PTFA181001F Search Results

PTFA181001F Datasheets (5)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTFA181001F		Infineon Technologies	1800 MHz to 2000 MHz; Package: PG:H-37248-2; Flange Type: Earless; Matching: I/O; Frequency Band: 1,805.0 - 1,880.0 MHz; P_1dB (typ): 100.0 W; Supply Voltage: 28.0 V	Original	PDF	404.68KB	11
PTFA181001FV4		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 100W H-37248-2	Original	PDF		11
PTFA181001FV4R250		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 100W H-37248-2	Original	PDF		11
PTFA181001FV4R250FTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 100W H-37248-2	Original	PDF	403.05KB
PTFA181001FV4XWSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 100W H-37248-2	Original	PDF	403.05KB

PTFA181001F Price and Stock

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Infineon Technologies AG


Infineon Technologies AG PTFA181001FV4R250FTMA1 RF MOSFET LDMOS 28V H-37248-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTFA181001FV4R250FTMA1	Tape & Reel			250	1 - 10 - 100 - 1000 $73.91 10000 $73.91	Buy Now

PTFA181001F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description ue 25 IM3 -38 tin 20 -43 15 -48 10 ACPR -53 34 36 38 40 42 44 t od Broadband internal matching d 30 Drain Efficiency % Efficiency Thermally-enhanced packages	Original	PTFA181001E PTFA181001F H-37248-2 H-36248-2 PTFA181001E PTFA181001F 100-watt	PDF
d 1879 TRANSISTOR Abstract: ptfa181001e DATASHEET BCP56 LM7805 PTFA181001E PTFA181001F Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and	Original	PTFA181001E PTFA181001F PTFA181001E PTFA181001F 100-watt 18stances. d 1879 TRANSISTOR ptfa181001e DATASHEET BCP56 LM7805	PDF
d 1879 TRANSISTOR Abstract: elna 50v LM7805 05 BCP56 LM7805 PTFA181001E PTFA181001F LM7805 voltage regulator packages 1844 MAGNETICS Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and	Original	PTFA181001E PTFA181001F PTFA181001E PTFA181001F 100-watt H-36248-2 H-37248-2 d 1879 TRANSISTOR elna 50v LM7805 05 BCP56 LM7805 LM7805 voltage regulator packages 1844 MAGNETICS	PDF
Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and	Original	PTFA181001E PTFA181001F PTFA181001E PTFA181001F 100-watt H-36248-2 H-37248-2	PDF
Contextual Info: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the DCS band. Full gold metallization ensures	Original	PTFA181001E PTFA181001F 100-watt, H-30248-2 H-31248-2 1880dangerous	PDF
PTFA142401EL Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly	Original	PTFA041501E PTFA041501F PTFA070601E PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 H-36260-2 PTFA142401EL PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E	PDF
PTFA041501E Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly	Original	PTFA041501E PTFA041501F PTFA070601E 725-7452FL PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 PTFA041501E PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL	PDF
PTFB182503FL Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production	Original	PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503	PDF