 0D3bö7D □ 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS _ J A N U A R Y 1 9 7 7 - RE V ISE D OCTO BER 1 9 84 • Designed for Complementary Use with TIP105, TIP106, TIP107

MJE224

Abstract: tip111g TIP11X
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • •

Contextual Info: TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP105, TIP106 and TIP107 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)

TIP130

Abstract: TIP131 TIP132 TIP135 TIP136 TIP137 IC free
Contextual Info: TIP135, TIP136, TIP137 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP130, TIP131 and TIP132 TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current B 1 ● Minimum hFE of 1000 at 4 V, 4 A

TIP100

Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)

P112

Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are

TIP127G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. Lead-free: TIP127L Halogen-free: TIP127G

TIP122

Abstract: 890 f 562 ic
Contextual Info: DC COMPONENTS CO., LTD. TIP122 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base

TIP NPN

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 tip 115
Contextual Info: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L U N MIN MAX 16.51

MJP122

Abstract: TO-251 Outline TIP122
Contextual Info: MJP122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: TO-251 * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Value

TIP122-A

Abstract: TIP127A morocco tip122 TIP122 TIP122 ST TIP127 hFE-250
Contextual Info: TIP122-A TIP127-A Complementary power Darlington transistors Features • The devices are qualified for automotive application ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Application ■ 3 1 General purpose linear and switching

MJD122

Abstract: TIP122
Contextual Info: MJD122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: 1 2 3 D-PAK(TO-252) * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating

TIP168

Contextual Info: TIP168A PNP Epitaxial Silicon Transistor Semiconductor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 18A • Collector dissipation Pc =100W Tc = 25 t (ABSOLUTE MAXIMUM RATINGS (Ta = 25 X) i Symbol Rating Unit Collector-Base Voltage VcBO

TIP125

Abstract: TIP127 TIP126
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP125/126/127 DESCRIPTION •With TO-220C package ·DARLNGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP120/121/122 APPLICATIONS ·Designed for general–purpose amplifier

TIP147F

Abstract: TIP146F TIP145F
Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS

TIP152

Abstract: TIP150 TIP151 IC350
Contextual Info: SavantIC Semiconductor Product Specification TIP150/151/152 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON APPLICATIONS ·For use in automotive ignition,switching and motor control applications PINNING PIN DESCRIPTION 1 Base

tip140

Abstract: darlington TIP142 power amplifier TIP141 TIP142 npn DARLINGTON 10A TIP-142 tip142 darlington NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP140/141/142 DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP145/146/147 APPLICATIONS ·Designed for general–purpose amplifier and

TIP135

Abstract: TIP137 TIP136 tip137 equivalent Darlington 6A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP135/136/137 DESCRIPTION •With TO-220C package ·DARLINGTON ·Collector saturation voltage ·Complement to type TIP130/131/132 APPLICATIONS ·Designed for general-purpose amplifier

Contextual Info: KSH127 KSH127 D-PACK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ - I “ Suffix) Electrically Similar to Popular TIP127

Contextual Info: MJD117 MJD117 D-PACK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ - I “ Suffix) Electrically Similar to Popular TIP117

Tip100

Contextual Info: TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE=4v, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use

equivalent of TIP122

Abstract: TIP122
Contextual Info: TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter