TIN RFP Search Results

RFP-050100-2X50-2

Contextual Info: Model RFP-050100-2X50-2 Chip Termination 5 Watts, 50Ω General Specifications Resistive Element Substrate Terminal Finish Operating Temperature Thick film BeO Ceramic Matte Tin over Nickel -55 to +125°C see chart Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed

45N03L

Abstract: FP45N03L F45N03L RFP45N03L 014E3 f45n 03LSM
Contextual Info: CIS H A R R IS RFP45N03L, RF1S45N03L, RF1S45N03LSM 45A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Packages Features JEDEC TO-220AB • 4 5 A , 30V • r DS ON = 0.022SJ • Tem perature C o m p e n s a tin g PS PICE Model

RFP-375375N6X50-2

Abstract: SN63 SN96 375375N6X50-2
Contextual Info: 200 Watts, 50 Ω General Specifications Resistive Element: Substrate: Terminals: Thick film Aluminum nitride ceramic Tin/Lead, 90/10 over nickel Electrical Specifications Resistance Value: Frequency Range: Power: V.S.W.R.: Features • DC – 2.5 GHz • 200 Watts

RFP-250375N4Z50-2

Abstract: tin rfp
Contextual Info: 25 Watts, 50 Ω General Specifications Resistive Element: Substrate: Terminals: Thick film Aluminum nitride ceramic Tin/Lead, 90/10 over nickel Electrical Specifications Resistance Value: Frequency Range: Power: V.S.W.R.: Features • DC – 3.0 GHz • 25 Watts

RFP-250250N6Z50-2

Contextual Info: 16 Watts, 50 Ω General Specifications Resistive Element: Substrate: Terminals: Thick film Aluminum nitride ceramic Tin/Lead, 90/10 over nickel Electrical Specifications Resistance Value: Frequency Range: Power: V.S.W.R.: Features • DC – 3.0 GHz • 16 Watts

RFP-250250N6X50-2

Abstract: SN63 SN96
Contextual Info: 40 Watts, 50 Ω General Specifications Resistive Element: Substrate: Terminals: Thick film Aluminum nitride ceramic Tin/Lead, 90/10 over nickel Electrical Specifications Resistance Value: Frequency Range: Power: V.S.W.R.: Features • DC – 2.5 GHz • 40 Watts

rfp100

Abstract: RFP-100200N4X50-2 SN63 SN96
Contextual Info: 30 Watts, 50 Ω General Specifications Resistive Element: Substrate: Terminals: Thick film Aluminum nitride ceramic Tin/Lead, 90/10 over nickel Electrical Specifications Resistance Value: Frequency Range: Power: V.S.W.R.: Features • DC – 3.0 GHz • 30 Watts

RFP-250375N6X50-2

Abstract: SN63 SN96
Contextual Info: 150 Watts, 50 Ω General Specifications Resistive Element: Substrate: Terminals: Thick film Aluminum nitride ceramic Tin/Lead, 90/10 over nickel Electrical Specifications Resistance Value: Frequency Range: Power: V.S.W.R.: Features • DC – 2.0 GHz • 150 Watts

RFP-100200N4Z50-2

Contextual Info: 10 Watts, 50 Ω General Specifications Resistive Element: Substrate: Terminals: Thick film Aluminum nitride ceramic Tin/Lead, 90/10 over nickel Electrical Specifications Resistance Value: Frequency Range: Power: V.S.W.R.: Features • DC – 2.0 GHz • 10 Watts

RFP-375375N6Z50-2

Contextual Info: 30 Watts, 50 Ω General Specifications Resistive Element: Substrate: Terminals: Thick film Aluminum nitride ceramic Tin/Lead, 90/10 over nickel Electrical Specifications Resistance Value: Frequency Range: Power: V.S.W.R.: Features • DC – 2.0 GHz • 30 Watts

hmc506

Abstract: HMC676LC3C
Contextual Info: g ra tin s Ye ar 25 Ce leb ΠInn ov ce vi y lit Πion Qua at ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB CELLULAR INFRASTRUCTURE

D300

Contextual Info: r n REV PER EC 0S1 2-041 3-03 0.8 - 0.03 A A A CONTACT MATERIAL: PHOSPHOR-BRONZE. CONTACT FINISH: UNDERPLATE ENTIRE CONTACT 0.00127 MIN. NICKEL ON MATING SURFACESCONFORMS TO ALL TESTING SPECIFIED FOR TELCORDIA UNCONTROLLED ENVIRONMENT ON LEADS0.0006 MIN. TIN-LEAD, OVER UNDERPLATE

Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description ue 25 IM3 -38 tin 20 -43 15 -48 10 ACPR -53 34 36 38 40 42 44 t od Broadband internal matching d 30 Drain Efficiency % Efficiency Thermally-enhanced packages

