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    PTFA181001E Search Results

    PTFA181001E Datasheets (6)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTFA181001E
    Infineon Technologies 1800 MHz to 2000 MHz; Package: PG:H-36248-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 1,805.0 - 1,880.0 MHz; P1dB (typ): 100.0 W; Supply Voltage: 28.0 V Original PDF 404.68KB 11
    PTFA181001EV4
    Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 100W H-36248-2 Original PDF 11
    PTFA181001EV4R250
    Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 100W H-36248-2 Original PDF 11
    PTFA181001EV4R250XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 100W H-36248-2 Original PDF 403.05KB
    PTFA181001E V4 T500
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS Original PDF 403.05KB
    PTFA181001EV4XWSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 100W H-36248-2 Original PDF 403.05KB

    PTFA181001E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description ue 25 IM3 -38 tin 20 -43 15 -48 10 ACPR -53 34 36 38 40 42 44 t od Broadband internal matching d 30 Drain Efficiency % Efficiency Thermally-enhanced packages


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    ptfa181001eptfa181001fh-37248-2h-36248-2+1100-watt PDF

    d 1879 TRANSISTOR

    Abstract: ptfa181001e DATASHEET BCP56 LM7805 PTFA181001E PTFA181001F
    Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and


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    ptfa181001eptfa181001f100-watt18stances+4d 1879 transistorptfa181001e datasheetbcp56lm7805 PDF

    d 1879 TRANSISTOR

    Abstract: elna 50v LM7805 05 BCP56 LM7805 PTFA181001E PTFA181001F LM7805 voltage regulator packages 1844 MAGNETICS
    Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and


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    ptfa181001eptfa181001f100-watth-36248-2+8h-37248-2d 1879 transistorelna 50vlm7805 05bcp56lm7805lm7805 voltage regulator packages1844 magnetics PDF

    Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and


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    ptfa181001eptfa181001f100-watth-36248-2+1h-37248-2 PDF

    Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the DCS band. Full gold metallization ensures


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    ptfa181001eptfa181001f100-watth-30248-2+2h-31248-21880dangerous PDF

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


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    ptfa041501eptfa041501fptfa070601epg-dso-20-63+13pg-son-10h-33265-8h-34265-8h-36248-2h-37248-2h-36260-2ptfa142401elptfa070601fptfa071701eptfa071701fptfa072401elptfa072401flptfa080551e PDF

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


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    ptfa041501eptfa041501fptfa070601e725-7452fl+13pg-dso-20-63pg-son-10h-33265-8h-34265-8h-36248-2h-37248-2ptfa220121mptfb241402fptfa070601fptfa071701eptfa071701fptfa072401elptfa072401fl PDF

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


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    ptfa041501eptfa041501fpg-dso-20-63pg-rfp-10+15h-33265-8h-34265-8h-30260-2h-36260-2h-30265-2h-30248-2ptfb182503flptfa08150rf power transistorsptfa081501eptfa092213elptfbptfa211801eptfb182503ptfb192503 PDF