THINQ Search Results

IEC60721-3-3

Abstract: L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology
Contextual Info: IDC08S120E 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

Storage of Products Supplied by Infineon Technologies

Abstract: IEC60721-3-3 IEC60721 L4926E
Contextual Info: IDC73D120T6H 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

REG710

Abstract: REG710-5 REG71050 REG71055 REG71055DDC REG71055DDCT REG710EVM-33 REG710EVM-5 TSOT23-6 MARKING CFf
Contextual Info: REG710 www.ti.com. SBAS221G – DECEMBER 2001 – REVISED JANUARY 2009 60mA, 5.0V, Buck/Boost Charge Pump in ThinSOT-23 and ThinQFN

IEC60721-3-3

Abstract: Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60
Contextual Info: IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching

d05s60c

Abstract: IDT05S60C JESD22
Contextual Info: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior

Contextual Info: IDH05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 6 nC • Temperature independent switching behavior IF; TC< 130 °C

smd diode marking f4

Abstract: idd04
Contextual Info: IDD04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior

D04G60C

Contextual Info: IDH04SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 4.5 nC • Temperature independent switching behavior IF; TC< 130 °C

D06S60C

Abstract: IDV06S60C Schottky diode TO220 JESD22 d06s60
Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description

D06S60

Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
Contextual Info: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery

D02G120

Abstract: IDH02SG120 JESD22 J1028
Contextual Info: IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery V DC 1200 600 V QC 3.2 7.2 nC 3 2 A I F; T C< 130 °C

IDB10S60C

Abstract: PG-TO220-3-45 D10S60C JESD22
Contextual Info: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

SMD diode f9

Abstract: D09G60C IDD09SG60C JESD22 SMD F9
Contextual Info: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior

d02s60c

Abstract: idv02s60c d02s60 JESD22 d02s6
Contextual Info: IDV02S60C 2nd Generation thinQ!TM SiC Schottky Diode Fully isolated package with similar Rth,jc as the standard T0220 by using proprietary die attach processing Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark

D10S60C

Abstract: IDH10S60C JESD22
Contextual Info: IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

D16S60C

Abstract: Schottky diode d16s60c IDT16S60C JESD22
Contextual Info: IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

IDH09SG60C

Abstract: JESD22 D09G60C
Contextual Info: IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior

D05S120

Abstract: idh05s120 JESD22
Contextual Info: IDH05S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior V DC 1200

D20S30

Abstract: SDB20S30 Q67040-S4374 SDP20S30 300V Schottky Diode smd
Contextual Info: SDB20S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 IF

D08S60C

Abstract: IDH08S60C JESD22
Contextual Info: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior

D10G60C

Abstract: IDH10SG60C D10G60 JESD22
Contextual Info: IDH10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior

d06s60

Abstract: T-1228 to220 pcb footprint SDB06S60 SDP06S60 SDT06S60
Contextual Info: SDP06S60, SDB06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery

TO220 package infineon

Abstract: IDV03S60C IDV06S60C idv02s60c
Contextual Info: Product Brief SiC Schottky Diodes thinQ! Second Generation now available in TO-220 FullPAK High efficiency and thermal performance combine in a full isolated solution The new FullPAK solution combines the high electrical performance standards of Infineon second generation SiC Schottky diodes and the advantages of a full

d02s60

Abstract: d02s60c PG-TO220-2-2 SDT02S60
Contextual Info: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide