PTFA181001E Search Results
PTFA181001E Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PTFA181001E | Infineon Technologies | 1800 MHz to 2000 MHz; Package: PG:H-36248-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 1,805.0 - 1,880.0 MHz; P1dB (typ): 100.0 W; Supply Voltage: 28.0 V | Original | 404.68KB | 11 | ||
| PTFA181001EV4 | Infineon Technologies | RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 100W H-36248-2 | Original | 11 | |||
| PTFA181001EV4R250 | Infineon Technologies | RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 100W H-36248-2 | Original | 11 | |||
| PTFA181001EV4R250XTMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 100W H-36248-2 | Original | 403.05KB | |||
| PTFA181001E V4 T500 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS | Original | 403.05KB | |||
| PTFA181001EV4XWSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 100W H-36248-2 | Original | 403.05KB |
PTFA181001E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description ue 25 IM3 -38 tin 20 -43 15 -48 10 ACPR -53 34 36 38 40 42 44 t od Broadband internal matching d 30 Drain Efficiency % Efficiency Thermally-enhanced packages |
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ptfa181001eptfa181001fh-37248-2h-36248-2+1 | |
d 1879 TRANSISTOR
Abstract: ptfa181001e DATASHEET BCP56 LM7805 PTFA181001E PTFA181001F
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ptfa181001eptfa181001f100-watt18stances+4 | |
d 1879 TRANSISTOR
Abstract: elna 50v LM7805 05 BCP56 LM7805 PTFA181001E PTFA181001F LM7805 voltage regulator packages 1844 MAGNETICS
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ptfa181001eptfa181001f100-watth-36248-2+8 | |
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Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and |
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ptfa181001eptfa181001f100-watth-36248-2+1 | |
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Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the DCS band. Full gold metallization ensures |
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ptfa181001eptfa181001f100-watth-30248-2+2 | |
PTFA142401EL
Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
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ptfa041501eptfa041501fptfa070601epg-dso-20-63+13 | |
PTFA041501E
Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
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ptfa041501eptfa041501fptfa070601e725-7452fl+13 | |
PTFB182503FL
Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
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ptfa041501eptfa041501fpg-dso-20-63pg-rfp-10+15 |