10 GHz wideband mixer

Abstract: HMC676LP3E
Contextual Info: g ra tin Ye ar s 25 Ce leb  Inn ov ce vi y lit  ion Qua at Product Selection Guide Analog, Digital & Mixed -Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB

14N05

Abstract: FT4N05 F14N05
Contextual Info: f f ï H A ^ 8 E“ ' R R RFD14N05, RFD14N05SM, RFP14N05 I S 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO -220A B • 14A, 5 0 V • r DS ON = 0.10012 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M odel

HU520-G

Abstract: 30700-00
Contextual Info: ITEM DESCRIPTION 1 HOUSING 2 CONTACT 1 REMARK TREATMENT MATERIAL «' TY THERMOPLASTIC. MOLDED COLOR SEE DRAWING NO. UL94V-0 RATED 307-0000-297 50u” MIN. NICKEL UNDER SAMI' AS NO. OF POSITION. COPPER ALLOY SEE BELOW PLATING. lOOu” MIN. TIN/LEAD PLATING ON TAILS, CONTACT

Contextual Info: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description 25 IM3 -45 20 tin ACPR -50 15 -55 -60 30 32 34 36 38 40 42 t uc • Broadband internal matching • Typical two-carrier WCDMA performance at

AN7198Z equivalent

Abstract: AN7198Z AN7198 AN7199Z HZIP015-P-0745A
Contextual Info: ICs for Audio Common Use AN7198Z Dual 20 W BTL Power IC for Car Audio • Overview 18.00±0.30 4.00±0.20 13.50±0.30 M Di ain sc te on na tin nc ue e/ d 1.50±0.10 φ3.60±0.10 13.25±0.30 15 1.27 +0.20 0.50–0.10 15.65±0.50 10.0±0.30 2.40±0.50 1 18.95±0.50

48409

Abstract: rfp70n03
Contextual Info: RFP70N03 £ ü H A R R IS S E M I C O N D U C T O R March 1994 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET MegaFET Features • Package T 0 -2 2 0 A B 7 0 A .3 0 V TOP VIEW • *"d s <o n ) = 0 . 0 1 o n • U IS R a tin g C u rv e (S in g le P u lse )

HMC734

Abstract: AG602-89 HMC807LP6CE SPI op amp mar 4sm hmc849 HMC516 HMC332 hmc783lp6ce ERA-4SM EAR99
Contextual Info: g ra tin Ye ar s 25 Ce leb Œ Inn ov ce vi y lit Œ ion Qua at ῵ᢳ ⏋ড়ֵো䲚៤⬉䏃ˈ 䲚៤ 䏃 ῵ഫˈ ഫ ᄤ㋏㒳 Ҿ㸼 㒳 Ҿ㸼 DC - 110 GHZ ≑䔺⬉ᄤ Telematics & Sensors ᆑᏺ䗮ֵ Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB

bu245a

Abstract: 2n6895 BU245 RFM12P10 RFP12P10 2N6897 to205 rfm3n RFP8P08 rfp10p15
Contextual Info: THOnSON/ DISTRIBUTOR SflE D 0QD5704 41T TCSK P o w er M O S FE Ts RF and BUZ-Series Power MOSFETs — N-Channel continued P a cka g e M a x im u m R a tin g s BVq s s (V) Id s (A) r DS(O N) O HM S 400 4 7 12 4.5 5.5 3.0 2.6 11.5 1.50 0.75 0.38 1.50 1.00

Contextual Info: LINEAR INTEGRATED CIRCUIT KA9201 RF AMP FOR CDP 30 S O P The KA9201 w hich is the RF a m p lifie r is a m o n o lith ic integrated c irc u it designed fo r three-spot type o p tica l pick-up o f the com pact d is c player. It is c o n s is tin g o f RF signal processing c irc u it, Focus

10N100C

Contextual Info: J 2 H a r r i s R F G 3 0 P 0 5 R F P 3 0 P 0 5 P-Channel Enhancement Mode Power Field Effect Transistors MegaFETs A ugust 1991 Features Packages • -3 0 A , -5 0 V • rD S (o n ) = 0 - 0 6 5 n D R A IN (F L A N G E ) • U IS S O A R a tin g C u rv e (S in g le P u lse )

Contextual Info: 10 13 75705M O DULE T Y P E — T A IL P LA T IN G T Y P E • * * * * _ T ' -P IN L E N G T H IP 3 .9 0 U N G UIDED — T IN /L E A D = 0 4 .7 0 U N G UIDED — TIN O N LY = 1 -E N D W A L L O PTIO N S 0 = O PE N E N D S O F COLUMNS 1.78 — 5 .7 0 4 .7 0 & 5 .7 0